CPH6350 D

Ordering number : ENA1529B
CPH6350
P-Channel Power MOSFET
http://onsemi.com
–30V, –6A, 43mΩ, Single CPH6
Features
•
•
•
4V drive
Low ON-resistance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate to Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm)
--30
V
±20
V
--6
A
--24
A
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
7018A-003
5
4
Package
Shipping
memo
CPH6350-TL-E
CPH6
SC-74, SOT-26, SOT-457
3,000pcs./
reel
Pb-Free
CPH6350-TL-W
CPH6
SC-74, SOT-26, SOT-457
3,000pcs./
reel
Pb-Free
and
Halogen Free
0.9
2
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Marking
XC
1
Packing Type: TL
LOT No.
0.05
1.6
0.2
0.6
2.8
0.2
0.6
6
CPH6350-TL-E
CPH6350-TL-W
0.15
2.9
Device
TL
Electrical Connection
1, 2, 5, 6
CPH6
3
4
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM/71112 TKIM TC-00002780/80509PE TKIM TC-00002052 No. A1529-1/6
CPH6350
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
Ratings
min
typ
Unit
max
--30
V
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--3A
5.4
RDS(on)1
ID=--3A, VGS=--10V
33
43
mΩ
RDS(on)2
ID=--1.5A, VGS=--4.5V
58
82
mΩ
RDS(on)3
ID=--1.5A, VGS=--4V
61
86
mΩ
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=--10V, f=1MHz
--1.2
--1
μA
±10
μA
--2.6
V
S
600
pF
145
pF
Reverse Transfer Capacitance
Crss
110
pF
Turn-ON Delay Time
td(on)
tr
7.4
ns
27
ns
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--6A
IS=--6A, VGS=0V
62
ns
45
ns
13
nC
1.8
nC
3.2
nC
--0.87
--1.2
V
Switching Time Test Circuit
0V
--10V
VDD= --15V
VIN
ID= --3A
RL=5Ω
VOUT
VIN
D
PW=10μs
D.C.≤1%
G
P.G
50Ω
S
CPH6350
No. A1529-2/6
CPH6350
ID -- VDS
--3
.0
V
VDS= --10V
--8
VGS= --2.5V
--5
--4
--3
--2
--0.5
--1
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
Drain to Source Voltage, VDS -- V
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
IT14856
RDS(on) -- Ta
100
80
60
40
20
0
--2
--4
--6
--8
--10
--12
--14
7
Source Current, IS -- A
3
°C
-25
=a
T
°C
75
1.0
7
25
°C
5
3
2
0.1
7
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
--40
--20
0
20
2
3
5 7
40
60
80
100
120
5
IS -- VSD
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD -- V
f=1MHz
1000
Ciss, Coss, Crss -- pF
2
tr
10
td(on)
7
Ciss
5
3
2
Coss
Crss
100
5
VDD= --15V
VGS= --10V
3
5
7 --1.0
--1.2
IT14860
Ciss, Coss, Crss -- VDS
2
3
2
160
VGS=0V
--10
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.2
tf
7
140
IT14858
td(off)
7
3
--0.1
20
IT14859
SW Time -- ID
100
=
VGS
30
2
10
2
40
.0A
= --3
0V, I D
--10.
Ambient Temperature, Ta -- °C
VDS= --10V
5
A
1.5
= -, ID
V
5
.
4
= -V GS
50
IT14857
| yfs | -- ID
= -, ID
.0V
4
= -V GS
60
10
--60
--16
A
1.5
70
C
120
80
--25
°
--3.0A
25°C
140
90
5°C
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
ID= --1.5A
160
2
Forward Transfer Admittance, | yfs | -- S
--1.0
Gate to Source Voltage, VGS -- V
Ta=25°C
Gate to Source Voltage, VGS -- V
Switching Time, SW Time -- ns
--0.5
100
180
0
0
IT14855
RDS(on) -- VGS
200
0
--1.0
Ta=
7
0
25°
C
--1.0
--6
Ta=
75°
C
--25
°C
--1.5
Drain Current, ID -- A
--7
--6.0
V
--2.0
ID -- VGS
--9
--4
.
--18.0V
Drain Current, ID -- A
--2.5
--4.0V
5V -3 .5 V
--10.0V
--3.0
2
3
Drain Current, ID -- A
5
7 --10
2
IT14861
7
5
0
--5
--10
--15
--20
--25
Drain to Source Voltage, VDS -- V
--30
IT14862
No. A1529-3/6
CPH6350
VGS -- Qg
--10
3
2
--8
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
--9
--7
--6
--5
--4
--3
3
2
3
2
2
3
4
5
7
6
8
9
10
Total Gate Charge, Qg -- nC
12
11
13
IT14863
PD -- Ta
2.0
ID= --6A
DC
m
0m
op
10
0
1m μs
s
10
10
s
s
er
--1.0
7
5
--1
1
IDP= --24A (PW≤10μs)
3
2
--0.1
7
5
0
Allowable Power Dissipation, PD -- W
--10
7
5
--2
0
ASO
5
VDS= --10V
ID= --6A
ati
on
Operation in this
area is limited by RDS(on).
(T
a=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.01 2 3
5 7--0.1
2 3
5 7--1.0
2 3
5 7 --10
Drain to Source Voltage, VDS -- V
2 3
5 7
IT14864
When mounted on ceramic substrate
(900mm2×0.8mm)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14865
No. A1529-4/6
CPH6350
Outline Drawing
CPH6350-TL-E, CPH6350-TL-W
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A1529-5/6
CPH6350
Note on usage : Since the CPH6350 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1529-6/6
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