MBRB30H30CT 1 D

MBRB30H30CT-1G,
NRVBB30H30CT-1G,
MBR30H30CTG
Switch-mode
Power Rectifiers
30 V, 30 A
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SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 30 VOLTS
Features and Benefits
•
•
•
•
•
•
•
•
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
150°C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
Guard−Ring for Stress Protection
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
2, 4
3
4
MARKING
DIAGRAMS
I2PAK (TO−262)
CASE 418D
STYLE 3
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
12
3
4
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 1.5 Grams (I2PAK) (Approximately)
•
•
AYWW
B30H30G
AKA
1.9 Grams (TO−220) (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
TO−220
CASE 221A
STYLE 6
1
2
AYWW
B30H30G
AKA
3
A
Y
WW
B30H30
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING AND MARKING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 6
1
Publication Order Number:
MBRB30H30CT−1/D
MBRB30H30CT−1G, NRVBB30H30CT−1G, MBR30H30CTG
MAXIMUM RATINGS (Per Diode Leg)
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
V
Average Rectified Forward Current
(Rated VR) TC = 138°C
IF(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
Rating
A
15
A
30
A
260
Operating Junction Temperature (Note 1)
TJ
−55 to +150
°C
Storage Temperature
Tstg
*55 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
250
mJ
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
V
> 400
> 8000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
RqJC
RqJA
2.0
70
Symbol
Value
Unit
°C/W
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 15 A, TC = 25°C)
(IF = 15 A, TC = 125°C)
(IF = 30 A, TC = 25°C)
(IF = 30 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
Unit
V
0.48
0.40
0.55
0.53
mA
0.8
130
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBRB30H30CT−1G, NRVBB30H30CT−1G, MBR30H30CTG
100
TJ = 125°C
10
TJ = 25°C
1
0.1
0
0.1
0.2
0.4
0.3
0.5
0.6
0.7
0.8
0.9
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
TJ = 125°C
10
TJ = 25°C
1
0.1
0
0.1
1.0E−01
TJ = 125°C
0.7
0.8
0.9
1.0
TJ = 125°C
1.0E−02
1.0E−03
1.0E−03
TJ = 25°C
1.0E−04
10
5
15
1.0E−04
25
20
30
1.0E−05
0
TJ = 25°C
10
5
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
30
PFO, AVERAGE POWER DISSIPATION
(WATTS)
IF, AVERAGE FORWARD CURRENT (AMPS)
0.6
1.0E−01
1.0E−02
dc
25
SQUARE WAVE
15
10
5
0
100
0.5
1.0E−00
IR, REVERSE CURRENT (AMPS)
1.0E−00
20
0.4
0.3
Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 1. Typical Forward Voltage
1.0E−05
0
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
110
120
130
140
150
160
16
14
12
SQUARE
10
8
DC
6
4
2
0
0
5
10
15
20
TC, CASE TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
30
25
MBRB30H30CT−1G, NRVBB30H30CT−1G, MBR30H30CTG
3000
TJ = 25°C
C, CAPACITANCE (pF)
2500
2000
1500
1000
500
0
0
5
10
15
20
30
25
VR, REVERSE VOLTAGE (VOLTS)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Typical Capacitance
10
1
D = 0.5
0.2
0.1
0.05
P(pk)
0.1
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
t1, TIME (sec)
Figure 8. Thermal Response Junction−to−Case
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4
10
100
1000
MBRB30H30CT−1G, NRVBB30H30CT−1G, MBR30H30CTG
+VDD
IL
10 mH COIL
BVDUT
VD
ID
MERCURY
SWITCH
ID
IL
DUT
S1
VDD
t0
Figure 9. Test Circuit
t1
t2
Figure 10. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 9 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
BV
–V
DUT DD
Ǔ
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
ORDERING INFORMATION
Device
t
Package
Shipping
MBRB30H30CT−1G
TO−262
(Pb−Free)
50 Units / Rail
NRVBB30H30CT−1G
TO−262
(Pb−Free)
50 Units / Rail
MBR30H30CTG
TO−220
(Pb−Free)
50 Units / Rail
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5
MBRB30H30CT−1G, NRVBB30H30CT−1G, MBR30H30CTG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
N
STYLE 6:
PIN 1.
2.
3.
4.
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6
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MBRB30H30CT−1G, NRVBB30H30CT−1G, MBR30H30CTG
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D
ISSUE D
C
E
V
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
W
1
2
DIM
A
B
C
D
E
F
G
H
J
K
S
V
W
3
F
−T−
SEATING
PLANE
K
S
J
G
D 3 PL
0.13 (0.005) M T B
H
M
INCHES
MIN
MAX
0.335
0.380
0.380
0.406
0.160
0.185
0.026
0.035
0.045
0.055
0.122 REF
0.100 BSC
0.094
0.110
0.013
0.025
0.500
0.562
0.390 REF
0.045
0.070
0.522
0.551
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
8.51
9.65
9.65
10.31
4.06
4.70
0.66
0.89
1.14
1.40
3.10 REF
2.54 BSC
2.39
2.79
0.33
0.64
12.70
14.27
9.90 REF
1.14
1.78
13.25
14.00
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
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7
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For additional information, please contact your local
Sales Representative
MBRB30H30CT−1/D