100V, 10A SWITCHMODE Power Rectifier

MBR10H100CT
SWITCHMODE]
Power Rectifier
100 V, 10 A
Features and Benefits
•
•
•
•
•
•
•
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Low Forward Voltage: 0.61 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
10 A Total (5.0 A Per Diode Leg)
Guard−Ring for Stress Protection
Pb−Free Package is Available
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES
100 VOLTS
1
2, 4
Applications
3
• Power Supply − Output Rectification
• Power Management
• Instrumentation
MARKING
DIAGRAM
4
Mechanical Characteristics:
•
•
•
•
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Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 Units Per Plastic Tube
MAXIMUM RATINGS
TO−220AB
CASE 221A
PLASTIC
1
2
AYWW
B10H100G
AKA
3
A
Y
WW
B10H100
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
Please See the Table on the Following Page
ORDERING INFORMATION
Device
MBR10H100CT
MBR10H100CTG
Package
Shipping
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 2
1
Publication Order Number:
MBR10H100CT/D
MBR10H100CT
MAXIMUM RATINGS (Per Diode Leg)
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC = 168°C
IF(AV)
5.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 165°C
IFRM
10
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
180
A
TJ
+175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
100
mJ
> 400
> 8000
V
2.0
60
°C/W
Operating Junction Temperature (Note 1)
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
ESD Ratings: Machine Model = C
Human Body Model = 3B
THERMAL CHARACTERISTICS
Maximum Thermal Resistance − Junction−to−Case
− Junction−to−Ambient
RqJC
RqJA
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 5.0 A, TC = 25°C)
(IF = 5.0 A, TC = 125°C)
(IF = 10 A, TC = 25°C)
(IF = 10 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 125°C)
(Rated DC Voltage, TC = 25°C)
iR
V
0.73
0.61
0.85
0.71
mA
4.5
0.0035
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR10H100CT
100
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.1
0
0.2
1.0
0.8
1.2
1.4
1.0E−01
IR, REVERSE CURRENT (AMPS)
1.0E−01
1.0E−02
TJ = 150°C
1.0E−02
TJ = 150°C
1.0E−03
1.0E−03
TJ = 125°C
1.0E−04
TJ = 125°C
1.0E−04
1.0E−05
1.0E−05
1.0E−06
TJ = 25°C
1.0E−06
TJ = 25°C
1.0E−07
1.0E−07
1.0E−08
0
20
40
60
80
100
20
40
60
80
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
10
dc
SQUARE WAVE
5
110
1.0E−08
0
PFO, AVERAGE POWER DISSIPATION
(WATTS)
IF, AVERAGE FORWARD CURRENT (AMPS)
0.6
Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 1. Typical Forward Voltage
0
100
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
120
130
140
150
160
170
180
16
14
12
10
8
SQUARE
6
DC
4
2
0
0
5
10
TC, CASE TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
100
15
MBR10H100CT
1000
C, CAPACITANCE (pF)
TJ = 25°C
100
10
0
20
40
60
80
100
VR, REVERSE VOLTAGE (VOLTS)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Capacitance
100
D = 0.5
10
0.2
0.1
1
0.05
P(pk)
0.01
t1
0.1
t2
SINGLE PULSE
0.01
0.000001
0.00001
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.1
0.01
1
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 8. Thermal Response Junction−to−Ambient
10
1
D = 0.5
0.2
0.1
0.05
0.1
P(pk)
0.01
t1
t2
SINGLE PULSE
0.01
0.000001
0.00001
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 9. Thermal Response Junction−to−Case
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4
10
100
1000
MBR10H100CT
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
ID
ID
IL
DUT
S1
VDD
t0
Figure 10. Test Circuit
t1
t2
t
Figure 11. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The unclamped inductive switching circuit shown in
Figure 10 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
V
BV
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
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5
Ǔ
MBR10H100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ANODE
CATHODE
ANODE
CATHODE
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative
MBR10H100CT/D
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