BY228/13.BY228/15 Vishay Telefunken Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package Applications High voltage rectifier Efficiency diode in horizontal deflection circuits High voltage rectifier Efficiency diode in horizontal deflection circuits 94 9588 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, g non repetitive Test Conditions Reverse voltage g Peak forward surge current Type BY228/13 BY228/15 BY228/13 BY228/15 tp=10ms, half sinewave Average forward current Junction temperature Storage temperature range Symbol VRSM VRSM VR VR IFSM Value 1300 1500 1000 1200 50 Unit V V V V A IFAV Tj Tstg 3 140 –55...+150 A °C °C Symbol RthJA Value 70 Unit K/W Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board with spacing 37.5mm Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Total reverse recovery time Document Number 86004 Rev. 2, 24-Jun-98 Test Conditions IF=5A VR=1000V VR=1200V VR=1000V, Tj=140°C VR=1200V, Tj=140°C IF=1A, –diF/dt=0.05A/ms Type BY228/13 BY228/15 BY228/13 BY228/15 Symbol VF IR IR IR IR trr Min Typ 2 2 Max Unit 1.5 5 5 140 140 20 V mA mA mA mA ms www.vishay.de • FaxBack +1-408-970-5600 1 (3) BY228/13.BY228/15 Vishay Telefunken R thJA – Therm. Resist. Junction / Ambient ( K/W ) Characteristics (Tj = 25_C unless otherwise specified) 100 30 20 l l 10 TL=constant 0 0 5 10 15 20 25 10 Scattering Limit 1 0.1 0.01 30 l – Lead Length ( mm ) 94 9081 Tj = 25°C IF – Forward Current ( A ) 40 0 94 9083 Figure 1. Typ. Thermal Resistance vs. Lead Length 0.6 1.2 1.8 2.4 3.0 VF – Forward Voltage ( V ) Figure 3. Forward Current vs. Forward Voltage I R – Reverse Current ( mA ) 1000 Scattering Limit 100 10 1 VR = VR RM 0.1 0 94 9082 40 80 120 160 200 Tj – Junction Temperature ( °C ) Figure 2. Reverse Current vs. Junction Temperature Dimensions in mm Sintered Glass Case SOD 64 Weight max. 1.0 g Cathode Identification ∅ 4.3 max. technical drawings according to DIN specifications ∅ 1.35 max. 26 min. www.vishay.de • FaxBack +1-408-970-5600 2 (3) 4.2 max. 26 min. 94 9587 Document Number 86004 Rev. 2, 24-Jun-98 BY228/13.BY228/15 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 86004 Rev. 2, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 3 (3)