SavantIC Semiconductor Product Specification MJW21191 Silicon PNP Power Transistors DESCRIPTION ·With TO-247 package ·Complement to type MJW21192 ·Wild area of safe operation APPLICATIONS ·Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A ICM Collector current-peak -16 A IB Base current -2 A PD Total power dissipation 100 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.65 UNIT /W SavantIC Semiconductor Product Specification MJW21191 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-10mA ;IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=-8A; IB=-1.6A -2.0 V VBE(ON) Base-emitter on voltage IC=-4A ; VCE=-2V -2.0 V ICES Collector cut-off current VCB=-150V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE-1 DC current gain IC=-4A ; VCE=-2V 15 hFE-2 DC current gain IC=-8A ; VCE=-2V 5 Transition frequency IC=-1.0A ; VCE=-10V,f=1MHz fT CONDITIONS 2 MIN TYP. MAX -150 4.0 UNIT V 100 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 MJW21191