20 V, 3.0 A, Low V CE(sat) PNP Transistor

NSS20200W6
20 V, 3.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
http://onsemi.com
−20 VOLTS, 3.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 65 mW
COLLECTOR
1, 2, 5, 6
3
BASE
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−20
Vdc
Collector-Base Voltage
VCBO
−20
Vdc
Emitter-Base Voltage
VEBO
−7.0
Vdc
IC
−2.0
A
ICM
−3.0
A
Rating
Collector Current − Continuous
Collector Current − Peak
4
EMITTER
SC−88/SOT−363
CASE 419B
STYLE 20
1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
426
mW
3.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
293
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
555
mW
4.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
225
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz. copper traces.
2. FR−4 @ 500 mm2, 1 oz. copper traces.
DEVICE MARKING
6
VC M
G
1
VC = Specific Device Code
M = Date Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
NSS20200W6T1G
Package
Shipping†
SC−88
(Pb−Free)
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 2
1
Publication Order Number:
NSS20200W6/D
NSS20200W6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−20
−
−
−20
−
−
−7.0
−
−
−
−
−0.1
−
−
−0.1
250
220
200
160
370
325
290
245
−
−
−
−
−
−
−
−
−
−0.010
−0.067
−0.102
−0.128
−0.177
−0.014
−0.092
−0.126
−0.165
−0.215
−
−
−0.900
−
−
−0.900
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −20 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −7.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.1 A, IB = −0.010 A) (Note 4)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
(IC = −2.0 A, IB = −0.020 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
V
V
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
MHz
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
−
−
330
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
−
−
90
pF
Delay (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
65
ns
Rise (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
100
ns
Storage (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
320
ns
Fall (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
125
ns
SWITCHING CHARACTERISTICS
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
4. Guaranteed by design but not tested.
http://onsemi.com
2
NSS20200W6
TYPICAL CHARACTERISTICS
25°C
0.10
0.08
0.06
0.04
0.02
720
680
640
600
560
520
480
440
400
360
320
280
240
200
160
120
0.001
0.01
0.1
1
10
IC/IB = 100
0.18
150°C
0.16
0.14
25°C
0.12
0.10
0.08
0.06
0.04
0.02
0.001
1
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
150°C (2.0 V)
25°C (5.0 V)
25°C (2.0 V)
−55°C (5.0 V)
−55°C (2.0 V)
0.001
0.01
0.1
1
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
10
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
−55°C
25°C
0.7
150°C
0.5
0.4
0.3
0.001
0.01
10
1.0
IC/IB = 100
0.6
10
IC/IB = 10
1.0
IC, COLLECTOR CURRENT (A)
0.8
0.2
0.1
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
150°C (5.0 V)
0.9
0.01
IC, COLLECTOR CURRENT (A)
1.1
1.0
−55°C
IC, COLLECTOR CURRENT (A)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
0.12
0
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.14
0.20
−55°C
IC/IB = 10
VBE(on), BASE−EMITTER TURN ON
VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.16
0.1
1
10
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
Figure 6. Base Emitter Turn−On Voltage vs.
Collector Current
http://onsemi.com
3
10
NSS20200W6
TYPICAL CHARACTERISTICS
1.0
VCE COLLECTOR−EMITTER
VOLTAGE (V)
1A
330
2A
Cibo, INPUT CAPACITANCE (pF)
10 mA
0.9
100 mA
0.8
0.7
200 mA
0.6
0.5
500 mA
0.4
0.3
0.2
0.1
0
0.00001
0.0001
0.001
0.01
0.1
290
270
250
230
210
190
170
150
130
0
1
2
3
4
5
Veb, EMITTER BASE VOLTAGE (V)
Figure 7. Saturation Region
Figure 8. Input Capacitance
6
10
140
Cobo (pF)
IC, COLLECTOR CURRENT (A)
Cobo, OUTPUT CAPACITANCE (pF)
Cibo (pF)
Ib, BASE CURRENT (A)
150
130
120
110
100
90
80
70
60
50
310
0
1
2
3
4
5
6
7
8
1 ms
1
10 ms
1s
Thermal Limit
0.01
0.001
0.01
9 10 11 12 13 14 15
100 ms
0.1
Single Pulse Test @ TA = 25°C
0.1
1
10
Vcb, COLLECTOR BASE VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Safe Operating Area
http://onsemi.com
4
100
NSS20200W6
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
6
5
4
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
M
A3
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NSS20200W6/D
Similar pages