ZXMS6006DGQ ADVAN CE IN F O RM ATIO N Product Summary

 ZXMS6006DGQ
Green
ADVANCE INFORMATION
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary
Features and Benefits
•
Continuos Drain Source Voltage
60V
•
Compact High Power Dissipation Package
•
•
On-State Resistance
Nominal Load Current (VIN = 5V)
100mΩ
2.8A
•
Low Input Current
•
Logic Level Input (3.3V and 5V)
•
Clamping Energy
•
Short Circuit Protection with Auto Restart
•
Over Voltage Protection (active clamp)
Description and Applications
•
Thermal Shutdown with Auto Restart
•
Over-Current Protection
The ZXMS6006DGQ is a self protected low side MOSFET with logic
•
Input Protection (ESD)
level input. It integrates over-temperature, over-current, over-voltage
•
High Continuous Current Rating
(active clamp) and ESD protected logic level functionality. The
•
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
ZXMS6006DGQ is ideal as a general purpose switch driven from
•
Halogen and Antimony Free. “Green” Device (Note 3)
3.3V or 5V microcontrollers in harsh environments where standard
•
Qualified to AEC-Q101 Standards for High Reliability
MOSFETs are not rugged enough.
•
PPAP Capable
•
Lamp Driver
•
Motor Driver
•
Relay Driver
•
Solenoid Driver
490mJ
Mechanical Data
•
•
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound UL
Flammability Classification Rating 94V-0
SOT223
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Matte Tin Finish
•
Weight: 0.112 grams (approximate)
D
S
D
IN
D
IN
S
Top View
Pin Out
Device Symbol
Top View
Ordering Information (Note 3)
Product
ZXMS6006DGQTA
Notes:
Marking
ZXMS6006D
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
ZXMS
6006D
ZXMS6006D = Product type Marking Code
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
Document number: DS35142 Rev. 1 - 2
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ZXMS6006DGQ
ADVANCE INFORMATION
Functional Block Diagram
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
VDS
60
V
VDS(SC)
16
V
VIN
-0.5 to +6.0
V
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
IIN
No limit
│IIN │≤2
mA
Pulsed Drain Current @VIN = 3.3V
IDM
11
A
Pulsed Drain Current @VIN = 5V
IDM
13
A
IS
2
A
Pulsed Source Current (Body Diode)
ISM
12
A
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
EAS
490
mJ
Electrostatic Discharge (Human Body Model)
VESD
4000
V
Charged Device Model
VCDM
1000
V
Continuous Drain-Source Voltage
Drain-Source Voltage for Short Circuit Protection
Continuous Input Voltage
Continuous Source Current (Body Diode) (Note 4)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Units
Power Dissipation at TA = +25°C (Note 5)
Linear Derating Factor
Characteristic
PD
1.3
10.4
W
mW/°C
Power Dissipation at TA = +25°C (Note 6)
Linear Derating Factor
PD
3.0
24
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
96
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
42
°C/W
Thermal Resistance, Junction to Case (Note 7)
RθJC
12
°C/W
TJ
-40 to +150
°C
TSTG
-55 to +150
°C
Operating Temperature Range
Storage Temperature Range
Notes:
5. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions.
6. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
Document number: DS35142 Rev. 1 - 2
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ZXMS6006DGQ
The ZXMS6006DGQ is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic
Symbol
Min
Max
Input Voltage Range
VIN
0
5.5
V
Ambient Temperature Range
TA
-40
+125
°C
High Level Input Voltage for MOSFET to be on
VIH
3
5.5
V
Low level input voltage for MOSFET to be off
VIL
0
0.7
V
Peripheral Supply Voltage (voltage to which load is referred)
VP
0
16
V
Unit
Limited by Over-Current Protection
Limited
10 by RDS(on)
1
100m
10m
1ms
DC
1s
Single Pulse 100ms
T amb=25°C
10ms
15X15X1.6 mm
Single 1oz FR4
1
Limit of s/c protection
10
Max Power Dissipation (W)
ID Drain Current (A)
Thermal Characteristics
3.0
2.5
50X50X1.6 mm
Single 2oz FR4
2.0
1.5
1.0
0.5
0.0
15X15X1.6 mm
Single 1oz FR4
0
25
VDS Drain-Source Voltage (V)
75
100
125
150
Maximum Power (W)
Derating Curve
100
15X15X1.6 mm
90
Single 1oz FR4
80
T amb=25°C
70
60
D=0.5
50
40
30
D=0.2
Single Pulse
20
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1
10
100
1k
Pulse Width (s)
50
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
ADVANCE INFORMATION
Recommended Operating Conditions
15X15X1.6 mm
Single 1oz FR4
100
Single Pulse
T amb=25°C
10
1
100µ
Transient Thermal Impedance
1m
10m 100m
1
10
Pulse Width (s)
100
1k
Pulse Power Dissipation
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
Document number: DS35142 Rev. 1 - 2
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ZXMS6006DGQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
Min
Typ
Max
Unit
VDS(AZ)
60
65
70
V
—
—
1
—
—
2
0.7
1
1.5
Test Condition
Static Characteristics
Drain-Source Clamp Voltage
Off State Drain Current
IDSS
Input Threshold Voltage
VIN(th)
Input Current
Input Current While Over Temperature Active
Static Drain-Source On-State Resistance
IIN
60
100
120
200
V
μA
VDS = 12V, VIN = 0V
VDS = 36V, VIN = 0V
VDS = VGS, ID = 1mA
VIN = +3V
VIN = +5V
—
—
400
—
85
125
—
75
100
2.0
—
—
VIN = 3V; TA = 25°C
2.2
—
—
VIN = 5V; TA = 25°C
2.6
—
—
2.8
—
—
4
8
—
6
13
—
td(on)
—
8.6
—
tr
—
18
—
td(off)
—
34
—
ff
—
15
—
TJT
150
175
—
°C
—
ff
—
10
—
°C
—
RDS(on)
Continuous Drain Current (Note 5)
ID
Continuous Drain Current (Note 6)
Current Limit (Note 8)
—
—
µA
ID = 10mA
ID(LIM)
μA
mΩ
A
VIN = +5V
VIN = +3V, ID = 1A
VIN = +5V, ID = 1A
VIN = 3V; TA = 25°C
VIN = 5V; TA = 25°C
A
VIN = +3V
VIN = +5V
Dynamic Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
μs
VDD = 12V, ID = 1A, VGS = 5V
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 9)
Thermal Hysteresis (Note 9)
Notes:
8.The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods..
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
Document number: DS35142 Rev. 1 - 2
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ZXMS6006DGQ
VIN
14
120
8
5V
4.5V
4V
3.5V
3V3V
6
2.5V
12
10
4
2V
2
0
T A = 25°C
0
1
2
3
4
5
6
7
8
IIN Input Current (μA)
ID Drain Current (A)
16
100
80
60
40
20
0
9 10 11 12
1
2
3
4
5
Input Current vs Input Voltage
Typical Output Characteristic
1.4
0.20
ID = 1A
0.15
T J = 150°C
0.10
0.05
T J = 25°C
0.00
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VTH Threshold Voltage (V)
RDS(on) On-Resistance (Ω)
0
VIN Input Voltage (V)
VDS Drain-Source Voltage (V)
1.1
1.0
0.9
0.8
0.7
IS Source Curent (A)
10
VIN = 3V
0.10
0.00
VIN = 5V
-50
-25
0
25
50
75
-50
-25
0
25
50
75
100 125 150
Threshold Voltage vs Temperature
0.20
0.05
ID = 1mA
1.2
TJ Junction Temperature (°C)
On-Resistance vs Input Voltage
0.15
VIN = VDS
1.3
VIN Input Voltage (V)
RDS(on) On-Resistance (Ω)
ADVANCE INFORMATION
Typical Characteristics
100 125 150
T J=150°C
1
T J=25°C
0.1
0.01
TJ Junction Temperature (°C)
On-Resistance vs Temperature
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Reverse Diode Characteristic
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
Document number: DS35142 Rev. 1 - 2
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Drain-Source Voltage (V)
Drain-Source Voltage (V)
12
10
ID=1A
VDS
8
6
VIN
4
2
0
-50
0
50
100
150
200
250
300
12
ID=1A
VDS
10
8
6
4
VIN
2
0
-50
0
50
100
150
200
250
300
Time (μs)
Time (μs)
Switching Speed
Switching Speed
18
ID Drain Current (A)
ADVANCE INFORMATION
Typical Characteristics (cont.)
16
VIN = 5V
14
VDS = 16V
RD = 0Ω
12
10
8
6
4
2
0
0
5
10
15
Time (ms)
Typical Short Circuit Protection
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
Document number: DS35142 Rev. 1 - 2
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ZXMS6006DGQ
Package Outline Dimensions
D
Q
b1
C
E
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
E1
Gauge
Plane
0.25
Seating
Plane
e1
b
-1
0°
e
A
L
A1
0°
7°
7°
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions
X1
X2
Y1
Y2
C1
C2
C1
Y2
X2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
C2
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
Document number: DS35142 Rev. 1 - 2
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ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
Document number: DS35142 Rev. 1 - 2
8 of 8
www.diodes.com
June 2014
© Diodes Incorporated