Complementary Silicon Plastic Power Transistors

MJW21192 (NPN),
MJW21191 (PNP)
Complementary Silicon
Plastic Power Transistors
Specifically designed for power audio output, or high power drivers
in audio amplifiers.
•
•
•
•
•
DC Current Gain Specified up to 8.0 A at Temperature
All On Characteristics at Temperature
High SOA: 20 A, 18 V, 100 ms
TO−247AE Package
Pb−Free Packages are Available*
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8.0 A
POWER TRANSISTORS
COMPLEMENTARY SILICON
150 V, 125 W
MAXIMUM RATINGS
Symbol
MJW21191
MJW21192
Unit
VCEO
150
Vdc
Collector−Base Voltage
VCB
150
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
IC
8.0
16
Adc
Rating
Collector−Emitter Voltage
Collector Current − Continuous
− Peak
Base Current
IB
2.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
125
0.65
W
W/_C
TJ, Tstg
– 65 to
+ 150
_C
Symbol
Max
Unit
RqJC
1.0
_C/W
RqJA
50
_C/W
Operating and Storage Junction
Temperature Range
TO−247
CASE 340L
STYLE 3
1 2 3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MJW2119x
AYWWG
1 BASE
2 COLLECTOR
x
A
Y
WW
G
1000
C, CAPACITANCE (pF)
PNP
NPN
100
3 EMITTER
= 1 or 2
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
10
Device
Package
Shipping
MJW21191
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
MJW21191G
1.0
1.0
10
100
VR, REVERSE VOLTAGE (V)
1000
MJW21192
MJW21192G
Figure 1. Typical Capacitance @ 25°C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 3
1
Publication Order Number:
MJW21192/D
MJW21192 (NPN), MJW21191 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
150
−
−
10
−
10
15
5.0
100
−
−
−
1.0
2.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0)
ICES
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 8.0 Adc, VCE = 2.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 8.0 Adc, IB = 1.6 Adc)
VCE(sat)
Vdc
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 2.0 Vdc)
VBE(on)
−
2.0
Vdc
fT
4.0
−
MHz
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = ⎪hfe⎪• ftest.
1.0
TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
P(pk)
DUTY
CYCLE,
D = t1/t2
0.2
0.1
t1
0.1
t2
ZθJC(t) = r(t) RθJC
RθJC = 1.65°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
0.05
0.02
0.01
0.01
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 2. Thermal Response
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 3 and 4 is based on T J(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. T J(pk) may be calculated from the data in
Figure 2. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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2
MJW21192 (NPN), MJW21191 (PNP)
NPN — MJW21192
PNP — MJW21191
100
IC , COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
100
10ms
100 ms
10
250ms
1.0
10 ms
100 ms
10
250 ms
1.0
0.1
0.1
1.0
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
1000
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
Figure 4. PNP — MJW21191
Safe Operating Area
Figure 3. NPN — MJW21192
Safe Operating Area
TYPICAL CHARACTERISTICS
NPN — MJW21192
PNP — MJW21191
1000
1000
100
h FE , DC CURRENT GAIN
h FE, DC CURRENT GAIN
50°C
50°C
100°C
100°C
100
25°C
10
1.0
25°C
10
1.0
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. PNP — MJW21191
VCE = 2.0 V DC Current Gain
Figure 5. NPN — MJW21192
VCE = 2.0 V DC Current Gain
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3
100
MJW21192 (NPN), MJW21191 (PNP)
NPN — MJW21192
PNP — MJW21191
1000
1000
100
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
50°C
50°C
100°C
100
25°C
10
1.0
25°C
10
1.0
0.01
0.1
1.0
10
100
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 7. NPN — MJW21192
VCE = 5.0 V DC Current Gain
Figure 8. PNP — MJW21191
VCE = 5.0 V DC Current Gain
100
1.0
1.0
100°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
100°C
25°C
0.1
0.1
100°C
25°C
0.01
0.01
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
0.1
10
Figure 9. NPN — MJW21192
VCE(sat) IC/IB = 5.0
1.0
IC, COLLECTOR CURRENT (AMPS)
10
Figure 10. PNP — MJW21191
VCE(sat) IC/IB = 5.0
1.0
10
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
100°C
25°C
0.1
1.0
0.1
100°C
25°C
0.01
0.01
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 11. NPN — MJW21192
VCE(sat) IC/IB = 10
10
0.1
SPACE
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4
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 12. PNP — MJW21191
VCE(sat) IC/IB = 10
10
MJW21192 (NPN), MJW21191 (PNP)
NPN — MJW21192
PNP — MJW21191
10
1.0
25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
10
50°C
1.0
25°C
100°C
50°C
100°C
0.1
0.1
0.001
1.0
0.01
0.1
IC, COLLECTOR CURRENT (AMPS)
10
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 14. PNP — MJW21191
VCE = 2.0 V VBE(on) Curve
Figure 13. NPN — MJW21192
VCE = 2.0 V VBE(on) Curve
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5
10
MJW21192 (NPN), MJW21191 (PNP)
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 3:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
BASE
COLLECTOR
EMITTER
COLLECTOR
S
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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