ds31297

BC847BLP4
45V NPN SMALL SIGNAL TRANSISTOR IN DFN1006
Features
Mechanical Data



BVCEO > 45V
IC = 100mA High Collector Current
PD = 1000mW Power Dissipation
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0.60mm2 Package Footprint, 13 times Smaller than SOT23
0.4mm Height Package Minimizing Off-Board Profile
Complementary NPN Type BC857BLP4
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability


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Case: X2-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish  NiPdAu.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.0008 grams (Approximate)
C
X2-DFN1006-3
B
B
C
E
E
Bottom View
Top View
Device Schematic
Device Symbol
Ordering Information (Note 4)
Product
BC847BLP4-7
BC847BLP4-7B
Notes:
Marking
F1
F1
Reel size (inches)
7
7
Tape width (mm)
8mm
8mm
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
From date code 1527 (YYWW),
this changes to:
Top View
Bar Denotes Base and Emitter Side
F1
F1
F1
F1
Top View
Dot Denotes Collector Side
F1
BC847BLP4-7
F1
F1
F1
F1
BC847BLP4
Document number: DS31297 Rev. 7 - 2
F1 = Product Type Marking Code
F1
F1
Top View
Bar Denotes Base and Emitter Side
F1
BC847BLP4-7B
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BC847BLP4
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
50
45
6.0
100
200
Unit
V
V
V
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
RJA
Value
400
1000
310
120
(Note 7)
RJL
120
°C/W
TJ, TSTG
-55 to +150
°C
PD
Operating and Storage and Temperature Range
Unit
mW
C/W
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Electrical Characteristics
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
(@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
DC Current Gain
Symbol
BVCBO
BVCEO
BVEBO
hFE
Min
50
45
6
200
Typ
—
—
—
350
80
200
Max
—
—
—
450
250
600
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
—
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
—
—
700
900
—
—
mV
Base-Emitter Voltage (Note 9)
VBE(on)
580
—
640
725
700
770
mV
Collector-Cutoff Current
ICBO
—
—
—
—
15
5.0
nA
µA
Gain Bandwidth Product
fT
100
—
—
MHz
CCBO
—
3.0
—
pF
Collector-Base Capacitance
Notes:
JEDEC Class
3A
B
Unit
V
V
V
—
mV
Test Condition
IC = 10µA, IB = 0
IC = 10mA, IB = 0
IE = 1µA, IC = 0
VCE = 5.0V, IC = 2.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
VCB = 30V
VCB = 30V, TA = +150°C
VCE = 5.0V, IC = 10mA,
f = 100MHz
VCB = 10V, f = 1.0MHz
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
BC847BLP4
Document number: DS31297 Rev. 7 - 2
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
600
100
80
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
IB = 0.5mA
IB = 0.4mA
IB = 0.3mA
60
IB = 0.2mA
40
IB = 0.1mA
400
200
20
0
0
1
2
3
4
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
5
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.3
IC/IB = 20
0.2
TA = 150ºC
TA = 85ºC
0.1
TA = 25ºC
TA = -55ºC
0
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V BE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
0
1,000
1.0
0.8
0.6
0.4
0.2
0
0.1
1.0
VBE(SAT), BASE-EMITTER
SATURATION VOLTAGE (V)
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain
vs. Collector Current
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.8
TA = -55°C
0.6
TA = 25°C
0.4
TA = 85°C
TA = 150°C
0.2
IC/IB = 20
0
0.1
1
10
IC, COLLECTOR CURRENT (mA)
100
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
BC847BLP4
Document number: DS31297 Rev. 7 - 2
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BC847BLP4
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
X2-DFN1006-3
Dim Min
Max Typ
A
0.40


A1
0
0.05 0.02
b1
0.10 0.20 0.15
b2
0.45 0.55 0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
0.35


L1
0.20 0.30 0.25
L2
0.20 0.30 0.25
L3
0.40


All Dimensions in mm
A1
D
b1
E
e
b2
L2
L3
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
X1
X
G2
G1
Y
Z
BC847BLP4
Document number: DS31297 Rev. 7 - 2
Dimensions
Z
G1
G2
X
X1
Y
C
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Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
May 2015
© Diodes Incorporated
BC847BLP4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
BC847BLP4
Document number: DS31297 Rev. 7 - 2
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© Diodes Incorporated
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