Dual RF Schottky Diode

NSR15ADXV6T1,
NSR15ADXV6T5
Dual RF
Schottky Diode
These diodes are designed for analog and digital applications,
including DC based signal detection and mixing applications.
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Features
•
•
•
•
Low Capacitance (<1.0 pF)
Low VF (390 mV Typical @ 1.0 mA)
Low VF (1.0 mV Typical @ 1.0 mA)
These are Pb−Free Devices
RF SCHOTTKY
BARRIER DIODES
15 VOLTS, 30 mA
Benefits
• Reduced Parasitic Losses
• Accurate Signal Measurement
6
5
4
1
2
3
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Reverse Voltage
VR
15
V
Forward Current
IF
30
mA
TJ, Tstg
−65 to
+150
°C
Operating and Storage
Temperature Range
ESD Rating:
Class 1 per Human Body Model
Class A per Machine Model
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MARKING
DIAGRAM
6
1
5RD
SOT−563
CASE 463A
5R = Specific Device Code
D
= Date Code
ORDERING INFORMATION
Package
Shipping†
NSR15ADXV6T1
SOT−563
4 mm pitch
4000 / Tape & Reel
NSR15ADXV6T5
SOT−563
2 mm pitch
8000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3
1
Publication Order Number:
NSR15ADXV6T1/D
NSR15ADXV6T1, NSR15ADXV6T5
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Breakdown Voltage (IR = 10 A)
VBR
15
20
−
V
Reverse Leakage (VR = 1.0 V)
IR
−
2
50
nA
Forward Voltage (IF = 1.0 mA)
VF1
−
390
415
mV
Forward Voltage (IF = 10 mA)
VF2
−
530
680
mV
Delta VF
VF
−
1
15
mV
CT
−
0.8
1
pF
Capacitance (VF = 0 V, f = 1.0 MHz)
100 k
IR, REVERSE CURRENT (nA)
IF, FORWARD CURRENT (mA)
100
10
25°C
75°C
1
125°C
−25°C
0.1
0.01
10 k
125°C
1k
75°C
100
25°C
10
1
0
0.1
0.2
0.3
0.4
0.5
VF, FORWARD VOLTAGE (V)
0.6
0
0.7
5
10
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Current versus Forward
Voltage at Temperatures
Figure 2. Reverse Current versus Reverse
Voltage
1000
RD, DYNAMIC RESISTANCE ()
CT, CAPACITANCE (pF)
1
0.9
0.8
0.7
0.6
0.5
15
100
10
1
0
1
2
3
4
5
6
VR, REVERSE VOLTAGE (V)
7
8
0.1
Figure 3. Total Capacitance versus Reverse
Voltage
1
10
IF, FORWARD CURRENT (mA)
100
Figure 4. Dynamic Resistance versus Forward
Current
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2
100
IF (left scale)
10
10
VF (right scale)
1
0.3
0.4
0.5
0.6
0.7
VF, FORWARD VOLTAGE (V)
0.8
0.1
Figure 5. Typical VF Match at Mixer Bias Levels
1
VF (right scale)
1
0.1
0.175
0.275
0.225
VF, FORWARD VOLTAGE (V)
0.325
Figure 6. Typical VF Match at Detector Bias Levels
1
10
DC Bias = 3 A
1
0.1
0.1
VDET, (Vdc)
VDET, (Vdc)
IF (left scale)
10
1
0.1
10
100
VF, FORWARD VOLTAGE DIFFERENTIAL (mV)
IF, FORWARD CURRENT (mA)
100
VF, FORWARD VOLTAGE DIFFERENCE (mV)
IF, FORWARD CURRENT (A)
NSR15ADXV6T1, NSR15ADXV6T5
VO
RF IN
18 nH
0.01
0.001
VO
RF IN
0.0001
100 pF
3.3 nH
0.01
68 100 k
100 pF
4.7 k
0.00001
0.001
−40
−35
−30
−25 −20
−15
−10
Pin, INPUT POWER (dBm)
−5
0.000001
−20 −15 −10
0
Figure 7. Typical Output Voltage versus Input Power,
Small Signal Detector Operating at 850 MHz
5
10 15
−5
0
Pin, INPUT POWER (dBm)
CONVERSION LOSS (dB)
10
9
8
7
0
2
4
6
8
10
LOCAL OSCILLATOR POWER (dBm)
12
Figure 9. Typical Conversion Loss versus L.O. Drive,
2.0 GHz
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3
25
30
Figure 8. Typical Output Voltage versus Input
Power, Large Signal Detector Operating at 915 MHz
12
6
−2
20
NSR15ADXV6T1, NSR15ADXV6T5
PACKAGE DIMENSIONS
SOT−563−6
CASE 463A−01
ISSUE C
A
−X−
6
5
1
2
C
K
4
B
−Y−
3
D
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
S
J
5 PL
6
0.08 (0.003)
DIM
A
B
C
D
G
J
K
S
M
X Y
MILLIMETERS
MIN
MAX
1.50
1.70
1.10
1.30
0.50
0.60
0.17
0.27
0.50 BSC
0.08
0.18
0.10
0.30
1.50
1.70
INCHES
MIN
MAX
0.059 0.067
0.043 0.051
0.020 0.024
0.007 0.011
0.020 BSC
0.003 0.007
0.004 0.012
0.059 0.067
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm inches
SOT−563
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
For additional information, please contact your
local Sales Representative.
NSR15ADXV6T1/D
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