NVTFS4C25N D

NVTFS4C25N
Power MOSFET
30 V, 17 mW, 22 A, Single N−Channel, m8FL
Features
•
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVTFS4C25NWF − Wettable Flanks Product
NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
17 mW @ 10 V
30 V
22 A
26.5 mW @ 4.5 V
N−Channel MOSFET
D (5−8)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
10.1
A
Continuous Drain
Current RqJA
(Notes 1, 3, 5)
TA = 25°C
Steady
State
Power Dissipation RqJA
(Notes 1, 3, 5)
Continuous Drain
Current RyJC
(Notes 1, 2, 4, 5)
TA = 25°C
TC = 25°C
Steady
State
PD
ID
TC = 85°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, IL = 6.7 Apk, L = 0.5 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
1
22.1
A
17.1
PD
MARKING DIAGRAM
W
3.0
1.8
TC = 85°C
TC = 25°C
S (1,2,3)
7.8
TA = 85°C
Power Dissipation
RyJC (Notes 1, 2, 4, 5)
Pulsed Drain Current
TA = 85°C
G (4)
14.3
WDFN8
(m8FL)
CASE 511AB
1
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
W
8.6
IDM
90
A
TJ,
Tstg
−55 to
+175
°C
IS
14
A
EAS
11.2
mJ
TL
260
°C
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values
shown; they are not constants and are valid for the specific conditions noted.
2. Psi (y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to a single case surface.
3. Surface−mounted on FR4 board using 650 mm2, 2 oz. Cu Pad.
4. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
5. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 1
1
Publication Order Number:
NVTFS4C25N/D
NVTFS4C25N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain) (Notes 6, 7 and 9)
Parameter
YqJC
10.5
Junction−to−Ambient – Steady State (Notes 6 and 8)
RqJA
50
Unit
°C/W
6. The entire application environment impacts the thermal resistance values shown; they are not constants and are valid for the specific
conditions noted.
7. Psi (y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to a single case surface.
8. Surface−mounted on FR4 board using 650 mm2, 2 oz. Cu Pad.
9. Assumes heat−sink sufficiently large to maintain constant case temperature independent of device power.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
15.3
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.3
−4.5
mV/°C
VGS = 10 V
ID = 10 A
13
17
VGS = 4.5 V
ID = 9 A
21
26.5
mW
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
23
S
Gate Resistance
RG
TA = 25°C
1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
500
VGS = 0 V, f = 1 MHz, VDS = 15 V
295
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
5.1
Threshold Gate Charge
QG(TH)
0.9
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Plateau Voltage
Total Gate Charge
pF
85
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 20 A
0.170
1.7
nC
2.7
VGP
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 20 A
3.3
V
10.3
nC
SWITCHING CHARACTERISTICS (Note 11)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
8.0
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 10 A, RG = 3.0 W
32
10
tf
3.0
td(ON)
4.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
25
13
2.0
10. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
11. Switching characteristics are independent of operating junction temperatures.
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2
ns
ns
NVTFS4C25N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
TJ = 25°C
0.87
1.2
TJ = 125°C
0.75
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 10 A
tRR
ta
tb
V
18.2
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
9.8
8.4
5.7
10. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
11. Switching characteristics are independent of operating junction temperatures.
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3
ns
nC
NVTFS4C25N
TYPICAL CHARACTERISTICS
40
40
4.5 V to 10 V
35
ID, DRAIN CURRENT (A)
3.8 V
25
3.6 V
20
3.4 V
15
3.2 V
10
3.0 V
TJ = 25°C
0
0
1
3
2
20
TJ = 25°C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A
0.022
0.012
0.002
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
4.5 5.0
TJ = 25°C
0.045
0.035
VGS = 4.5 V
0.025
0.015
VGS = 10 V
0.005
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9
10000
VGS = 0 V
ID = 10 A
VGS = 10 V
TJ = 150°C
1.6
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.032
1.7
TJ = −55°C
0
5
0.042
1.8
TJ = 125°C
10
0
4
0.052
3.0
30
2.8 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
4.0 V
30
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS = 5 V
4.2 V
1.5
1.4
1.3
1.2
1.1
1.0
1000
TJ = 125°C
100
TJ = 85°C
10
0.9
0.8
0.7
−50
1
−25
0
25
50
75
100
125
150
175
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NVTFS4C25N
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
700
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
800
Ciss
600
500
Coss
400
300
200
Crss
100
0
0
5
10
15
20
25
10
QT
8
6
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 20 A
2
0
30
0
4
2
6
8
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
12
20
100
VGS = 0 V
IS, SOURCE CURRENT (A)
18
tr
td(off)
10
td(on)
tf
1
VDD = 15 V
ID = 15 A
VGS = 10 V
16
14
12
10
8
TJ = 25°C
TJ = 125°C
6
4
2
0.1
1
10
0
100
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
NVTFS4C25N FBSOA
TC = 25°C, VGS = 10 V
ID, DRAIN CURRENT (A)
t, TIME (ns)
Qgd
Qgs
4
10
0.01 ms
0.1 ms
1
1 ms
0.1
0.1
dc
1
10 ms
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
100
1.0
NVTFS4C25N
TYPICAL CHARACTERISTICS
100
qJA, 650 mm2, 2 oz Cu Pad, single layer on FR4
R(t) (°C/W)
10
YJC, infinite heat sink assumption
@ 1% Duty Cycle
@ 2% Duty Cycle
@ 5% Duty Cycle
@ 10% Duty Cycle
@ 20% Duty Cycle
@ 50 % Duty Cycle
RqJA Single Pulse
RYJA Single Pulse
1
0.1
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Response
100
30
ID, DRAIN CURRENT (A)
25
GFS (S)
20
15
10
TJ(initial) = 25°C
10
TJ(initial) = 85°C
5
1
1.E−06
0
0
5
10
15
25
20
30
35
40
1.E−05
1.E−04
ID (A)
PULSE WIDTH (SECONDS)
Figure 13. GFS vs. ID
Figure 14. Avalanche Characteristics
1.E−03
ORDERING INFORMATION
Marking
Package
Shipping†
NVTFS4C25NTAG
4V25
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4C25NWFTAG
25WF
WDFN8
(Pb−Free)
1500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NVTFS4C25N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
B
D1
2X
0.20 C
8 7 6 5
4X
q
E1 E
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
6X
C
e
SEATING
PLANE
DETAIL A
8X
e/2
L
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
0.65
PITCH
PACKAGE
OUTLINE
K
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
1
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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Sales Representative
NVTFS4C25N/D