EMT2DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating • Low VCE(SAT), < 0.5 V http://onsemi.com (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 V Collector −Base Voltage VCBO −50 V Emitter −Base Voltage VEBO −6.0 V IC −100 mAdc Collector Current − Continuous Q2 Q1 (4) (5) THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation MARKING DIAGRAM Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient RJA Characteristic (Both Junctions Heated) Total Device Dissipation mW/°C °C/W 350 (Note 1) 6 54 3M D 3 12 SOT−563 CASE 463A Style 2 3M = Specific Device Code D = Date Code Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW TA = 25°C Derate above 25°C mW/°C RJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C EMT2DXV6T5 Package Shipping† SOT−563 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR−4 @ Minimum Pad. Semiconductor Components Industries, LLC, 2004 ORDERING INFORMATION Device Thermal Resistance, Junction-to-Ambient April, 2004 − Rev. 0 (6) 1 Publication Order Number: EMT2DXV6T5/D EMT2DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = −50 Adc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 Adc, IE = 0) V(BR)EBO −6.0 − − Vdc Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO − − −0.5 nA Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) IEBO − − −0.5 A − − −0.5 120 − 560 − 140 − − 3.5 − Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) Vdc hFE Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) − fT Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz) COB 2. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. http://onsemi.com 2 MHz pF EMT2DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS 1000 120 VCE , COLLECTOR-EMITTER VOLTAGE (V) 300 A 250 200 60 150 IB = 50 A 0 3 6 12 9 10 0.1 15 1 10 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 1. IC − VCE Figure 2. DC Current Gain 2 900 TA = 25°C 800 1.5 1 0.5 700 600 500 400 300 TA = 25°C VCE = 5 V 200 100 0 0.01 0.1 1 10 0 0.2 100 1 5 10 20 40 60 80 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. On Voltage 13 14 12 12 11 10 9 8 7 6 0.5 IB, BASE CURRENT (mA) Cob, CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) TA = − 25°C 100 100 30 0 DC CURRENT GAIN 90 VCE = 10 V TA = 25°C TA = 75°C COLLECTOR VOLTAGE (mV) IC, COLLECTOR CURRENT (mA) TA = 25°C 100 150 200 10 8 6 4 2 0 1 2 3 0 4 0 VEB (V) 10 20 VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 30 40 EMT2DXV6T5 PACKAGE DIMENSIONS SOT−563, 6−LEAD CASE 463A−01 ISSUE D A −X− 5 6 1 2 C K 4 B −Y− 3 D G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. J 5 PL 6 0.08 (0.003) DIM A B C D G J K S S M X Y MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 STYLE 2: PIN 1. EMITTER 1 2. EMITTER 2 3. BASE 2 4. COLLECTOR 2 5. BASE 1 6. COLLECTOR 1 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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