Sensitive Gate Triacs

NYT6-5D6DTG,
NYT6-5D6DT4G
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
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TRIACS
6.0 AMPERES RMS
600 VOLTS
Features
•
•
•
•
•
•
•
Passivated Die for Reliability and Uniformity
Four−Quadrant Triggering
Blocking Voltage to 600 V
On−State Current Rating of 6.0 A RMS at 93°C
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
These are Pb−Free Devices
MT2
MT1
G
MARKING
DIAGRAMS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
VDRM,
VRRM
600
V
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 85°C)
IT(RMS)
6.0
A
ITSM
60
A
I2t
6.6
A2sec
PGM
2.0
W
PG(AV)
1.0
W
Peak Gate Current
(Pulse Width ≤ 20 sec, TC = 93°C)
IGM
4.0
A
Peak Gate Voltage
(Pulse Width ≤ 20 sec, TC = 93°C)
VGM
5.0
V
TJ
−40 to 110
°C
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJinitial = 25°C)
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width ≤ 10 sec, TC = 93°C)
Average Gate Power
(t = 8.3 msec, TC = 93°C)
Operating Junction Temperature Range
Storage Temperature Range
Tstg
4
1 2
−40 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
3
DPAK
CASE 369C
STYLE 6
YWW
NYT
6−5D6G
4
1
IPAK
CASE 369D
STYLE 6
2
YWW
NYT
6−5D6G
3
Y
=
WW
=
NYT6−5D6 =
G
=
Year
Work Week
Device Code
Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 2
1
Publication Order Number:
NYT6−5D6D/D
NYT6−5D6DTG, NYT6−5D6DT4G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, − Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
Max
Unit
RJC
RJA
RJA
3.5
88
80
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
IDRM,
IRRM
−
−
−
−
0.001
0.5
mA
Forward On−State Voltage (ITM = ±8.5 A)
VTM
−
−
1.6
V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 )
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
IGT
−
−
−
−
−
−
−
−
5.0
5.0
5.0
10
Gate Trigger Voltage (VD = 12 V, RL = 30 )
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VGT
−
−
−
−
−
−
−
−
1.3
1.3
1.3
1.3
Gate Non−Trigger Voltage (Continuous dc) − (VD = 12 V, RL = 30 , TJ = 110°C)
All Four Quadrants
VGD
0.2
0.4
−
V
Holding Current (VD = 12 V, Initiating Current = ±100 mA)
IH
−
−
20
mA
Latching Current (VD = 12 V, IG = 60 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
IL
−
−
−
−
−
−
−
30
30
30
30
−
1.5
−
60
−
−
−
−
50
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
mA
V
mA
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/sec, TJ = 110°C, f = 250 Hz,
CL = 5.0 fd, LL = 80 mH, RS = 56 , CS = 0.03 fd) With snubber
di/dt(c)
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C)
dv/dt
Critical Rate of Rise of On−State Current
(TJ = 110°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
dI/dt
A/ms
V/s
A/s
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
ORDERING INFORMATION
Package Type
Package
Shipping†
NYT6−5D6DTG
IPAK
(Pb−Free)
369D
75 Units / Rail
NYT6−5D6DT4G
DPAK
(Pb−Free)
369C
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NYT6−5D6DTG, NYT6−5D6DT4G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Forward Off−State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off−State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On−State Voltage
IH
Holding Current
VTM
on state
IRRM at VRRM
IH
Quadrant 3
MainTerminal 2 −
IH
off state
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
(−) IGT
GATE
Quadrant I
(+) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
110
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
NYT6−5D6DTG, NYT6−5D6DT4G
= 30°
105
60°
90°
100
α
α
95
120°
= CONDUCTION ANGLE
180°
dc
90
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
5.0
α
α
120°
90°
4.0
= CONDUCTION ANGLE
3.0
2.0
60°
= 30°
1.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT(RMS), RMS ON−STATE CURRENT (A)
IT(RMS), RMS ON−STATE CURRENT (A)
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
10
TJ = 125°C
0.1
ZJC(t) = RJC(t)Sr(t)
0.01
1.0
10
100
1000
t, TIME (ms)
Figure 4. Transient Thermal Response
TJ = 25°C
0.1
0.01
TJ = −40°C
0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
4
Figure 3. Maximum On−State Voltage
Characteristics
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4
4.0
1.0
0.1
1
0.001
0
dc
180°
4.0
100
IT, INSTANTANEOUS ON−STATE CURRENT (A)
6.0
10 k
NYT6−5D6DTG, NYT6−5D6DT4G
0.9
VGT, GATE TRIGGER VOLTAGE (V)
IGT, GATE TRIGGER CURRENT (mA)
21
18
15
Q4
12
9
Q2 & Q3
6
Q1
3
0
−40 −20 −10
5
20
35
50
65
80
Q4
0.8
0.7
0.6
0.5
0.4
0.3
−40 −20 −10
95 110 125
TJ, JUNCTION TEMPERATURE (°C)
35
50
65
80
95 110 125
10
16
Q2
IH, HOLDING CURRENT (mA)
IL, LATCHING CURRENT (mA)
20
Figure 6. Typical Gate Trigger Voltage
18
14
12
10
Q3 & Q4
8
4
5
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current
6
Q1 & Q3
Q2
Q1
2
0
−40 −20 −10
5
20
35
50
65
80
8
MTI1 Negative
6
4
2
MTI1 Positive
0
−40 −20 −10
95 110 125
5
20
35
50
65
80
95 110 125
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Latching Current
Figure 8. Typical Holding Current
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5
NYT6−5D6DTG, NYT6−5D6DT4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
3.00
0.118
1.60
0.063
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NYT6−5D6DTG, NYT6−5D6DT4G
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
T
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NYT6−5D6D/D