NVD5890NL Product Preview Power MOSFET 40 V, 3.7 mW, 123 A, Single N−Channel DPAK http://onsemi.com Features • • • • • Low RDS(on) to Minimize Conduction Losses MSL 1 @ 260°C 100% Avalanche Tested AEC Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 3.7 mW @ 10 V 40 V D Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS "20 V ID 123 A Power Dissipation (RqJC) (Note 1) Continuous Drain Current (RqJA) (Notes 1, 2, 3) TC = 25°C TC = 85°C Steady State Pulsed Drain Current tp=10ms Current Limited by Package (Note 3) S 95 TC = 25°C PD 107 W TA = 25°C ID 24 A TA = 85°C Power Dissipation (RqJA) (Notes 1 & 2) PD 4.0 W TA = 25°C IDM 400 A TA = 25°C IDmaxPkg 100 A TJ, Tstg −55 to 175 °C IS 100 A EAS 240 mJ TL 260 °C Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VGS = 10 V, L = 0.3 mH, IL(pk) = 40 A, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4 1 2 18.5 TA = 25°C Operating Junction and Storage Temperature N−Channel G 3 CASE 369C DPAK (Bent Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 58 90LG Continuous Drain Current (RqJC) (Notes 1 & 3) 123 A 5.5 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and suty cycle. 2 1 Drain 3 Gate Source Y WW 5890L G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. P0 1 Publication Order Number: NVD5890NL/D NVD5890NL THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 1.4 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 37 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS V 40 Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "20 V VGS(TH) VGS = VDS, ID = 250 mA VGS = 0 V, VDS = 40 V TJ = 25°C mV/°C 1.0 TJ = 150°C mA 100 "100 nA 2.5 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 1.5 TBD mV/°C VGS = 10 V, ID = 50 A 2.9 3.7 mW VGS = 4.5 V, ID = 50 A 4.4 5.5 VDS = 15 V, ID = 15 A TBD S 4760 pF CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 580 VGS = 10 V, VDS = 15 V, ID = 50 A 74 nC TBD nC 385 Total Gate Charge QG(TOT) Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD TBD td(on) TBD VGS = 4.5 V, VDS = 15 V, ID = 50 A TBD TBD SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.0 W tf TBD TBD TBD 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NVD5890NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit V DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.9 1.2 VGS = 0 V, IS = 20 A TJ = 25°C 0.8 1.0 tRR ta tb TBD VGS = 0 V, dIs/dt = 100 A/ms, IS = 50 A QRR ns TBD TBD TBD nC ORDERING INFORMATION Order Number NVD5890NLT4G Package Shipping† DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NVD5890NL PACKAGE DIMENSIONS DPAK CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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