NYE08-10B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO−92 package which is readily adaptable for use in automatic insertion equipment. http://onsemi.com Features • • • • • • • PROTECTED TRIAC 0.8 AMPERE RMS 600 VOLTS One−Piece, Injection−Molded Package Blocking Voltage to 600 V Sensitive Gate Triggering in Two Trigger Modes (Quadrants) Improved Noise Immunity (dv/dt Minimum of 500 V/msec at 125°C) Compliant with IEC6100−4−5 High Surge Current of 8 A These are Pb−Free Devices OUT COM G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, 50 to 60 Hz, Gate Open, TJ = 25 to 125°C) VDRM, VRRM 600 V On−State Current RMS (TC = 80°C) (Full Sine Wave 50 to 60 Hz) IT(RMS) 0.8 A ITSM 8.0 A I2t 0.4 A2s PGM 5.0 W PG(AV) 0.1 W Non−Repetitive Line Peak Voltage (IEC6100−4−5) VPP 2.0 kV Critical Rate of Rise of All−State Current (IG = 2 x IGT, tr < 100 ms, TJ = 125°C) di/dt 100 A/ms Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Peak Non−repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Considerations (Pulse Width = 8.3 ms) Peak Gate Power (TC = 80°C, Pulse Width v 1.0 ms) Average Gate Power (TC = 80°C, t = 8.3 ms) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 12 1 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 (TO−226AA) CASE 029−11 MARKING DIAGRAM E08 10B6 YWW G G 1 2 3 x = 3,7,9 Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 OUT 2 Gate 3 COM ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2012 November, 2012− Rev. 0 1 Publication Order Number: NYE08−10B6/D NYE08−10B6TG THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure TBD Characteristic RqJA 156 °C/W Thermal Resistance, Junction−to−Tab Measured on OUT Tab Adjacent to Epoxy RqJT 25 °C/W TL 260 °C Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM, IRRM − − − − 2.0 200 mA mA Peak On−State Voltage (ITM = "1.1 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%) VTM − − 1.3 V Gate Trigger Current (dc) (VD = 12 Vdc, RL = 30 W) OUT(+), G(−) OUT(−), G(−) IGT OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM/VRRM; Gate Open) TJ = 25°C TJ = +125°C ON CHARACTERISTICS Latching Current (VD = 12 V, IG = 1.2 x IGT) OUT(+), G(−) All Types OUT(−), G(−) All Types IL mA 0.15 0.15 − − 10 10 − − − − 30 30 mA Gate Trigger Voltage (dc) (VD = 12 Vdc, RL = 30 W) VGT − − 1.0 V Gate Non−Trigger Voltage (VD = 12 V, RL = 30 W, TJ = 125°C) Quadrants 2, 3 VGD 0.15 − − V Dynamic Resistance RD − − 300 mW Holding Current (VD = 12 Vdc, Initiating Current = 50 mA, Gate Open) IH − − 25 mA di/dt(c) 0.3 − − A/ms 500 − − 650 − − DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (Commutating dv/dt = 15 V/ms, Gate Open, TJ = 125°C, f = 250 Hz, without Snubber) Critical Rate of Rise of Off−State Voltage (VD = 67% VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt Clamping Voltage (ICL = 1.0 mA, tp = 1 ms, TJ = 125°C) VCL http://onsemi.com 2 V/ms V NYE08−10B6TG Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM on state IRRM at VRRM IH Quadrant 3 OUT− IH off state VTM Quadrant Definitions for a Triac OUT POSITIVE (Positive Half Cycle) + (+) OUT Quadrant II (+) OUT (−) IGT GATE Quadrant I (+) IGT GATE COM COM REF REF IGT − + IGT (−) OUT (−) OUT Quadrant III Quadrant IV (+) IGT GATE (−) IGT GATE COM COM REF REF − OUT NEGATIVE (Negative Half Cycle) All polarities are referenced to COM. http://onsemi.com 3 Quadrant 1 OUT+ + Voltage IDRM at VDRM NYE08−10B6TG IGT, GATE TRIGGER CURRENT (mA) 100 1 20 15 Q3 10 Q2 5 0 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 2. Typical Gate Trigger Current TJ = 125°C 1 VGT, GATE TRIGGER VOLTAGE (V) IT, INSTANTANEOUS ON−STATE CURRENT (A) 10 25 0.1 TJ = 25°C 0.01 0.8 1.3 Q3 0.8 0.7 0.6 Q2 0.5 0.4 0.3 0.2 0.1 0 −40 −25 −10 TJ = −40°C 0.001 0.3 0.9 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) 1.8 2.3 2.8 3.3 Figure 3. Typical Gate Trigger Voltage 3.8 VT, INSTANTANEOUS ON-STATE VOLTAGE (V) 60 35 50 30 IH, HOLDING CURRENT (mA) IL, LATCHING CURRENT (mA) Figure 1. Maximum On−State Voltage Characteristics 40 Q3 30 20 10 Q2 0 −40 −25 −10 5 20 35 50 65 80 95 110 125 25 MTI1 Negative 20 15 10 5 MTI1 Positive 0 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 4. Typical Latching Current Figure 5. Typical Holding Current http://onsemi.com 4 NYE08−10B6TG TO−92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL H2A H2A H2B H2B H W2 H4 H5 T1 L1 H1 W1 W L T T2 F1 F2 P2 D P2 P1 P Figure 6. Device Positioning on Tape Specification Inches Symbol Min Max Min Max D Tape Feedhole Diameter 0.1496 0.1653 3.8 4.2 D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51 Component Lead Pitch 0.0945 0.110 2.4 2.8 F1, F2 2. 3. 4. 5. 6. 7. 8. 9. Item Millimeter H Bottom of Component to Seating Plane 0.059 0.156 1.5 4.0 H1 Feedhole Location 0.3346 0.3741 8.5 9.5 H2A Deflection Left or Right 0 0.039 0 1.0 H2B Deflection Front or Rear 0 0.051 0 1.0 H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5 H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5 L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11 L1 Lead Wire Enclosure 0.09842 − 2.5 − P Feedhole Pitch 0.4921 0.5079 12.5 12.9 P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75 P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95 0.06 0.08 0.15 0.20 T Adhesive Tape Thickness T1 Overall Taped Package Thickness − 0.0567 − 1.44 T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65 W Carrier Strip Width 0.6889 0.7481 17.5 19 W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3 W2 Adhesive Tape Position .0059 0.01968 0.15 0.5 Maximum alignment deviation between leads not to be greater than 0.2 mm. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. Component lead to tape adhesion must meet the pull test requirements. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. No more than 1 consecutive missing component is permitted. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. Splices will not interfere with the sprocket feed holes. http://onsemi.com 5 NYE08−10B6TG ORDERING & SHIPPING INFORMATION: Packaging Options, Device Suffix Device Europe Equivalent Description of TO−92 Tape Orientation Package Shipping Flat side of TO−92 and adhesive tape visible TO−92 (Pb−Free) Radial 2000 / Tape and Reel NYE08−10B6TG N/A, Bulk TO−92 (Pb−Free) 5000 Units / Box NYE08−10B6RLRPG Round side of TO−92 and adhesive tape visible TO−92 (Pb−Free) Radial Tape and Fan Fold Box (2000 Units / Box) NYE08−10B6RLRFG Round side of TO−92 and adhesive tape on reverse side TO−92 (Pb−Free) Radial Tape and Fan Fold Box (2000 Units / Box) U.S. NYE08−10B6RL1G http://onsemi.com 6 NYE08−10B6TG PACKAGE DIMENSIONS TO−92 (TO−226AA) CASE 029−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NYE08−10B6/D