MBRF20100CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94 V−0 @ 0.125 in Electrically Isolated. No Isolation Hardware Required. These are Pb−Free Devices http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS 1 2 3 ISOLATED TO−220 CASE 221D STYLE 3 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal 1 2 3 Leads are Readily Solderable • Lead Temperature for Soldering Purposes: ORDERING AND MARKING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. 260°C Max. for 10 Seconds © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 9 1 Publication Order Number: MBRF20100CT/D MBRF20100CT MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit VRRM VRWM VR 100 V IF(AV) 10 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 133°C IFRM 20 A Non−repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR), TC = 133°C Total Device Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Operating Junction and Storage Temperature Range (Note 1) Voltage Rate of Change (Rated VR) IRRM 0.5 A TJ, Tstg − 65 to +175 °C dv/dt 10000 V/ms RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2) Viso1 4500 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (Per Leg) Symbol Rating Maximum Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds Value Unit RqJC 3.5 °C/W TL 260 °C Symbol Max Unit ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 10 Amp, TC = 25°C) (iF = 10 Amp, TC = 125°C) (iF = 20 Amp, TC = 25°C) (iF = 20 Amp, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.85 0.75 0.95 0.85 mA 0.15 150 50 TJ = 150°C 150°C 20 I R, REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 10 100°C 5.0 TJ = 25°C 3.0 1.0 10 TJ = 125°C TJ = 100°C 1.0 0.1 0.01 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.9 1.0 TJ = 25°C 0 Figure 1. Typical Forward Voltage Per Diode 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) 120 Figure 2. Typical Reverse Current Per Diode http://onsemi.com 2 MBRF20100CT MARKING DIAGRAMS AYWW B20100G AKA TO−220 B20100 A Y WW G AKA = Device Code = Assembly Location = Year = Work Week = Pb−Free Package = Polarity Designator ORDERING INFORMATION Device MBRF20100CTG Package Shipping† TO−220 (Pb−Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 MBRF20100CT PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE Y FULLPAK is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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