ZXMS6006SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET ADVANCE INFORMATION Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • • On-State Resistance Nominal Load Current (VIN = 5V) 100mΩ 2.8A • Low Input Current • Logic Level Input (3.3V and 5V) • Clamping Energy • Short Circuit Protection with Auto Restart • Over Voltage Protection (active clamp) Description and Applications • Thermal Shutdown with Auto Restart • Over-Current Protection The ZXMS6006SGQ is a self protected low side MOSFET with logic • Input Protection (ESD) level input. It integrates over-temperature, over-current, over-voltage • High Continuous Current Rating (active clamp) and ESD protected logic level functionality. The • Lead-Free Finish; RoHS compliant (Notes 1 & 2) ZXMS6006SGQ is ideal as a general purpose switch driven from • Halogen and Antimony Free. “Green” Device (Note 3) 3.3V or 5V microcontrollers in harsh environments where standard • Qualified to AEC-Q101 Standards for High Reliability MOSFETs are not rugged enough. • PPAP Capable • Lamp Driver • Motor Driver • Relay Driver • Solenoid Driver 480mJ Mechanical Data • • Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish • Weight: 0.112 grams (approximate) D SOT223 IN S Top View Device Symbol Top View Pin Out Ordering Information (Note 4) Product ZXMS6006SGQTA Notes: Marking ZXMS6006S Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information ZXMS 6006S ZXMS6006S = Product type Marking Code IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SGQ Document number: DS35141 Rev. 2 - 2 1 of 8 www.diodes.com June 2014 © Diodes Incorporated ZXMS6006SGQ ADVANCE INFORMATION Functional Block Diagram Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units VDS 60 V VDS(SC) 16 V Continuous Input Voltage VIN -0.5 to +6.0 V Continuous Input Current @-0.2V ≤ VIN ≤ 6V Continuous Input Current @VIN < -0.2V or VIN > 6V IIN No Limit │IIN │≤2 mA Pulsed Drain Current @VIN = 3.3V IDM 11 A Pulsed Drain Current @VIN = 5V IDM 13 A A Continuous Drain-Source Voltage Drain-Source Voltage for Short Circuit Protection Continuous Source Current (Body Diode) (Note 5) IS 2 Pulsed Source Current (Body Diode) ISM 12 A Unclamped Single Pulse Inductive Energy, TJ = +25°C, ID = 0.5A, VDD = 24V EAS 480 mJ Electrostatic Discharge (Human Body Model) VESD 4000 V Charged Device Model VCDM 1000 V Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Value Units Power Dissipation at TA = +25°C (Note 5) Linear Derating Factor Characteristic PD 1.0 8.0 W mW/°C Power Dissipation at TA = +25°C (Note 6) Linear Derating Factor PD 1.6 12.8 W mW/°C Thermal Resistance, Junction to Ambient (Note 5) RθJA 125 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 83 °C/W RθJC 39 °C/W TJ -40 to +150 °C TSTG -55 to +150 °C Thermal Resistance, Junction to Case (Note 7) Operating Temperature Range Storage Temperature Range Notes: 5. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 6. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 7. Thermal resistance between junction and the mounting surfaces of drain and source pins. IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SGQ Document number: DS35141 Rev. 2 - 2 2 of 8 www.diodes.com June 2014 © Diodes Incorporated ZXMS6006SGQ The ZXMS6006SGQ is optimized for use with µC operating from 3.3V and 5V supplies. Characteristic Symbol Min Max Unit VIN 0 5.5 V Ambient Temperature Range TA -40 +125 °C High Level Input Voltage for MOSFET to be on VIH 3 5.5 V Low Level Input Voltage for MOSFET to be off VIL 0 0.7 V Peripheral Supply Voltage (voltage to which load is referred) VP 0 16 V Input Voltage Range Max Power Dissipation (W) ID Drain Current (A) Thermal Characteristics Limited by Over-Current Protection Limited 10 by RDS(on) 1ms 1 DC 1s 100ms 100m Single Pulse 10ms Tamb=25°C 10m 15X15X1.6 mm Single 1oz FR4 Limit of s/c protection 1 10 1.6 1.4 50X50X1.6 mm Single 2oz FR4 1.2 1.0 0.8 0.6 0.4 15X15X1.6 mm Single 1oz FR4 0.2 0.0 0 25 VDS Drain-Source Voltage (V) 120 Maximum Power (W) 80 D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 0 100µ D=0.1 1m 10m 100m 1 10 100 75 100 125 150 Derating Curve 15X15X1.6 mm Single 1oz FR4 T amb=25°C 100 50 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION Recommended Operating Conditions 1k 100 15X15X1.6 mm Single 1oz FR4 Single Pulse T amb=25°C 10 1 100µ Pulse Width (s) 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SGQ Document number: DS35141 Rev. 2 - 2 3 of 8 www.diodes.com June 2014 © Diodes Incorporated ZXMS6006SGQ ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Static Characteristics Symbol Min Typ Max Unit Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V — — 1 Off State Drain Current IDSS Input Threshold Voltage VIN(th) Input Current IIN Input Current While Over Temperature Active — Static Drain-Source On-State Resistance RDS(on) Continuous Drain Current (Note 5) ID Continuous Drain Current (Note 6) Current Limit (Note 8) — — 2 0.7 1 1.5 — 60 100 — 120 400 — — 300 — 85 125 — 75 100 2.0 — — 2.2 — — 2.6 — — 2.8 — — 4 8 — 6 13 — td(on) — 8.6 — tr — 18 — td(off) — 34 — ff — 15 — TJT 150 175 — 10 — ID(LIM) µA V µA µA mΩ Test Condition ID = 10mA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 1A VIN = +5V, ID = 1A VIN = 3V; TA = +25°C A VIN = 5V; TA = +25°C VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C A VIN = +3V VIN = +5V Dynamic Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time µs VDD = 12V, ID = 1A, VGS = 5V Over-Temperature Protection Thermal Overload Trip Temperature (Note 9) Thermal Hysteresis (Note 9) Notes: ff — °C — °C — 8. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods.. IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SGQ Document number: DS35141 Rev. 2 - 2 4 of 8 www.diodes.com June 2014 © Diodes Incorporated ZXMS6006SGQ VIN 14 120 8 5V 4.5V 4V 3.5V 3V3V 6 2.5V 12 10 4 2V 2 0 T A = 25°C 0 1 2 3 4 5 6 7 8 IIN Input Current (μA) ID Drain Current (A) 16 80 60 40 20 0 0 1 2 3 4 5 VIN Input Voltage (V) Input Current vs Input Voltage Typical Output Characteristic 1.4 0.20 ID = 1A 0.15 T J = 150°C 0.10 0.05 TJ = 25°C 0.00 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTH Threshold Voltage (V) RDS(on) On-Resistance (Ω) 100 9 10 11 12 VDS Drain-Source Voltage (V) 1.1 1.0 0.9 0.8 0.7 IS Source Curent (A) 10 VIN = 3V 0.10 0.00 VIN = 5V -50 -25 0 25 50 75 -50 -25 0 25 50 75 100 125 150 Threshold Voltage vs Temperature 0.20 0.05 ID = 1mA 1.2 TJ Junction Temperature (°C) On-Resistance vs Input Voltage 0.15 VIN = VDS 1.3 VIN Input Voltage (V) RDS(on) On-Resistance (Ω) ADVANCE INFORMATION Typical Characteristics 100 125 150 T J=150°C 1 TJ=25°C 0.1 0.01 TJ Junction Temperature (°C) On-Resistance vs Temperature 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Reverse Diode Characteristic IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SGQ Document number: DS35141 Rev. 2 - 2 5 of 8 www.diodes.com June 2014 © Diodes Incorporated ZXMS6006SGQ Drain-Source Voltage (V) Drain-Source Voltage (V) 12 ID=1A 10 VDS 8 6 VIN 4 2 0 -50 0 50 100 150 200 250 300 12 ID=1A VDS 10 8 6 4 VIN 2 0 -50 0 50 100 150 200 250 300 Time (μs) Time (μs) Switching Speed Switching Speed 10 VIN = 5V ID Drain Current (A) ADVANCE INFORMATION Typical Characteristics (cont.) VDS = 15V 8 RD = 0Ω 6 4 2 0 0 5 10 Time (ms) Typical Short Circuit Protection IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SGQ Document number: DS35141 Rev. 2 - 2 6 of 8 www.diodes.com June 2014 © Diodes Incorporated ZXMS6006SGQ Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm E1 Gauge Plane 0.25 Seating Plane e1 b -1 0° e A L A1 0° 7° 7° ADVANCE INFORMATION Package Outline Dimensions Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 Dimensions X1 X2 Y1 Y2 C1 C2 C1 Y2 X2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SGQ Document number: DS35141 Rev. 2 - 2 7 of 8 www.diodes.com June 2014 © Diodes Incorporated ZXMS6006SGQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SGQ Document number: DS35141 Rev. 2 - 2 8 of 8 www.diodes.com June 2014 © Diodes Incorporated