Comparing Toshiba TC58NVG2S0F with Macronix MX30LF4G28AB

APPLICATION NOTE
Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
1. Introduction
This application note is a migration guide for comparing the Toshiba TC58NVG2S0F with the Macronix
MX30LF4G28AB 4Gb SLC NAND Flash. The document does not provide detailed information on the individual
devices, but highlights the major similarities and differences between them. The comparison covers the general
features, performance, command codes and other differences.
The information in this document is based on datasheets listed in Section 8. Newer versions of the datasheets
may override the contents of this document.
2. General Features
The two devices have a different page size and block size. Feature differences are highlighted in Bold Italic
type in Table 2-1.
Table 2-1. Key Feature Comparison
Brand
Part Number
Voltage
Bus Width
Operating Temperature
ONFI Interface
Memory Cell Array
Plane Size
Page Size
Block Size
Cache Read/Program
ECC requirement
OTP
Unique ID
Guaranteed Good Blocks at shipping
Data Retention
Endurance
Valid Block Number
Package
P/N: AN0273
Toshiba
TC58NVG2S0F
2.7V - 3.6V
x8
-40°C to 85°C
N/A
(512M+28M) x 8 bits
2 Planes x 1024 Blocks/Plane
(4K+224)B
(256K+14K)B
(4K+224)B
4bit/512B
N/A
N/A
Block#0
Not Specified
Not Specified
2008 (Min.) / 2048 (Max.)
48TSOP (12x20mm)
63-VFBGA (9x11mm)
1
Macronix
MX30LF4G28AB
2.7V - 3.6V
x8
-40°C to 85°C
ONFI 1.0 Compliant
(512M+28M) x 8 bits
2 Planes x 2048 Blocks/Plane
(2K+112)B
(128K+7K)B
(2K+112)B
8bit/540B
30 Pages
ONFI Standard
Block#0
10 Years
100K Cycles
4016 (Min.) / 4096 (Max.)
48TSOP (12x20mm)
63-VFBGA (9x11mm)
REV. 3, JUN. 10, 2014
APPLICATION NOTE
Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
3. Electrical Performance
There are some minor performance differences between the two devices which are highlighted in Bold Italic in
Table 3-1.
Table 3-1. Key Performance Comparison
Brand
Part Number
Performance
Random (tR)
Cache Read
Access Time
Busy time
Sequential
Page Program
Program Time Cache Program
Busy time
Erase Time
Block
Standby (TTL)
Standby (CMOS)
Active Read
Active
Program/Erase
Current
Consumption Power-up Current
(Including POR
Current)
Input Leakage
Output Leakage
Partial-Page
Programs
P/N: AN0273
NOP
Min.
-
Toshiba
TC58NVG2S0F
Typ.
Max.
30us
Macronix
MX30LF4G28AB
Min.
Typ.
Max.
25us
-
-
-
30us
-
2us
25us
25ns
-
300us
700us
20ns
-
300us
600us
-
-
700us
-
3us
600us
-
3ms
-
10ms
50uA
30mA
-
-
-
30mA
-
1ms
10uA
20mA
20mA/
15mA
10ms
1mA
50uA
30mA
30mA/
30mA
-
-
-
-
-
30mA
-
-
+/- 10uA
+/- 10uA
-
-
+/- 10uA
+/- 10uA
-
-
4 cycles
-
-
4 cycles
2
REV. 3, JUN. 10, 2014
APPLICATION NOTE
Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
4. Command Set
Command Set differences are highlighted in Bold Italic type in Table 4-1 as below:
Table 4-1. Command Set
Brand
Part Number
Command Description
Read
Random Data Input
Random Read Data Output
Cache Read Random
Cache Read Sequential
Cache Read End
Read ID
Parameter Page Read (ONFI)
Read Unique ID (ONFI)
Get Features (ONFI)
Set Features (ONFI)
Reset
Page Program
Cache Program
Page Program with 2KB Data(Note1)
Copy-back Program with 2KB Data(Note1)
Block Erase
Read Status Resister
Status Enhanced Read
Toshiba
TC58NVG2S0F
1st cmd Cycle
00h
85h
05h
31h
3Fh
90h
FFh
80h
80h
80h-11h
85h-11h
60h
70h
(Note2)
71h
OTP Area Access
Two-plane Program
Two-plane Cache Program (ONFI)
Two-plane Block Erase (ONFI)
Read for Page Copy(2) with Data
(Note3)
Auto Program with Data Cache during
Page Copy(2)(Note3)
Auto Program for last page during
Page Copy(2)(Note3)
2nd cmd Cycle
30h
E0h
10h
15h
80h-10h
80h-10h
D0h
-
80h-11h/81h-15h/81h-10h
00h
3Ah
Macronix
MX30LF4G28AB
1st cmd Cycle
2nd cmd Cycle
00h
30h
85h
05h
E0h
00h
31h
31h
3Fh
90h
ECh
EDh
EEh
EFh
FFh
80h
10h
80h
15h
60h
D0h
70h
78h
Set Feature followed by normal
read/program command
80h-11h
80h-10h
80h-11h
80h-15h
60h-D1h
60h-D0h
-
8Ch
15h
-
-
8Ch
10h
-
-
Notes:
1. The additional command to program with 2KB data for TC58NVG2G0F is not necessary for MX30LF4G28AB since the page
program command can program 2KB data.
2. The 71h command is status read for multi-Page Program or Multi Block Erase, which has the similar purpose with the 78h command of
MX30LF4G28AB.
3. Toshiba proprietary command
P/N: AN0273
3
REV. 3, JUN. 10, 2014
APPLICATION NOTE
Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
5. Status Register Comparison (70h command)
The Status Register bits are compatible (Table 5-1). However, the 2nd status register for the multi-plane is
slightly different (Table 5-2). The 2nd status register of TC58NVG2S0F uses the I/O [5:1] bits to provide multiplane status, while the MX30LF4G28AB uses SR[1:0] when using the status enhanced read command (78h).
Please refer to their individual datasheet for more details.
Table 5-1. Status Register Comparison
Brand
Part Number
I/O1
I/O2
I/O3
I/O4
I/O5
Toshiba
TC58NVG2S0F
Program/Erase Pass or Fail
Cache Program Pass or Fail
Not Used
Not Used
Not Used
Brand
Part Number
SR[0]
SR[1]
SR[2]
SR[3]
SR[4]
Macronix
I/O6
Ready/Busy for Page Buffer
SR[5]
Ready/Busy for Internal Controller
Program/Erase/Read Operation
I/O7
I/O8
Ready/Busy for Data Cache
Write Protect
SR[6]
SR[7]
Ready/Busy
Write Protect
Brand
Part Number
Command
SR[0](Note1)
SR[1](Note1)
SR[2]
SR[3]
SR[4]
(Note2)
SR[5]
(Note2)
SR[6]
SR[7]
Macronix
MX30LF4G28AB
78h
Program/Erase(Pass/Fail)
Cache Program(Pass/Fail)
Not Used
Not Used
Not Used
Ready/Busy (P/E/R controller)
Ready/Busy
Write Protect
MX30LF4G28AB
Program/Erase Pass or Fail
Cache Program Pass or Fail
Not Used
Not Used
Not Used
Table 5-2. Status Register for Multi-plane
Brand
Part Number
Command
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
Toshiba
TC58NVG2S0F
71h
Chip Status1 (Pass/Fail)
District 0 Chip status1 (Pass/Fail)
District 1 Chip status1 (Pass/Fail)
District 0 Chip status2 (Pass/Fail)
District 1 Chip status2 (Pass/Fail)
Ready/Busy
Data Cache Ready/Busy
Write Protect
Note 1: SR [0:1] are for the status of specific plane in the row address.
Note 2: SR [5:6] shared with all planes.
P/N: AN0273
4
REV. 3, JUN. 10, 2014
APPLICATION NOTE
Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
6. Package Pin/Ball Definition
The TC58NVG2S0F can be compared with the MX30LF4G28AB without pin conflicts because the differences
are with the DNU (Do Not Use) and NC (No Connect = Not Bonded) pins. The differences in VCC/VSS pins are
also not an issue as they are for ONFI compatibility, and are not internally bonded. (See Table 6-1 and 6-2).
The functions of the TC58NVG2S0F and MX30LF4G28AB I/O pins are the same but their naming is different.
The TC58NVG2S0F has its I/O pins named IO1 to IO8, whereas the MX30LF4G28AB has its I/O pins named
IO0 to IO7.
Table 6-1. 48-TSOP Package Pin Definition
Brand
Toshiba
Part Number
TC58NVG2S0F
#48 pin
NC
#39 pin
NC
#38 pin
NC
#34 pin
NC
#25 pin
NC
Macronix
MX30LF4G28AB
VSS (might not be bonded, just for ONFI
compatibility)
VCC (might not
be bonded, just for ONFI
compatibility)
DNU
VCC (might not be bonded, just for ONFI
compatibility)
VSS (might not
be bonded, just for ONFI
compatibility)
Table 6-2. 63-VFBGA Package Ball Definition
Brand
Toshiba
Part Number
TC58NVG2S0F
#D3 ball
NC
#G4 ball
NC
#G5 ball
NC
#F7 ball
NC
P/N: AN0273
Macronix
MX30LF4G28AB
VCC (might not be bonded, just for ONFI
compatibility)
VCC (might not
be bonded, just for ONFI
compatibility)
DNU
VSS (might not be bonded, just for ONFI
compatibility)
5
REV. 3, JUN. 10, 2014
APPLICATION NOTE
Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
7. Device Identification
The ID codes of the TC58NVG2S0F and MX30LF4G28AB are different (Table 7-1).
Table 7-1. Device Identification
Band
Part Number
ID Code
1st Byte
2nd Byte
bit 1- 0
bit 3 - 2
3rd Byte
ID Definition
4th Byte
bit 5 - 4
bit 6
bit 7
bit 1- 0
bit 2
bit 7, 3
bit 5 - 4
bit 6
bit 1- 0
5th Byte
bit 3 - 2
bit 6 - 4
bit 7
Toshiba
TC58NVG2S0F
98h/DCh/00h/22h/64h
Manufacturer ID
Device ID
Number of Die per CE
Cell Structure
Macronix
MX30LF4G28AB
C2h/DCh/90h/95h/57h
Manufacturer ID
Device ID
Number of Die per CE
Cell Structure
Number of Concurrently
Programmed Pages
Interleaved
Programming between
multiple
devices
Cache program
Page Size
Page Size
Spare Area Size
Sequential Read Cycle Time
Block Size (Excluding spare area) Block Size (Excluding spare area)
Organization
ECC level requirement,
8-bit ECC required (bit1:0=11b)
Plane number
Plane number
Plane Size (Excluding spare area)
Reserved
-
8. References
Table 8-1 shows the datasheet versions used for comparison in this application note. For the most current,
detailed Macronix specification, please refer to the Macronix Website at http://www.macronix.com.
Table 8-1. Datasheet Versions
Data sheet
MX30LF4G28AB
TC58NVG2S0FBAI4
TC58NVG2S0FTAI0
P/N: AN0273
Location
Website
Website
Website
Date Issued
June 2014
Sept. 2012
Sept. 2012
6
Revision
Rev. 1.1
Rev. 1.1
Rev. 1.5
REV. 3, JUN. 10, 2014
APPLICATION NOTE
Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
9. Summary
The Macronix MX30LF4G28AB and Toshiba TC58NVG2S0F NAND flash share the same basic Read, Program,
and Erase commands, also have similar pinouts. Firmware changes may be needed to accommodate
differences in page size, block size and ECC requirements.
10. Part Number Cross Reference
Table 10-1. Part Number Cross Reference
Bus Width
Voltage
Package
63-VFBGA
x8
3.3V
48-TSOP
Toshiba Part Number
TC58NVG2S0FBAI4
TC58NVG2S0FTAI0
Macronix Part Number
MX30LF4G28AB-XKI
MX30LF4G28AB-TI
11. Revision History
Table 11-1. Revision History
Revision No.
Description
Page
Date
REV. 1
REV. 2
Initial Release
Table 3-1 values revised to match Macronix Rev1.1 datasheet
ALL
2
Dec. 17, 2013
Jun. 10, 2014
P/N: AN0273
7
REV. 3, JUN. 10, 2014
APPLICATION NOTE
Comparing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix
MX30LF4G28AB
Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are
designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only,
and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property
damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and
all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and
regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen
therefrom.
Copyright© Macronix International Co., Ltd. 2014. All rights reserved, including the trademarks and tradename thereof,
such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash,
HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix
MAP, Rich Au-dio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for
identification purposes only.
For the contact and order information, please visit Macronix’s Website at: http://www.macronix.com
P/N: AN0273
8
REV. 3, JUN. 10, 2014
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