One Watt Darlington Transistor PNP

ON Semiconductort
MPSW63
MPSW64 *
One Watt Darlington
Transistors
PNP Silicon
w
*ON Semiconductor Preferred Device
These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
1
Symbol
MPSW63
MPSW64
Unit
Collector −Emitter Voltage
VCES
−30
Vdc
Collector −Base Voltage
VCBO
−30
Vdc
Emitter −Base Voltage
Rating
VEBO
−10
Vdc
Collector Current — Continuous
IC
−500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
−55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Operating and Storage Junction
Temperature Range
2
3
CASE 29−10, STYLE 1
TO−92 (TO−226AE)
COLLECTOR 3
BASE
2
THERMAL CHARACTERISTICS
Characteristic
EMITTER 1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)CES
−30
—
Vdc
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
ICBO
—
−100
nAdc
Emitter Cutoff Current
(VEB = −10 Vdc, IC = 0)
IEBO
—
−100
nAdc
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −100 μAdc, VBE = 0)
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
MPSW63/D
MPSW63 MPSW64
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
5,000
10,000
—
—
10,000
20,000
—
—
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 Vdc)
hFE
MPSW63
MPSW64
(IC = −100 mAdc, VCE = −5.0 Vdc)
—
MPSW63
MPSW64
Collector−Emitter Saturation Voltage
(IC = −100 mAdc, IB = −0.1 mAdc)
VCE(sat)
—
−1.5
Vdc
Base−Emitter On Voltage
(IC = −100 mAdc, VCE = −5.0 Vdc)
VBE(on)
—
−2.0
Vdc
fT
125
—
MHz
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product(2)
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| • ftest.
TYPICAL ELECTRICAL CHARACTERISTICS
h FE, DC CURRENT GAIN (X1.0 k)
200
TJ = 125°C
100
70
50
−10 V
25°C
30
VCE = −2.0 V
20
−5.0 V
10
7.0
5.0
3.0
2.0
−0.3
−55°C
−0.5
−0.7
−1.0
−2.0
−3.0
−5.0
−7.0
−10
−20
−30
−50
−70
−100
−200
−300
IC, COLLECTOR CURRENT (mA)
−2.0
TJ = 25°C
V, VOLTAGE (VOLTS)
−1.6
VBE(sat) @ IC/IB = 100
−1.2
−0.8
VBE(on) @ VCE = −5.0 V
VCE(sat) @ IC/IB = 1000
IC/IB = 100
−0.4
0
−0.3 −0.5 −1.0
−3.0 −5.0
−10
−30 −50 −100
−300
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
−2.0
TJ = 25°C
−1.8
−1.6
−50 mA −100 mA −175 mA
−1.4
−300 mA
−1.2
−1.0
−0.8
IC = −10 mA
−0.6
−0.1 −0.3
−1.0 −3.0
−10
−30
−100 −300 −1 k −3 k −10 k
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 2. “ON” Voltage
Figure 3. Collector Saturation Region
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2
*APPLIES FOR IC/IB ≤ hFE/100
+3.0
+25°C TO +125°C
+2.0
+1.0
−50°C TO +25°C
0
−1.0
−2.0
*RqVC FOR VCE(sat)
−3.0
−4.0
−50°C TO +25°C
RqVB FOR VBE
−5.0
−0.3 −0.5 −1.0
20
15
C, CAPACITANCE (pF)
f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
+5.0
+4.0
10
+25°C TO +125°C
−2.0
−5.0
−10
−50 −100
−20
−300
VCE = −20 V
200
100
−10 V
60
−5.0 V
40
30
20
−0.3 −0.5 −1.0 −2.0
−5.0 −10
−20
−50 −100
−300
Figure 4. Temperature Coefficients
Figure 5. Current−Gain — Bandwidth Product
−2 k
Cibo
7.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−1 k
100 ms
1.0 mS
−500
TJ = 25°C
f = 1.0 MHz
1.0 s
−0.5
−1.0
−2.0
−5.0
−10
DUTY CYCLE ≤ 10%
−100
−1.5 −2.0
−20 −30
TC = 25°C
TA = 25°C
−200
3.0
2.0
−0.1 −0.2
TJ = 25°C
400
300
IC, COLLECTOR CURRENT (mA)
Cobo
5.0
600
IC, COLLECTOR CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
R qV , TEMPERATURE COEFFICIENT (mV/ °C)
MPSW63 MPSW64
−5.0
−10
−20
VR, REVERSE VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
Figure 7. Active Region, Safe Operating Area
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3
−30
MPSW63 MPSW64
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−10
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
F
SEATING
PLANE
L
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
D
G
H
J
R
1 2 3
N C
SECTION X−X
N
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.135
−−−
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.457
0.533
0.407
0.482
1.15
1.39
2.42
2.66
0.46
0.61
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
3.43
−−−
YLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MPSW63/D