ONSEMI MMBD452LT1

MMBD452LT1
Preferred Device
Dual Hot−Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements.
Features
•
•
•
•
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Pb−Free Package is Available
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30 VOLTS
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
1
ANODE
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
225
1.8
mW
mW/°C
Operating Junction Temperature Range
TJ
−55 to +125
°C
Tstg
−55 to +150
°C
Storage Temperature Range
2
CATHODE
3
CATHODE/ANODE
3
1
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
MARKING DIAGRAM
5N M G
G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
1
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
V
Total Capacitance
(VR = 15 V, f = 1.0 MHz) Figure 1
CT
−
0.9
1.5
pF
Reverse Leakage
(VR = 25 V) Figure 3
IR
−
13
200
nAdc
Forward Voltage
(IF = 1.0 mAdc) Figure 4
VF
−
0.38
0.45
Vdc
Forward Voltage
(IF = 10 mAdc) Figure 4
VF
−
0.52
0.6
Vdc
Reverse Breakdown Voltage
(IR = 10 mA)
SOT−23 (TO−236)
CASE 318
STYLE 11
5N = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBD452LT1
SOT−23
3,000 / Tape & Reel
MMBD452LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
Publication Order Number:
MMBD452LT1/D
MMBD452LT1
TYPICAL ELECTRICAL CHARACTERISTICS
500
f = 1.0 MHz
2.4
t , MINORITY CARRIER LIFETIME (ps)
C T, TOTAL CAPACITANCE (pF)
2.8
2.0
1.6
1.2
0.8
0.4
0
0
3.0
6.0
18
9.0
12
15
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
400
KRAKAUER METHOD
300
200
100
0
30
0
Figure 1. Total Capacitance
30
40
50
60
70
IF, FORWARD CURRENT (mA)
80
90
100
100
TA = 100°C
1.0
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
20
Figure 2. Minority Carrier Lifetime
10
75°C
0.1
25°C
0.01
0.001
10
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
24
10
1.0
0.1
30
TA = 25°C
0.2
Figure 3. Reverse Leakage
IF(PEAK)
TA = −40°C
TA = 85°C
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
1.0
Figure 4. Forward Voltage
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
STORAGE
CONDUCTION
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
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2
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
1.2
MMBD452LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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MMBD452LT1/D