REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A The device type on this drawing have been changed to reflect the part numbers on SMD 5962-00B03. New device types 01 and 02 have been added to 1.2.2. - phn 03-12-04 Thomas M. Hess B Add device type 06. Add case outline T and M. Changed supply voltage VDD in absolute maximum rating in 1.3 from 6.0 V to 7.0 V. phn 05-04-12 Thomas M. Hess C Add case outline N and 4. - phn 06-02-06 Thomas M. Hess D Add case outline 5. Update the boilerplate to the current requirements of MIL-PRF-38535. - phn 08-06-18 Thomas M. Hess REV SHEET REV D D D D D D D SHEET 15 16 17 18 19 20 21 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY STANDARD MICROCIRCUIT DRAWING Phu H. Nguyen DEFENSE SUPPLY CENTER COLUMBUS CHECKED BY COLUMBUS, OHIO 43218-3990 http://www.dscc.dla.mil Phu H. Nguyen APPROVED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE Thomas M. Hess DRAWING APPROVAL DATE MICROCIRCUIT, DIGITAL, CMOS, MG2RTP, GATE ARRAY, MONOLITHIC SILICON 03-11-04 AMSC N/A REVISION LEVEL D DSCC FORM 2233 APR 97 SIZE CAGE CODE A 67268 SHEET 1 OF 5962-03B01 21 5962-E436-08 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - Federal stock class designator \ RHA designator (see 1.2.1) 03B01 01 Q X C Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 01 02 03 04 05 06 MG2RTPL_M01 MG2RTPL_MB02 MG2044P MG2142P MG2270P MG2256A Circuit function 202 gates available 1/ 2,799 gates available 1/ 44,000 gates available 142,000 gates available 270,000 gates available FPGA conversion 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class M Q or V Device requirements documentation Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Certification and qualification to MIL-PRF-38535 _____ 1/ This device is no longer available. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 2 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter 2/ X Y Z U T M N 4 5 Descriptive designator See figure 1 See figure 1 See figure 1 See figure 1 See figure 1 See figure 1 See figure 1 See figure 1 See figure 1 Terminals Package style 100 132 160 349 256 208 256 208 132 Leads unformed quad flat pack Leads unformed quad flat pack Leads unformed quad flat pack Multilayer ceramic grid array Leads unformed quad flat pack Leads unformed quad flat pack Leads unformed quad flat pack – grounded lid Leads unformed quad flat pack – grounded lid Leads unformed quad flat pack – grounded lid 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings 3/ 4/ Supply voltage range (VDD)................................................................ Input voltage range (VIN).................................................................... Input current (IIN) Signal pin .................................................................................. Power pin .................................................................................. Output short circuit current 6/ VOUT = VDD ................................................................................ VOUT = VSS ................................................................................. Lead temperature (soldering, 10 sec) ............................................... Storage temperature.......................................................................... Maximum junction temperature (TJ) .................................................. -0.5 V to 7.0 V -0.5 V to VDD + 0.5 V 5/ -10 mA to 10 mA -50 mA to 50 mA 48 mA -36 mA 300°C 7/ -65°C to 150°C 175°C 1.4 Recommended operating conditions. Supply voltage range ......................................................................... 2.7 V to 5.5 V 8/ Case operating temperature range (TC) ............................................ -55°C to 125°C 1.5 Digital logic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012)................................. As specified in the AID 1.6 Radiation features. Maximum total dose available (dose rate = 0.1 rad(Si)/s) ................. 100 Krads 9/ __________ 2/ 3/ 4/ 5/ 6/ 7/ 8/ 9/ Additional packages are available on SMD 5962-00B03 Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. All voltages referenced to Ground unless otherwise specified. VDD + 0.5 V shall not exceed 7.0 V. The maximum output current of any single output in short condition for a maximum duration of 1 second. Duration 10 s max at a distance not less than 1.6 mm. This gate array device is capable of being configured with VDD = 3.0 V ±10% or VDD = 5.0 V ±10%. Unless otherwise specified in the AID. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 3 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://assist.daps.dla.mil;quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http://www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.3 AID requirements. All AIDs written against this SMD shall be sent to DSCC-VA. The following items shall be provided to the device manufacturer by the customer as part of an AID. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 4 3.3.1 Terminal connections and pin assignments. 3.3.2 Package type (see 1.2.4). 3.3.3 Functional block diagram (or equivalent VHDL behavioral description). 3.3.4 Functional description terms and symbols. 3.3.5 Logic diagram (or equivalent structural VHDL description or mutually agreed to net list). 3.3.6 Pin function description. 3.3.7 Design tape # or Design document name (i.e., net list). 3.3.8 Design functional tape # or name. 3.3.9 Test functional tape # or name. 3.3.10 Timing diagram(s). 3.3.11 Fault coverage measurement of manufacturing logic tests. 3.3.12 Burn-in circuit. 3.3.13 Radiation exposure circuit. 3.3.14 ESD class and voltage. 3.3.15 Device electrical performance characteristics (additions to Table I). Device electrical performance characteristics shall include dc parametric, functional, ac parameters and any other data which would be considered required by a design engineer. All electrical performance characteristics apply over the full recommended ambient operating temperature range and specified test load conditions. 3.3.16 Maximum power dissipation. Maximum power dissipation shall be in accordance with the application specific design. 3.3.17 RHA post-irradiated electrical. For RHA devices supplied to this drawing, the RHA post irradiated electrical shall be specified in the AID. 3.4 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.5 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.6 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. The AID number shall be added to the marking by the manufacturer. 3.6.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 5 3.7 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.8 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.9 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.10 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.11 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 123 (see MIL-PRF-38535, appendix A). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 6 TABLE I. Electrical performance characteristics. Conditions -55°C ≤ TC ≤ +125°C Group A subgroups Device type Min Max IOH = -300 μA 1, 2, 3 All - 1.2 -0.2 V IIL VIN = GND, VDD = 5.5 V 1, 2, 3 All -5 - μA IILPU VIN = GND, VDD = 5.5V 1, 2, 3 All - 100 - μA ILLPD VIN = GND, VDD = 5.5 V 1, 2, 3 All -5 - μA IIH VIN = VDD = 5.5 V 1, 2, 3 All - 5 μA IIHPU VIN = VDD = 5.5 V 1, 2, 3 All - 5 μA IIHPD VIN = VDD = 5.5 V 1, 2, 3 All - 300 μA IOZL Outputs disabled, VOUT = GND 1, 2, 3 All -5 - μA Output leakage high current Pulldown output 2/ IOZHPD Outputs disabled, VOUT = VDD 1, 2, 3 All - 300 μA Output leakage low current IOZLPU Outputs disabled, VOUT = GND 1, 2, 3 All - 100 - μA Outputs disabled, VOUT = VDD 1, 2, 3 All - 5 μA Functional verification 1, 2, 3 All - 0.8 V 1, 2, 3 All - 0.4 V Test Input clamp voltage to GND 1/ Low level input current 2/ Low level input current, Symbol VIC VDD = 5 V ± 10 % unless otherwise specified Limits Unit Pull-up 2/ Low level input current, Pull-down 2/ High level input current 2/ High level input current, Pull-up 2/ High level input current, Pull-down 2/ Output leakage low current 2/ Pull-up output 2/ Output leakage high current 2/ Low Level Input Voltage 1/ IOZH VIL Low level output voltage BOUT12 2/ VOL1 VDD = 5.5 V, IOL = +12 mA Low level output voltage BOUT6 2/ VOL2 VDD = 5.5 V, IOL = +6 mA 1, 2, 3 All - 0.4 V Low level output Voltage BOUT3 2/ VOL3 VDD = 5.5 V, IOL = +3 mA 1, 2, 3 All - 0.4 V High Level Output Voltage BOUT12 2/ VOH1 VDD = 4.5 V, IOH = -12 mA 1, 2, 3 All 3.9 - V High level output voltage BOUT6 2/ VOH2 VDD = 4.5 V, IOH = -6 mA 1, 2, 3 All 3.9 - V High level output voltage BOUT3 2/ VOH1 VDD = 4.5 V, IOH = -3 mA 1, 2, 3 All 3.9 - V 1, 2, 3 All 2.2 - V High level input voltage 1/ VIH Functional verification Input capacitance 3/ CI VDD = 0 V 4 All 15 pF Output capacitance 3/ CIO VDD = 0 V 4 All 15 pF See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 7 TABLE I. Electrical performance characteristics. – Continued. Conditions -55°C ≤ TC ≤ +125°C VDD = 2.7 V to 3.6 V unless otherwise specified Group A subgroups Device type Min Max IOH = -300 μA 1, 2, 3 All -1.2 -0.2 V IIL VIN = GND, VDD = 3.6 V 1, 2, 3 All -1 - μA IILPU VIN = GND, VDD = 3.6V 1, 2, 3 All - 50 - μA ILLPD VIN = GND, VDD = 3.6 V 1, 2, 3 All -1 - μA IIH VIN = VDD = 3.6 V 1, 2, 3 All - 1 μA IIHPU VIN = VDD = 3.6 V 1, 2, 3 All 1 μA IIHPD VIN = VDD = 3.6 V 1, 2, 3 All - 140 μA IOZL Outputs disabled, VOUT = GND 1, 2, 3 All -1 - μA Output leakage high current Pulldown output 2/ IOZHPD Outputs disabled, VOUT = VDD 1, 2, 3 All - 140 μA Output leakage low current Pull-up output 2/ IOZLPU Outputs disabled, VOUT = GND 1, 2, 3 All - 50 - μA Output leakage high current 2/ IOZH Outputs disabled, VOUT = VDD 1, 2, 3 All - 1 μA Low level input voltage LVTTL input 1/ VIL Functional verification 1, 2, 3 All - 0.8 V VDD = 3.6 V 1, 2, 3 All - 0.4 V Test Input clamp voltage to GND 1/ Low level input current 2/ Low level input current, Symbol VIC Limits Unit Pull-up 2/ Low level input current, Pull-down 2/ High level input current 2/ High level input current, Pull-up 2/ High level input current, Pull-down 2/ Output leakage low current 2/ Low level output voltage BOUT12 2/ VOL1 Low level output voltage BOUT6 2/ VOL2 VDD = 3.6 V, IOL = +3 mA 1, 2, 3 All - 0.4 V Low level output voltage BOUT3 2/ VOL3 VDD = 3.6 V, IOL = +1.5 mA 1, 2, 3 All - 0.4 V High level output voltage BOUT12 2/ VOH1 VDD = 2.7 V, IOH = -4 mA 1, 2, 3 All 0.7 VDD - V High level output voltage BOUT6 3/ VOH2 VDD = 2.7 V, IOH = -2 mA 1, 2, 3 All 0.7 VDD - V High level output voltage BOUT3 3/ VOH3 VDD = 2.7 V, IOH = -1 mA 1, 2, 3 All 0.7 VDD - V VIH Functional verification 1, 2, 3 All 2.0 - V Input capacitance 3/ CI VDD = 0 V 4 All 15 pF Output capacitance 3/ CIO VDD = 0 V 4 All 15 pF High level input voltage LVTTL input 1/ IOL = +6 mA 1/ Forcing conditions of the functional test, assure that these limits are met, but they will not be individually recorded. 2/ Read and record measurements in accordance with MIL-PRF-38535. 3/ Tested at initial design and after major process changes, otherwise guaranteed. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 8 Case X 100 Lead unformed quad flat pack Millimeters Inches Min Max Min Max A 2.21 2.67 .087 .105 A1 1.83 2.24 .072 .088 A2 0.203 REF .008 REF b 0.254 REF .010 REF C 0.15 0.20 .006 .008 D/E 33.80 35.30 1.331 1.390 D1/E1 18.80 19.30 .740 e L 0.635 BSC 7.50 N1/N2 .760 .025 BSC 8.00 .295 25 .315 25 Figure 1. Case outlines STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 9 Case Y 132 Lead unformed quad flat pack Millimeters Inches Min Max Min Max A 2.36 2.82 .093 .111 A1 1.47 1.83 .058 .072 A2 0.203 REF .008 REF b 0.200 REF .008 REF C 0.152 TYP .006 TYP D/E 37.00 39.38 1.457 D1/E1 24.00 24.38 .945 e 0.635 BSC L 6.50 N1/N2 1.550 .960 .025 BSC 7.50 .256 33 .295 33 Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 10 Case Z 160 Lead unformed quad flat pack Millimeters Inches Min Max Min Max A 1.96 2.66 .077 .105 A1 1.70 2.10 .067 .083 A2 0.10 0.30 .004 .012 b 0.25 0.35 .010 .014 C 0.10 0.20 .004 .008 D/E 37.90 39.30 1.492 1.548 D1/E1 26.90 27.50 1.059 e 0.650 BSC L 5.50 N1/N2 1.083 .0256 BSC 5.90 .216 40 .232 40 Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 11 Case U 349 Multilayer ceramic grid array Millimeters Inches Min Max Min Max A 4.30 5.90 .169 .232 A1 1.40 1.85 .055 .073 A2 2.40 3.45 .094 .136 b 0.79 0.99 .031 .040 D/E 24.80 25.20 .976 .992 D1/E1 22.86 (1.27 x 18) 0.900 (.05 x 18) e 1.27 REF .050 REF Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 12 Case T 256 Leads unformed quad flat pack Millimeters Inches Millimeters Inches Min Max Min Max A 2.50 3.22 .090 .127 E1/D1 A1 2.06 2.56 .001 .101 E2/D2 31.50 BSC 1.240 BSC D3 65.90 BSC 2.594 BSC A2 b c 0.20 BSC 0.20 Typ 0.10 0.20 .008 BSC .008 Typ .004 .008 Min Max Min Max 35.64 36.36 1.403 1.431 E4 70.00 BSC 2.756 BSC E5 74.60 75.40 2.937 2.968 e 0.50 BSC .020 BSC J 0.77 1.03 .030 .040 L3 56.30 BSC 2.217 BSC F 7.05 8.45 .277 .332 K 0.25 .010 Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 13 Case M 208 Leads unformed quad flat pack Millimeters Min Max Inches Min Millimeters Max Inches Min Max Min Max 28.96 29.46 1.14 1.16 A 2.40 3.20 .095 .126 E1/D1 A1 2.06 2.56 .001 .101 E2/D2 25.50 BSC 1.004 BSC 2.594 BSC A2 0.20 BSC .008 BSC D3 65.90 BSC b 0.20 Typ .008 Typ E4 70.00 BSC c 0.10 0.20 .004 .008 2.756 BSC E5 74.60 75.40 2.937 2.968 e 0.50 BSC .020 BSC J 0.76 1.02 .030 .040 L3 56.30 BSC 2.217 BSC F 7.05 8.45 .277 .332 K 0.25 .010 Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 14 Case N 256 Leads unformed quad flat pack – grounded lid Millimeters Inches Millimeters Max Min A 2.50 3.22 .090 .127 E1/D1 A1 2.06 2.56 .001 .101 E2/D2 31.50 BSC 1.240 BSC D3 65.90 BSC 2.594 BSC A2 b c 0.20 BSC 0.20 Typ 0.10 0.20 Max Inches Min .008 BSC .008 Typ .004 Min Max Min Max 35.64 36.36 1.403 1.431 E4 .008 70.00 BSC 2.756 BSC E5 74.60 75.40 2.937 2.968 e 0.50 BSC .020 BSC J 0.77 1.03 .030 .040 L3 56.30 BSC 2.217 BSC F 7.05 8.45 .277 .332 K 0.25 .010 Figure 1. Case outline – Continued. Millimeters Inches Millimeters Inches Min Max Min Max A 2.50 3.22 .090 .127 E1/D1 A1 2.06 2.56 .001 .101 E2/D2 31.50 BSC 1.240 BSC D3 65.90 BSC 2.594 BSC A2 b c 0.20 BSC 0.20 Typ 0.10 0.20 .008 BSC .008 Typ .004 .008 Min Max Min Max 35.64 36.36 1.403 1.431 E4 70.00 BSC 2.756 BSC E5 74.60 75.40 2.937 2.968 e 0.50 BSC .020 BSC J 0.77 1.03 .030 .040 L3 56.30 BSC 2.217 BSC F 7.05 8.45 .277 .332 K 0.25 .010 Note: 1. Reference mark indicates the lid is connected to ground. Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 15 Case 4 208 Leads unformed quad flat pack – grounded lid Figure 1. Case outline – Continued. Millimeters Min Max Inches Min Millimeters Max Inches Min Max Min Max 28.96 29.46 1.14 1.16 A 2.40 3.20 .095 .126 E1/D1 A1 2.06 2.56 .001 .101 E2/D2 25.50 BSC 1.004 BSC A2 0.20 BSC .008 BSC D3 65.90 BSC 2.594 BSC b 0.20 Typ .008 Typ E4 70.00 BSC 2.756 BSC c 0.10 0.20 .004 .008 e 0.50 BSC .020 BSC L3 56.30 BSC 2.217 BSC E5 74.60 75.40 2.937 2.968 J 0.76 1.02 .030 .040 F 7.05 8.45 .277 .332 K 0.25 .010 Note: 1. Reference mark indicates the lid is connected to ground. Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 16 Case 5 132 Leads unformed quad flat pack – grounded lid Millimeters Inches Min Max Min Max A 2.36 2.82 .093 .111 A1 1.47 1.83 .058 0.072 A2 0.203 REF .008 REF b 0.200 REF .008 REF C 0.152 TYP .006 TYP D/E 37.00 39.38 1.457 1.550 D1/E1 24.00 24.38 .945 .960 e 0.635 BSC L 6.50 N1/N2 .025 BSC 7.50 .256 33 .295 33 Note: 1. Pin 100 is used to connect the lid to VSS. Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 17 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition is described in the AID. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) TA = +125°C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MILPRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 18 TABLE II. Electrical test requirements. Test requirements Subgroups Subgroups (in accordance with MIL-STD-883, method 5005, table I) (in accordance with MIL-PRF-38535, table III) Device Device Device class M class Q class V 1, 7, 9 1, 7, 9 1, 7, 9 Interim electrical parameters (see 4.2) Final electrical 1, 2, 3, 7, 8, 9, 10, 11 1/ 1, 2, 3, 7, 8, 9, 10, 11 1/ 1, 2, 3, 7, 8, 9, 10, 11 2/ 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 Group D end-point electrical 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9 parameters (see 4.4) Group E end-point electrical parameters (see 4.4) 1/ PDA applies to subgroup 1. 2/ PDA applies to subgroups 1 and 7. 4.4.1 Group A inspection. a. Tests shall be as specified in table II herein. b. For device class Q and V, subgroups 7 and 8 tests shall be sufficient to verify the functionality of the device as described in the AID. These tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein) or as described in the manufacturers QM plan. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition as described in the AID. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. b. TA = +125°C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MILSTD-883. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 19 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table II herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in table II herein. c. When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883, method 1019, condition A unless otherwise specified in the AID. 4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level greater than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall be the pre-irradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.4.4.2 Dose rate induced latch-up testing. When required by the customer, dose rate induced latch-up testing shall be performed in accordance with method 1020 of MIL-STD-883 and as specified herein. Tests shall be performed on devices, SEC, or approved test structures at technology qualification and after any design or process changes which may affect the RHA capability of the process. 4.4.4.3 Dose rate upset testing. When required by the customer, dose rate upset testing shall be performed in accordance with method 1021 of MIL-STD-883 and herein. a. Transient dose rate upset testing for class M devices shall be performed at initial qualification and after any design or process changes which may affect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified. b. Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved radiation hardness assurance plan and MIL-PRF-38535. Device parametric parameters that influence upset immunity shall be monitored at the wafer level in accordance with the wafer level hardness assurance plan and MIL-PRF-38535. 4.4.4.4 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be performed on class V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. Test four devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP testing. The test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the die surface and 60° to the normal, inclusive (i.e. 0° ≤ angle ≤ 60°). No shadowing of the ion beam due to fixturing or package related effects is allowed. b. The fluence shall be ≥ 100 errors or ≥ 107 ions/cm2. c. The flux shall be between 102 and 105 ions/cm2/s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be ≥ 20 microns in silicon. e. The upset test temperature shall be +25°C. The latchup test temperature shall be at the maximum rated operating temperature ±10°C. f. Bias conditions shall be defined by the manufacturer for latchup measurements. g. For SEP test limits, see table IB herein. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 20 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019 condition “B” unless otherwise specified in the AID. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. 6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone (614) 692-0547. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-03B01 A REVISION LEVEL D SHEET 21 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 08-06-18 Approved sources of supply for SMD 5962-03B01 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. Standard Vendor Vendor microcircuit drawing PIN 1/ CAGE number Similar PIN 2/ 3/ 5962-03B0101QXC 4/ MMKU-MG2RTPL_M01HxxxMQ 5962-03B0102QXC 4/ MMKU-MG2RTPL_MB02HxxxMQ 5962-03B0103QXC F7400 MMKU-MG2044PHxxxMQ 5962-03B0103VXC F7400 SMKU-MG2044PHxxxSV 5962R03B0103VXC F7400 SMKU-MG2044PHxxxSR 5962-03B0103QYC F7400 MMKN-MG2044PHxxxMQ 5962-03B0103VYC F7400 SMKN-MG2044PHxxxSV 5962R03B0103VYC F7400 SMKN-MG2044PHxxxSR 5962-03B0103QZC F7400 MMKW-G2044PHxxxMQ 5962-03B0103VZC F7400 SMKW-G2044PHxxxSV 5/ 5962R03B0103VZC F7400 SMKW-G2044PHxxxSR 5/ 5962-03B0103Q5C F7400 MMKC-G2044PHxxxMQ 5/ 5962-03B0103V5C F7400 SMKC-G2044PHxxxSV 5/ 5962R03B0103V5C F7400 SMKC-G2044PHxxxSR 5/ 5962-03B0104QYC F7400 MMKN-G2142PHxxxMQ 5962-03B0104VYC F7400 SMKN-G2142PHxxxSV 5/ 5962R03B0104VYC F7400 SMKN-G2142PHxxxSR 5/ 5962-03B0104QZC F7400 MMKW-G2142PHxxxMQ 5962-03B0104VZC F7400 SMKW-G2142PHxxxSV 5/ 5962R03B0104VZC F7400 SMKW-G2142PHxxxSR 5/ 5962-03B0105QYC F7400 MMKN-G2270PHxxxMQ 5/ 5962-03B0105VYC F7400 SMKN-G2270PHxxxSV 5/ 5962R03B0105VYC F7400 SMKN-G2270PHxxxSR 5/ 5962-03B0105QZC F7400 MMKW-G2270PHxxxMQ 5962-03B0105VZC F7400 SMKW-G2270PHxxxSV 5/ 5962R03B0105VZC F7400 SMKW-G2270PHxxxSR 5/ 5962-03B0105QUC 4/ MM2E-G2270PHxxxMQ 5962-03B0105VUC 4/ SM2E-G2270PHxxxSV 5962R03B0105VUC 4/ SM2E-G2270PHxxxSR 5/ 5/ 5/ 5/ 1/ 2/ 3/ 4/ 5/ Standard Vendor Vendor microcircuit drawing PIN 1/ CAGE number Similar PIN 2/ 3/ 5962-03B0106QTC F7400 MMYZ-G2256AHxxxMQ 5962-03B0106VTC F7400 SMYZ-G2256AHxxxSV 5962R03B0106VTC F7400 SMYZ-G2256AHxxxSR 5962-03B0106QMC F7400 MMYY-G2256AHxxxMQ 5962-03B0106VMC F7400 SMYY-G2256AHxxxSV 5962R03B0106VMC F7400 SMYY-G2256AHxxxSR 5962-03B0106QNC F7400 MMYE-G2256AHxxxMQ 5962-03B0106VNC F7400 SMYE-G2256AHxxxSV 5962R03B0106VNC F7400 SMYE-G2256AHxxxSR 5962-03B0106Q4C F7400 MMYD-G2256AHxxxMQ 5962-03B0106V4C F7400 SMYD-G2256AHxxxSV 5962R03B0106V4C F7400 SMYD-G2256AHxxxSR The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. The “xxx” is reserved to indicate the customer specific code Due to the nature of this SMD, the standard microcircuit drawing PIN and corresponding vendor similar PIN shall be specified in the AID. Not available from an approved source of supply. Not available from an approved source of supply for new design. Vendor CAGE number F7400 Vendor name and address Atmel La Chantrerie 44306 Nantes Cedex3 France The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.