NYE08-10B6ST1G Protected Triac Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. http://onsemi.com Features • • • • • PROTECTED TRIAC 0.8 AMPERE RMS 600 VOLTS Sensitive Gate Trigger Current in Two Quadrants Blocking Voltage to 600 V Surface Mount Package Compliant with IEC6100−4−5 These are Pb−Free Devices OUT COM G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, 50 to 60 Hz, Gate Open, TJ = 25 to 125°C) VDRM, VRRM 600 V On−State Current RMS (TC = 80°C) (Full Sine Wave 50 to 60 Hz) IT(RMS) 0.8 A ITSM 8.0 A I2t 0.4 A2s PGM 5.0 W PG(AV) 0.1 W Non−Repetitive Line Peak Voltage (IEC6100−4−5) VPP 2.0 kV Critical Rate of Rise of All−State Current (IG = 2 x IGT, tr < 100 ms, TJ = 1255C) di/dt Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Peak Non−repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Considerations (Pulse Width = 8.3 ms) Peak Gate Power (TC = 80°C, Pulse Width v 1.0 ms) Average Gate Power (TC = 80°C, t = 8.3 ms) MARKING DIAGRAM AYW 08106G G SOT−223 CASE 318E 1 A Y W 08106 G = = = = = Assembly Location Year Work Week Device Code Pb−Free Package (Note: Microdot may be in either location) 100 A/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. PIN ASSIGNMENT 1 OUT 2 COM 3 Gate 4 COM ORDERING INFORMATION Device NYE08−10B6ST1G Package Shipping† SOT−223 (Pb−Free) 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 0 1 Publication Order Number: NYE08−10B6S/D NYE08−10B6ST1G THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 50 °C/W Thermal Resistance, Junction−to−Ambient RqJA 160 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM, IRRM − − − − 2.0 200 mA mA Peak On−State Voltage (ITM = "1.1 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%) VTM − − 1.3 V Gate Trigger Current (dc) (VD = 12 Vdc, RL = 30 W) OUT(+), G(−) OUT(−), G(−) IGT OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = VDRM/VRRM; Gate Open) TJ = 25°C TJ = +125°C ON CHARACTERISTICS Latching Current (VD = 12 V, IG = 1.2 x IGT) OUT(+), G(−) All Types OUT(−), G(−) All Types IL mA 0.15 0.15 − − 10 10 − − − − 30 30 mA Gate Trigger Voltage (dc) (VD = 12 Vdc, RL = 30 W) VGT − − 1.0 V Gate Non−Trigger Voltage (VD = 12 V, RL = 30 W, TJ = 125°C) Quadrants 2, 3 VGD 0.15 − − V Dynamic Resistance RD − − 300 mW Holding Current (VD = 12 Vdc, Initiating Current = 50 mA, Gate Open) IH − − 25 mA di/dt(c) 0.3 − − A/ms 500 − − 650 − − DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (Commutating dv/dt = 15 V/ms, Gate Open, TJ = 125°C, f = 250 Hz, without Snubber) Critical Rate of Rise of Off−State Voltage (VD = 67% VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt Clamping Voltage (ICL = 1.0 mA, tp = 1 ms, TJ = 125°C) VCL http://onsemi.com 2 V/ms V NYE08−10B6ST1G Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IRRM at VRRM IH Quadrant 3 OUT− IH off state VTM Quadrant Definitions for a Triac OUT POSITIVE (Positive Half Cycle) + (+) OUT Quadrant II (+) OUT (−) IGT GATE Quadrant I (+) IGT GATE COM COM REF REF IGT − + IGT (−) OUT Quadrant III (−) OUT Quadrant IV (+) IGT GATE (−) IGT GATE COM COM REF REF − OUT NEGATIVE (Negative Half Cycle) All polarities are referenced to COM. http://onsemi.com 3 Quadrant 1 OUT+ + Voltage IDRM at VDRM NYE08−10B6ST1G 100 IGT, GATE TRIGGER CURRENT (mA) 25 1 15 Q3 10 Q2 5 0 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 2. Typical Gate Trigger Current TJ = 125°C 1 VGT, GATE TRIGGER VOLTAGE (V) IT, INSTANTANEOUS ON−STATE CURRENT (A) 10 20 0.1 TJ = 25°C 0.01 0.8 1.3 Q3 0.8 0.7 0.6 Q2 0.5 0.4 0.3 0.2 0.1 0 −40 −25 −10 TJ = −40°C 0.001 0.3 0.9 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) 1.8 2.3 2.8 3.3 Figure 3. Typical Gate Trigger Voltage 3.8 VT, INSTANTANEOUS ON-STATE VOLTAGE (V) 60 35 50 30 IH, HOLDING CURRENT (mA) IL, LATCHING CURRENT (mA) Figure 1. Maximum On−State Voltage Characteristics 40 Q3 30 20 10 Q2 0 −40 −25 −10 5 20 35 50 65 80 95 110 125 25 MTI1 Negative 20 15 10 5 MTI1 Positive 0 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 4. Typical Latching Current Figure 5. Typical Holding Current http://onsemi.com 4 NYE08−10B6ST1G 0.15 3.8 0.079 2.0 0.091 2.3 0.091 2.3 0.244 6.2 0.079 2.0 0.984 25.0 0.059 1.5 0.096 2.44 0.059 1.5 0.059 1.5 0.096 2.44 0.059 1.5 inches mm BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 2.44 0.059 1.5 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 http://onsemi.com 5 NYE08−10B6ST1G PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E q L MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° L1 SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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