NVD6824NL D

NVD6824NL
Power MOSFET
100 V, 20 mW, 41 A, Single N−Channel
Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Note 1)
Power Dissipation RqJC
(Note 1)
Continuous Drain Current RqJA (Notes 1 & 2)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
TC = 25°C
Steady
State
Symbol
Value
Unit
VDSS
100
V
VGS
"20
V
ID
41
A
TC = 100°C
TC = 25°C
PD
TA = 25°C
Steady
State
ID
PD
3.9
1 2
DPAK
CASE 369C
STYLE 2
1.9
TA = 25°C
IDmaxpkg
60
A
TJ, Tstg
−55 to
175
°C
IS
41
A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V,
IL(pk) = 40 A, L = 0.1 mH, RG = 25 W)
EAS
80
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
RqJC
1.7
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
March, 2013 − Rev. 1
4
W
A
© Semiconductor Components Industries, LLC, 2013
N−Channel
A
8.5
238
Parameter
D
S
IDM
Source Current (Body Diode)
41 A
23 mW @ 4.5 V
W
90
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
100 V
6.0
TA = 100°C
Current Limited by
Package (Note 3)
ID
20 mW @ 10 V
45
TA = 100°C
TA = 25°C
RDS(on)
V(BR)DSS
G
29
TC = 100°C
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1
3
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
YWW
68
24LG
•
•
•
•
•
2
1 Drain 3
Gate Source
Y
WW
6824L
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NVD6824NLT4G
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NVD6824NL/D
NVD6824NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
92
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = 100 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
"100
nA
2.5
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
1.5
−6.5
gFS
mV/°C
VGS = 10 V, ID = 20 A
16.5
20
mW
VGS = 4.5 V, ID = 20 A
18.5
23
VDS = 15 V, ID = 20 A
18
S
3468
pF
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Threshold Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
187
VGS = 4.5 V, VDS = 80 V,
ID = 20 A
34
VGS = 10 V, VDS = 80 V,
ID = 20 A
66
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
133
nC
3.5
VGS = 10 V, VDS = 80 V,
ID = 20 A
9.0
18
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
15
VGS = 10 V, VDD = 80 V,
ID = 20 A, RG = 2.5 W
tf
55
31
42
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = 20 A
TJ = 25°C
0.84
TJ = 125°C
0.71
tRR
38
Charge Time
ta
28
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 20 A
QRR
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2
V
ns
10
59
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NVD6824NL
TYPICAL CHARACTERISTICS
VGS = 10 V
TJ = 25°C
ID, DRAIN CURRENT (A)
80
100
3.8 V
4.5 V
ID, DRAIN CURRENT (A)
100
3.6 V
60
3.4 V
40
3.2 V
3.0 V
20
80
VDS ≥ 10 V
60
TJ = 25°C
40
20
TJ = 125°C
2.8 V
0
1
2
3
4
TJ = −55°C
0
5
3.5
Figure 2. Transfer Characteristics
ID = 20 A
TJ = 25°C
0.020
0.018
0.016
2
4
6
8
10
4.0
0.030
TJ = 25°C
VGS = 4.5 V
0.025
0.020
VGS = 10 V
0.015
0.010
10
20
30
40
50
60
70
80
90
100
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100 k
2.8
VGS = 0 V
ID = 20 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (Normalized)
3.0
Figure 1. On−Region Characteristics
0.022
2.4
2.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.024
0.014
2.0
VDS, DRAIN−TO−SOURCE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
2.0
1.6
1.2
TJ = 150°C
10 k
TJ = 125°C
0.8
0.4
−50 −25
0
25
50
75
100
125
150
175
1k
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVD6824NL
TYPICAL CHARACTERISTICS
4000
VGS = 0 V
TJ = 25°C
Ciss
3000
2000
1000
Coss
0 Crss
0
10
20
30
40
50
60
70
90
80
6
Qgs
4
Qgd
VDS = 80 V
ID = 20 A
TJ = 25°C
2
0
0
10
20
30
40
50
60
70
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
IS, SOURCE CURRENT (A)
VDS = 80 V
ID = 20 A
VGS = 10 V
100
tr
tf
td(off)
td(on)
1
10
VGS = 0 V
TJ = 25°C
75
50
25
0
100
0.60
0.70
0.80
0.90
1.00
1.10
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
ID, DRAIN CURRENT (A)
t, TIME (ns)
QT
8
100
1000
10
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
5000
10
VGS = 10 V
Single Pulse
TC = 25°C
10 ms
100 ms
1 ms
10 ms
1
0.1
0.01
RDS(on) Limit
Thermal Limit
Package Limit
0.1
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NVD6824NL
TYPICAL CHARACTERISTICS
R(t) (°C/W)
10
1 Duty Cycle = 0.5
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 12. Thermal Response
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5
0.1
1
10
NVD6824NL
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NVD6824NL/D