100 V, 2.0 A, Low V CE(sat) NPN Transistor

NSS1C201MZ4,
NSV1C201MZ4
100 V, 2.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e 2 PowerEdge family of low V CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
http://onsemi.com
100 VOLTS, 2.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
COLLECTOR
2,4
1
BASE
Features
3
EMITTER
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MARKING
DIAGRAM
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
100
Vdc
Collector-Base Voltage
VCBO
140
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
2.0
A
ICM
3.0
A
Symbol
Max
Unit
800
6.5
mW
mW/°C
155
°C/W
2.0
15.6
W
mW/°C
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
64
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
710
mW
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
March, 2013 − Rev. 4
A
Y
W
1C201
G
AYW
1C201G
1
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
B
C
E
1
2
3
Top View Pinout
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 7.6 mm2, 1 oz. copper traces.
2. FR−4 @ 645 mm2, 1 oz. copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2013
SOT−223
CASE 318E
STYLE 1
1
Device
Package
Shipping†
NSS1C201MZ4T1G
NSV1C201MZ4T1G
SOT−223
(Pb−Free)
1000/
Tape & Reel
NSS1C201MZ4T3G
SOT−223
(Pb−Free)
4000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C201MZ4/D
NSS1C201MZ4, NSV1C201MZ4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
100
Vdc
Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0)
V(BR)CBO
140
Vdc
Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0)
V(BR)EBO
7.0
Vdc
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 140 Vdc, IE = 0)
ICBO
100
nA
Emitter Cutoff Current (VEB = 6.0 Vdc)
IEBO
50
nA
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 4)
(IC = 0.1 A, IB = 0.010 A)
(IC = 0.5 A, IB = 0.050 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 0.100 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
150
120
80
40
360
V
0.030
0.060
0.100
0.180
V
1.10
0.850
V
fT
100
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Cibo
305
pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
Cobo
22
pF
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
PD, POWER DISSIPATION (W)
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25
50
75
100
T, TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
2
125
150
NSS1C201MZ4, NSV1C201MZ4
TYPICAL CHARACTERISTICS
400
400
VCE = 2 V
150°C
320
360
hRE, DC CURRENT GAIN
hRE, DC CURRENT GAIN
360
280
240
25°C
200
160
120
−55°C
80
280
240
160
120
−55°C
80
40
0
0.001
0.01
0.1
1
0
0.001
10
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
Figure 3. DC Current Gain
10
1
IC /IB = 20
VCE(sat), COLLECTOR−EMITTER
SATURATOIN VOLTAGE (V)
IC /IB = 10
0.1
150°C
25°C
0.1
150°C
25°C
0.01
0.001
0.01
−55°C
0.1
1
10
−55°C
0.01
0.001
IC, COLLECTOR CURRENT (A)
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
Figure 5. Collector−Emitter Saturation Voltage
1.4
1.4
IC /IB = 10
VBE(sat), BASE−EMITTER SATURATOIN VOLTAGE (V)
1.2
0.01
IC, COLLECTOR CURRENT (A)
1
VBE(sat), COLLECTOR−EMITTER
SATURATOIN VOLTAGE (V)
25°C
200
40
VBE(sat), BASE−EMITTER SATURATOIN VOLTAGE (V)
VCE = 4 V
150°C
320
1
150°C
0.8
0.6
25°C
0.4
−55°C
0.2
0
0.001
0.01
0.1
1
10
1.2
IC /IB = 50
−55°C
1
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
Figure 7. Base−Emitter Saturation Voltage
http://onsemi.com
3
10
NSS1C201MZ4, NSV1C201MZ4
TYPICAL CHARACTERISTICS
1.00
VCE = 2 V
VCE(sat), COLLECTOR−EMITTER
SATURATOIN VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.0
0.001
0.01
0.1
1
0.5 A
1A
2A
0.10
TJ = 25°C
0.01
0.0001
10
0.001
IC, COLLECTOR CURRENT (A)
1
50
TJ = 25°C
fTEST = 1 MHz
350
COB, OUTPUT CAPACITANCE (pF)
CIB, INPUT CAPACITANCE (pF)
0.1
Figure 9. Collector Saturation Region
400
300
250
200
150
100
50
0
0
1
2
3
4
5
6
7
45
TJ = 25°C
fTEST = 1 MHz
40
35
30
25
20
15
10
5
0
0
8
10
20
30
40
50
60
70
80
90
100
VCB, COLLECTOR BASE VOLTAGE (V)
VEB, BASE−EMITTER VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
120
10
TJ = 25°C
fTEST = 1 MHz
VCE = 5 V
IC, COLLECTOR CURRENT (A)
fTau, CURRENT GAIN BANDWIDTH
(MHz)
0.01
IB, BASE CURRENT (A)
Figure 8. Base−Emitter Voltage
100
3A
IC = 0.1 A
80
60
40
20
0
0.001
0.01
0.1
1
10
0.5 mS
1
100 mS
1 mS
10 mS
0.1
TJ = 25°C
0.01
1
IC, COLLECTOR CURRENT (A)
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current Gain Bandwidth Product
Figure 13. Safe Operating Area
http://onsemi.com
4
100
NSS1C201MZ4, NSV1C201MZ4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
q
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NSS1C201MZ4/D
Similar pages