Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BGA2031/1
MMIC variable gain amplifier
Product specification
Supersedes data of 2000 Mar 02
2001 Feb 05
NXP Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
FEATURES
PINNING
 High gain
PIN
DESCRIPTION
 Excellent adjacent channel power rejection
1
RFin
 Small SMD package
2
CTRL
 Low dissipation.
3
VS1
4
VS2 + RFout
APPLICATIONS
5
GND
 General purpose variable gain amplifier for low voltage
and medium power
6
GND
 Driver for power amplifiers in systems that require good
linearity, such as CDMA, both cellular band (850 MHz)
and PCS (1.9 GHz). This is because of the high output
power and good linearity.
VS1
handbook, halfpage
6
5
4
RFin
VS2+RFout
GND
DESCRIPTION
CTRL
Silicon Monolitic Microwave Integrated Circuit (MMIC)
2 stage variable gain amplifier in double polysilicon
technology in a 6-pin SOT363 SMD plastic package for low
voltage medium power applications.
1
2
3
BIAS
CIRCUIT
Top view
MAM440
Marking code: A3
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS1
supply voltage
3
3.3
V
VS2
supply voltage
3
3.3
V
IS
supply current; pins 3 and 4
VCTRL = 0
0
10
A
VCTRL = 2.7 V; VS = 3 V
51
63
mA
VCTRL = 2.4 V; VS = 3 V
30
37
mA
PL
load power
at 1 dB gain compression point;
f = 1.9 GHz
13

dBm
ACPR
adjacent channel power rejection
f = 1.9 GHz; PL = 10 dBm
49

dBc
f = 836 MHz; PL = 8 dBm
48

dBc
Gp
G
power gain
gain control range
f = 1.9 GHz; PL = 12 dBm
23

dB
f = 836 MHz; PL = 8 dBm
24

dB
f = 836 MHz; PL = 8 dBm
62

dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2001 Feb 05
2
NXP Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS
DC supply voltage

3.3
V
VCTRL
control voltage

< VS
V
ICTRL
control current

1.2
mA
IS1
supply current; pin 3

27
mA
IS2
supply current; pin 4

50
mA
PD
drive power

+10
dBm
Ptot
total power dissipation

200
mW
Tstg
storage temperature
Ts  80 C
65
+150
C
Tj
operating junction temperature

150
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to solder point
Rth j-s
MLD490
300
handbook, halfpage
Ptot
(mW)
200
100
0
0
50
100
150
Ts (°C)
200
Fig.2 Power derating.
2001 Feb 05
3
VALUE
UNIT
350
K/W
NXP Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
CHARACTERISTICS
Tj = 25 C; ZS = ZL = 50 ; VS = 3 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f
frequency range
800

2500
MHz
VS1
supply voltage
2.7
3
3.3
V
VS2
supply voltage
2.7
3
3.3
V
IS
supply current;
pins 3 and 4
ICTRL
control current
VCTRL = 0; PD = 0 mW

0
10
A
VCTRL = 2.7 V; VS = 3 V; PD = 0 mW
37
51
63
mA
VCTRL = 2.4 V; VS = 3 V; PD = 0 mW
23
30
37
mA
VCTRL = 2.7 V
0.7
0.92
1.1
mA
1850

1950
MHz
f = 1900 MHz
f
frequency range
Gp
power gain
VCTRL = 2.7 V; PL = 12 dBm

23

dB
G
gain control range
0 < VCTRL < 2.7 V

56

dB
GCS
gain control slope
note 1

21

dB/V
ACPR
adjacent channel power 1.23 MHz offset; BWACP = 30 kHz;
BWcarrier = 1.23 MHz; PL = 10 dBm
rejection

49

dBc
1.98 MHz offset; BWACP = 30 kHz;
BWcarrier = 1.23 MHz; PL = 10 dBm

74

dBc
dBm
PL
load power
at 1 dB gain compression point

13

VSWRIN
input VSWR
VCTRL = 2.7 V

1:3.5

VSWROUT
output VSWR
VCTRL = 2.7 V

1:1.3

824

849
MHz
f = 836 MHz
f
frequency range
Gp
power gain
VCTRL = 2.7 V; PL = 8 dBm

24

dB
G
gain control range
0 < VCTRL < 2.7 V

62

dB
GCS
gain control slope
note 1

22

dB/V
ACPR
adjacent channel power 885 kHz offset; BWACP = 30 kHz;
BWcarrier = 1.23 MHz; PL = 8 dBm
rejection

49

dBc
1.98 MHz offset; BWACP = 30 kHz;
BWcarrier = 1.23 MHz; PL = 8 dBm

74

dBc
dBm
PL
load power
at 1 dB gain compression point

11

VSWRIN
input VSWR
VCTRL = 2.7 V

1:2

VSWROUT
output VSWR
VCTRL = 2.7 V

1:1.4

Note
1. GCS = (G at VCTRL = 2.5 V  G at VCTRL = 1.5 V) / (VCTRL = 2.5 V  VCTRL = 1.5V)
2001 Feb 05
4
NXP Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
MLD491
60
MLD492
16
handbook, halfpage
handbook, halfpage
IS
(mA)
PL
(dBm)
40
8
20
0
836 MHz
−8
−30
0
0
1
2
VCTRL (V)
3
VS = 3 V.
Fig.3
1900 MHz
−26
−22
−18
−14
−10
PD (dBm)
VS = 3 V; VCTRL = 2.7 V.
Total supply current as a function of control
voltage; typical values.
Fig.4
MLD493
40
Load power as a function of drive power;
typical values.
MLD494
40
Gp
(dB)
handbook, halfpage
handbook, halfpage
Gp
(dB)
20
20
0
0
−20
−20
−40
−40
0
1
2
VCTRL (V)
−60
3
0
1
VS = 3 V; PD = 14 dBm; f = 1.9 GHz.
VS = 3 V; PD = 14 dBm; f = 836 MHz.
Fig.5
Fig.6
Power gain as a function of control voltage;
typical values.
2001 Feb 05
5
2
VCTRL (V)
3
Power gain as a function of control voltage;
typical values.
NXP Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
MLD495
0
MLD496
0
handbook, halfpage
handbook, halfpage
ACPR
(dBc)
ACPR
(dBc)
−20
−20
offset = 1.23 MHz
offset = 0.885 MHz
−40
−40
offset = 1.98 MHz
offset = 1.98 MHz
−60
−60
−80
−20
−10
0
PL (dBm)
−80
−20
10
−10
VS = 3 V; f = 1.9 GHz; PD = 12.8 dBm.
VS = 3.6 V; f = 836 MHz; PD = 16 dBm.
Fig.7
Fig.8
Adjacent channel power rejection as a
function of load power; typical values.
MLD497
160
GCS
handbook, halfpage
(dB/V)
120
80
40
836 MHz
1900 MHz
0
−40
0
1
2
VCTRL (V)
3
VS = 3 V; PD = 14 dBm.
Fig.9
Gain control slope as a function of control
voltage; typical values.
2001 Feb 05
6
0
PL (dBm)
10
Adjacent channel power rejection as a
function of load power; typical values.
NXP Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
ELECTRICAL BLOCK DIAGRAM
handbook, full pagewidth
VS2
R2
VS1
C3
C2
RF input
L1
RF output
L2
Bias-T
DC-block
R1
BIAS
CIRCUIT
VCTRL
C1
MGU298
Fig.10 Test diagram.
List of components (see Fig.10)
COMPONENT
C1
DESCRIPTION
VALUE
multilayer ceramic chip capacitor
DIMENSIONS
10 nF
0603
C2
multilayer ceramic chip capacitor
22 nF
0603
C3
multilayer ceramic chip capacitor
1.5 nF
0603
L1, L2
stripline; note 1
50 
R1
SMD resistor
22 ; 0.16 W
0603
R2
SMD resistor
2.4 ; 0.16 W
0603
Note
1. The striplines are on a gold plated double copper-clad printed-circuit board (r = 6.15), board thickness = 0.64 mm,
copper thickness = 35 m, gold thickness = 5 m.
2001 Feb 05
7
NXP Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2001 Feb 05
REFERENCES
IEC
JEDEC
JEITA
SC-88
8
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
NXP Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
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their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
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Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
2001 Feb 05
9
NXP Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
Terms and conditions of commercial sale  NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
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conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
2001 Feb 05
10
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2010
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp11
Date of release: 2001 Feb 05
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