30V SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES

MMBD301M3T5G
Silicon Hot-Carrier Diode
SCHOTTKY Barrier Diode
The MMBD301M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed primarily for
high−efficiency UHF and VHF detector applications. It is readily
adaptable to many other fast switching RF and digital applications
and is housed in the SOT−723 surface mount package. This device is
ideal for low−power surface mount applications where board space is
at a premium.
Features
•
•
•
•
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
Reduces Board Space
These Devices are Pb−Free and Halogen Free/BFR Free
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30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
3
CATHODE
1
ANODE
MARKING
DIAGRAM
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
30
V
Forward Current (DC)
IF
200 (Max)
mA
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PF
200
2.0
mW
mW/°C
Operating Junction Temperature Range
TJ
−55 to +125
°C
Tstg
−55 to +150
°C
Reverse Voltage
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SOT−723
CASE 631AA
STYLE 2
AK
M
AK M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Shipping†
Package
MMBD301M3T5G
SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10 mA)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
V
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
CT
−
0.9
1.5
pF
Reverse Leakage (VR = 25 V) Figure 3
IR
−
13
200
nAdc
Forward Voltage (IF = 1.0 mAdc) Figure 4
VF
−
0.38
0.45
Vdc
Forward Voltage (IF = 10 mAdc) Figure 4
VF
−
0.52
0.6
Vdc
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 1
1
Publication Order Number:
MMBD301M3/D
MMBD301M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
500
t , MINORITY CARRIER LIFETIME (ps)
C T, TOTAL CAPACITANCE (pF)
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
400
KRAKAUER METHOD
300
200
100
0
0
0
3.0
6.0
18
9.0
12
15
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
30
0
Figure 1. Total Capacitance
30
40
50
60
70
IF, FORWARD CURRENT (mA)
80
90
100
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
20
Figure 2. Minority Carrier Lifetime
10
TA = 100°C
1.0
75°C
0.1
25°C
0.01
0.001
10
10
TA = -40°C
TA = 85°C
1.0
TA = 25°C
0.1
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
24
30
0.2
Figure 3. Reverse Leakage
IF(PEAK)
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
1.0
Figure 4. Forward Voltage
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
STORAGE
CONDUCTION
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
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2
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
1.2
MMBD301M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
L2
RECOMMENDED
SOLDERING FOOTPRINT*
BOTTOM VIEW
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBD301M3/D
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