100V, 3A, Low VCE(sat) NPN Transistor

NSS1C301ET4G
100 V, 3.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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100 VOLTS, 3.0 AMPS
12.5 WATTS
NPN LOW VCE(sat) TRANSISTOR
COLLECTOR
2, 4
1
BASE
Features
• Complement to NSS1C300ET4G
• NSV Prefix for Automotive and Other Applications Requiring
3
EMITTER
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
4
•
1 2
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
140
Vdc
Collector−Emitter Voltage
VCEO
100
Vdc
VEB
6.0
Vdc
Emitter−Base Voltage
Collector Current − Continuous
IC
3.0
Adc
ICM
6.0
Adc
Base Current
IB
0.5
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
33
0.26
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
Collector Current − Peak
2.1
0.017
W
W/°C
−65 to +150
°C
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
YWW
1C31EG
Y
WW
1C31E
G
= Year
= Work Week
= Device Code
= Pb−Free
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
Package
Shipping†
NSS1C301ET4G
DPAK
(Pb−Free)
2500/
Tape & Reel
NSV1C301ET4G
DPAK
(Pb−Free)
2500/
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 5
1
Publication Order Number:
NSS1C301E/D
NSS1C301ET4G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.8
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
59.5
°C/W
Min
Typ
Max
Unit
100
−
−
140
−
−
6.0
−
−
−
−
0.1
−
−
0.1
200
200
120
80
−
−
−
−
−
−
360
−
−
−
−
−
0.015
0.045
0.080
0.115
0.050
0.090
0.150
0.250
−
−
1.0
−
−
0.90
−
120
−
−
360
−
−
30
−
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 140 V, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 V)
IEBO
V
V
V
mA
mA
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = 0.1 A, VCE = 2.0 V)
(IC = 0.5 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 3.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 10 mA)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
(IC = 3.0 A, IB = 0.300 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.1 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 500 mA, VCE = 10 V, f = 100 MHz)
−
V
V
V
fT
Input Capacitance
(VEB = 5.0 V, f = 1.0 MHz)
Cibo
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
MHz
pF
pF
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NSS1C301ET4G
TYPICAL CHARACTERISTICS
500
500
150°C
400
350
25°C
300
250
200
−55°C
150
100
50
0
0.1
1
400
350
25°C
300
250
200
−55°C
150
100
10
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. DC Current Gain
0.4
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.4
IC/IB = 10
0.3
150°C
0.2
25°C
0.1
−55°C
IC/IB = 50
0.3
0.2
150°C
25°C
0.1
−55°C
0
0
0.01
0.1
1
0.01
10
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Collector−Emitter Saturation
Voltage
Figure 4. Collector−Emitter Saturation
Voltage
1.2
1.2
−55°C
IC/IB = 10
1.0
VCE = 2 V
25°C
VBE(on), BASE−EMITTER
ON VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE = 5 V
50
0
0.01
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
450
VCE = 2 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
450
0.8
150°C
0.6
0.4
0.2
0
−55°C
1.0
25°C
0.8
150°C
0.6
0.4
0.2
0
0.01
0.1
1
10
0.01
IC, COLLECTOR CURRENT (A)
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 5. Base−Emitter Saturation Voltage
Figure 6. Base−Emitter “On” Voltage
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3
10
NSS1C301ET4G
TYPICAL CHARACTERISTICS
1.6
1,000
1.4
Cib
C, CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
TA = 25°C
1.2
IC = 3 A
1.0
IC = 2 A
0.8
IC = 1 A
0.6
IC = 0.5 A
0.4
IC = 0.1 A
10
0.1
1
10
100
1,000
0.1
10,000
1
10
IB, BASE CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 7. Collector Saturation Region
Figure 8. Capacitance
100
10
1,000
VCE = 5 V
IC, COLLECTOR CURRENT (A)
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
Cob
0.2
0
100
10
100 mS
1 mS
1S
1
100 mS
10 mS
0.1
Single Pulse Test at TA = 25°C
0.01
0.01
R(t), TRANSIENT THERMAL RESPONSE
(°C/W)
100
0.1
1
10
1
10
100
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Current−Gain−Bandwidth Product
Figure 10. Safe Operating Area
10
D = 0.5
1
0.2
0.1
0.05
RqJC(t) = r(t) RqJC
RqJC = 3.8°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.02
0.1
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
P(pk)
0.1
Figure 11. Typical Transient Thermal Response, Junction−to−Case
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4
t1
t2
DUTY CYCLE, D = t1/t2
1
10
NSS1C301ET4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NSS1C301E/D
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