DSS2540M

DSS2540M
40V NPN LOW VCE(sat) TRANSISTOR
Features
Mechanical Data





BVCEO > 40V
IC = 500mA High Collector Current
ICM = 1A Peak Pulse Current
PD = 1000mW Power Dissipation
Low Collector-Emitter Saturation Voltage, VCE(sat)



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0.60mm2 Package Footprint, 13 times Smaller than SOT23
0.5mm Height Package Minimizing Off-Board Profile
Complementary NPN Type DSS3540M
Totally Lead Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish  NiPdAu.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.0009 grams (Approximate)



C
X1-DFN1006-3
B
B
C
E
E
Bottom View
Top View
Device Schematic
Device Symbol
Ordering Information (Note 4)
Product
DSS2540M-7
DSS2540M-7B
Notes:
Marking
TC
TC
Reel size (inches)
7
7
Tape width (mm)
8mm
8mm
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
From date code 1527
(YYWW), this
changes to:
Top View
Dot Denotes Collector Side
TC
TC
TC
TC
Top View
Bar Denotes Base and Emitter Side
TC
DSS2540M-7
TC
TC
TC
TC
DSS2540M
Document number: DS31820 Rev. 4 - 2
TC
TC
TC
DSS2540M-7B
TC = Product Type Marking Code
Top View
Bar Denotes Base and Emitter Side
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DSS2540M
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Value
40
40
6
500
1
100
Unit
V
V
V
mA
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage and Temperature Range
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
PD
RJA
Value
400
1000
310
120
Unit
mW
C/W
RJL
120
°C/W
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
B
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS2540M
Document number: DS31820 Rev. 4 - 2
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DSS2540M
Thermal Characteristics
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * R JA
D = Single Pulse
RJA = 310°C/W
Duty Cycle, D = t1/ t2
0.001
0.000001
0.0001
0.01
1
t1, PULSE DURATION TIME (sec)
Fig. 1 Transient Thermal Resistance
100
10,000
P (PK), PEAK TRANSI ENT POI WER (W)
1,000
Single Pulse
RJA = 310°C/W
100
RJA(t) = r(t) * RJA
TJ - TA = P * RJA(t)
10
1
0.1
1E-06
0.0001
0.01
1
100
10,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
DSS2540M
Document number: DS31820 Rev. 4 - 2
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DSS2540M
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVCBO
BVCEO
BVEBO
40
40
6



Collector Cutoff Current
ICBO


Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
IEBO





100
50
100
V
V
V
nA
µA
nA
DC Current Gain
hFE
200
150
50














50
100
200
250
mV
500
1.2
1.1
mΩ
V
V
VCE = 2V, IC = 10mA
VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
IC = 200mA, IB = 10mA
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA
VCE = 2V, IC = 100mA

300
6

pF
MHz
VCB = 10V, f = 1.0MHz
VCE = 5V, IC = 100mA, f = 100MHz
Collector-Emitter Saturation Voltage
VCE(sat)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
RCE(sat)
VBE(sat)
VBE(on)







Cobo
fT

250
Note:
Test Condition
IC = 100µA, IE = 0
IC = 10mA, IB = 0
IE = 100µA, IC = 0
VCB = 30V, IE = 0
VCB = 30V, IE = 0, TA = +150°C
VEB = 5V, IC = 0
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
DSS2540M
Document number: DS31820 Rev. 4 - 2
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DSS2540M
Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
1,000
1.00
900
IB = 5mA
800
TA = 150°C
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
0.80
IB = 4mA
IB = 3mA
0.60
IB = 2mA
0.40
IB = 1mA
700
TA = 125°C
600
TA = 85°C
500
TA = 25°C
400
300
TA = -55°C
200
0.20
100
0
0
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 20
0.1
TA = 150°C
TA = 125°C
T A = 85°C
TA = 25°C
TA = -55°C
0.01
0.1
0.9
TA = -55°C
T A = 25°C
0.4
T A = 85°C
0.3
0.2
0.8
TA = -55°C
0.6
TA = 25°C
TA = 85°C
0.4
TA = 125°C
TA = 150°C
0.2
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
0.6
0.5
IC/IB = 20
VCE = 2V
0.8
0.7
1.0
1,000
1.0
-RCE(SAT), COLLECTOR-EMITTER
SATURATION RESISTANCE ()
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
0
T A = 125°C
TA = 150°C
100
10
TA = -55°C
1
TA = 150°C
TA = 85°C
0.1
0
0.1
TA = 25°C
TA = 125°C
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DSS2540M
Document number: DS31820 Rev. 4 - 2
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0.1
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Collector-Emitter Saturation Resistance
vs. Collector Current
May 2015
© Diodes Incorporated
DSS2540M
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
X1-DFN1006-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0.00 0.05 0.03
b 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e
0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
0.40
z
0.02 0.08 0.05
All Dimensions in mm
A1
Seating Plane
D
b
Pin #1 ID
e
E b2
z
L3
L2
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Y
Dimensions
C
G1
G2
X
X1
Y
Y1
Y1
G2
X
G1
Value (in mm)
0.70
0.30
0.20
0.40
1.10
0.25
0.70
X1
DSS2540M
Document number: DS31820 Rev. 4 - 2
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DSS2540M
Document number: DS31820 Rev. 4 - 2
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