DSS3515M

DSS3515M
15V PNP LOW VCE(sat) TRANSISTOR
Features
Mechanical Data





BVCEO > -15V
IC = -500mA High Collector Current
ICM = -1A Peak Pulse Current
PD = 1000mW Power Dissipation
Low Collector-Emitter Saturation Voltage, VCE(sat)



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
0.60mm2 Package Footprint, 13 times Smaller than SOT23
0.5mm Height Package Minimizing Off-Board Profile
Complementary NPN Type DSS2515M
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability


X1-DFN1006-3

Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish  NiPdAu.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.0009 grams (Approximate)
C
B
B
C
E
E
Bottom View
Top View
Device Schematic
Device Symbol
Ordering Information (Note 4)
Product
DSS3515M-7
DSS3515M-7B
Notes:
Compliance
AEC-Q101
AEC-Q101
Marking
TB
TB
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
From date code 1527 (YYWW),
this changes to:
Top View
Dot Denotes Collector Side
TB
TB
TB
TB
TB
Top View
Bar Denotes Base and Emitter Side
TB
DSS3515M-7
TB
TB
DSS3515M
Document number: DS31819 Rev. 4 - 2
TB = Product Type Marking Code
TB
TB
TB
DSS3515M-7B
Top View
Bar Denotes Base and Emitter Side
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DSS3515M
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Value
-15
-15
-6
-500
-1
-100
Unit
V
V
V
mA
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage and Temperature Range
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
PD
RJA
Value
400
1000
310
120
Unit
mW
C/W
RJL
120
°C/W
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS3515M
Document number: DS31819 Rev. 4 - 2
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DSS3515M
Thermal Characteristics
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * R JA
D = Single Pulse
RJA = 310°C/W
Duty Cycle, D = t1/ t2
0.001
0.000001
0.0001
0.01
1
t1, PULSE DURATION TIME (sec)
Fig. 1 Transient Thermal Resistance
100
10,000
P (PK), PEAK TRANSI ENT POI WER (W)
1,000
Single Pulse
RJA = 310°C/W
100
RJA(t) = r(t) * RJA
TJ - TA = P * RJA(t)
10
1
0.1
1E-06
0.0001
0.01
1
100
10,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
DSS3515M
Document number: DS31819 Rev. 4 - 2
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DSS3515M
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVCBO
BVCEO
BVEBO
-15
-15
-6



Collector Cutoff Current
ICBO


Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
IEBO





-100
-50
-100
V
V
V
nA
µA
nA
DC Current Gain
hFE
200
150
90













-25
-150
-250
mV
500
-1.1
-0.9
mΩ
V
V
VCE = -2V, IC = -10mA
VCE = -2V, IC = -100mA
VCE = -2V, IC = -500mA
IC = -10mA, IB = -0.5mA
IC = -200mA, IB = -10mA
IC = -500mA, IB = -50mA
IC = -500mA, IB = -50mA
IC = -500mA, IB = -50mA
VCE = -2V, IC = -100mA

340
10

pF
MHz
VCB = -10V, f = 1.0MHz
VCE = -5V, IC = -100mA, f = 100MHz
Collector-Emitter Saturation Voltage
VCE(sat)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
RCE(sat)
VBE(sat)
VBE(on)






Cobo
fT

100
Note:
Test Condition
IC = -100µA, IE = 0
IC = -10mA, IB = 0
IE = -100µA, IC = 0
VCB = -15V, IE = 0
VCB = -15V, IE = 0, TA = +150°C
VEB = -5V, IC = 0
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
DSS3515M
Document number: DS31819 Rev. 4 - 2
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DSS3515M
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1.00
800
0.80
hFE, DC CURRENT GAIN
-IC, COLLECTOR CURRENT (A)
700
TA = 150°C
IB = -5mA
IB = -4mA
0.60
IB = -3mA
IB = -2mA
0.40
IB = -1mA
0.20
600
TA = 125°C
500
TA = 85°C
400
T A = 25°C
300
200
TA = -55°C
100
1
-V CE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
0.1
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
T A = -55°C
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
0.01
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1.0
0.9
IC/IB = 10
0.8
TA = -55°C
0.6
TA = 25°C
TA = 85°C
0.4
TA = 125°C
TA = 150°C
0.2
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
TA = -55°C
T A = 25°C
0.4
TA = 85°C
0.3
0.2
1.0
100
0.6
0.5
1
VCE = -2V
0.8
0.7
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
0
TA = 125°C
T A = 150°C
-RCE(SAT), COLLECTOR-EMITTER
SATURATION RESISTANCE ( )
0
10
1
TA = -55°C
TA = 85°C
0.1
0
0.1
TA = 150°C
TA = 25°C
TA = 125°C
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DSS3515M
Document number: DS31819 Rev. 4 - 2
0.1
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Collector-Emitter Saturation Resistance
vs. Collector Current
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DSS3515M
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
X1-DFN1006-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0.00 0.05 0.03
b
0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e
0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
0.40
z
0.02 0.08 0.05
All Dimensions in mm
A1
Seating Plane
D
b
Pin #1 ID
e
E b2
z
L3
L2
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Y
Dimensions
C
G1
G2
X
X1
Y
Y1
Y1
G2
X
Value (in mm)
0.70
0.30
0.20
0.40
1.10
0.25
0.70
G1
X1
DSS3515M
Document number: DS31819 Rev. 4 - 2
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DSS3515M
Document number: DS31819 Rev. 4 - 2
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