Data Sheet

BGA7027
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Rev. 2 — 26 November 2010
Product data sheet
1. Product profile
1.1 General description
The BGA7027 MMIC is a one-stage amplifier, offered in a low-cost surface-mount
package. It delivers 28 dBm output power at 1 dB gain compression and a superior
performance up to 2700 MHz.
1.2 Features and benefits







400 MHz to 2700 MHz frequency operating range
11 dB small signal gain at 2 GHz
28 dBm output power at 1 dB gain compression
Integrated active biasing
External matching allows broad application optimization of the electrical performance
5 V single supply operation
ESD protection at all pins
1.3 Applications
 Broadband CPE/MoCA
 WLAN/ISM/RFID
 Wireless infrastructure (base station,
repeater, backhaul systems)
 Industrial applications
 E-metering
 Satellite Master Antenna TV (SMATV)
1.4 Quick reference data
Table 1.
Quick reference data
Input and output impedances matched to 50 . Typical values at: VCC = 5 V; Tcase = 25 C; unless
otherwise specified.
Symbol Parameter
Conditions
[1]
f
frequency
Gp
power gain
PL(1dB)
output power at 1 dB gain compression
f = 2140 MHz
IP3O
output third-order intercept point
f = 2140 MHz
f = 2140 MHz
[1]
Operation outside this range is possible but not guaranteed.
[2]
PL = 17 dBm per tone; spacing = 1 MHz.
[2]
Min
Typ
Max
Unit
400
-
2700 MHz
9.0
11.0 13.0
dB
26
28
-
dBm
40.0 42.5 -
dBm
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
1
VCC(RF)
[1]
2
GND
[2]
3
RF_IN
[1]
Graphic symbol
3
1
2
3
2
sym130
1
[1]
This pin is DC-coupled and requires an external DC-blocking capacitor.
[2]
The center metal base of the SOT89 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3.
Ordering information
Type number
BGA7027
Package
Name
Description
Version
-
plastic surface-mounted package; exposed die pad for good
heat transfer; 3 leads
SOT89
4. Functional diagram
BIAS
ENABLE
RF_IN
BANDGAP
V/I
CONVERTER
3
1
VCC(RF)
2
GND
014aab020
Fig 1.
BGA7027
Product data sheet
Functional diagram
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
2 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VCC
supply voltage
Conditions
[1]
Max
Unit
-
5.7
V
Pi(RF)
RF input power
-
28
dBm
Tcase
case temperature
40
+85
C
Tj
junction temperature
-
150
C
VESD
electrostatic discharge
voltage
Human Body Model (HBM);
according to
JEDEC standard 22-A114E
-
2000
V
Charged Device Model (CDM);
according to
JEDEC standard 22-C101B
-
500
V
[1]
f = 2140 MHz; switched
Min
Withstands switching between zero and maximum Pi(RF)
6. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 85 C; VCC = 5 V;
ICC = 165 mA
38
K/W
7. Static characteristics
Table 6.
Static characteristics
Input and output impedances matched to 50 . Typical values at Tcase = 25 C,
unless otherwise specified.
Symbol
Parameter
VCC
supply voltage
ICC
supply current
Conditions
Min
Typ
Max
Unit
-
5.0
-
V
VCC = 5.0 V
140
165
190
mA
8. Dynamic characteristics
Table 7.
Dynamic characteristics
Input and output impedances matched to 50 . Typical values at VCC = 5 V; Tcase = 25 C, NXP
application circuit; unless otherwise specified.
Symbol Parameter
BGA7027
Product data sheet
f
frequency
Gp
power gain
Conditions
Min
Typ
Max
Unit
[1]
400
-
2700
MHz
f = 940 MHz
[2]
-
19.0
-
dB
f = 1960 MHz
[2]
-
11.5
-
dB
f = 2140 MHz
[2]
9.0
11.0
13.0
dB
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Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
3 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Table 7.
Dynamic characteristics …continued
Input and output impedances matched to 50 . Typical values at VCC = 5 V; Tcase = 25 C, NXP
application circuit; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
PL(1dB)
f = 940 MHz
-
29.0
-
dBm
IP3O
NF
output power at 1 dB gain
compression
output third-order intercept point
noise figure
f = 1960 MHz
-
27.5
-
dBm
f = 2140 MHz
26.0
28.0
-
dBm
f = 940 MHz
[3]
-
41.5
-
dBm
f = 1960 MHz
[3]
-
43.0
-
dBm
f = 2140 MHz
[3]
40.0
42.5
-
dBm
f = 940 MHz
-
2.6
-
dB
f = 1960 MHz
-
3.8
-
dB
f = 2140 MHz
RLin
RLout
[1]
input return loss
output return loss
-
3.9
-
dB
f = 940 MHz
[2]
-
16
-
dB
f = 1960 MHz
[2]
-
8
-
dB
f = 2140 MHz
[2]
-
8
-
dB
f = 940 MHz
[2]
-
11
-
dB
f = 1960 MHz
[2]
-
13
-
dB
f = 2140 MHz
[2]
-
15
-
dB
Operation outside this range is possible but not guaranteed.
[2]
Defined at Pi(RF) = 40 dBm; small signal conditions.
[3]
PL= 17 dBm per tone; spacing = 1 MHz.
9. Scattering parameters
Table 8.
Scattering parameters, MMIC only
VCC = 5 V; ICC = 165 mA; Tcase = 25 C.
f (MHz)
s11
s21
s12
s22
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
400
0.92
178
8.03
93
0.01
49
0.76
176
500
0.92
176
6.55
89
0.01
53
0.75
178
600
0.92
173
5.55
85
0.02
55
0.75
179
700
0.92
171
4.80
82
0.02
56
0.75
177
800
0.92
168
4.24
79
0.02
56
0.75
175
900
0.92
165
3.80
76
0.02
56
0.75
173
1000
0.92
162
3.46
72
0.03
55
0.76
170
1100
0.92
160
3.14
69
0.03
54
0.76
167
1200
0.92
157
2.85
66
0.03
53
0.76
165
1300
0.92
154
2.61
63
0.03
52
0.76
163
1400
0.93
152
2.39
61
0.03
50
0.77
161
1500
0.93
150
2.20
58
0.03
49
0.78
160
1600
0.93
149
2.03
56
0.04
48
0.78
159
1700
0.93
148
1.88
54
0.04
47
0.79
157
BGA7027
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
4 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Table 8.
Scattering parameters, MMIC only …continued
VCC = 5 V; ICC = 165 mA; Tcase = 25 C.
f (MHz)
s11
s21
s12
s22
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
1800
0.94
147
1.75
63
0.04
47
0.80
157
1900
0.94
146
1.64
51
0.04
46
0.80
157
2000
0.94
146
1.53
50
0.04
46
0.80
157
2100
0.93
146
1.45
49
0.04
46
0.81
157
2200
0.93
147
1.39
49
0.05
46
0.81
157
2300
0.93
147
1.33
48
0.05
45
0.81
158
2400
0.92
147
1.29
48
0.05
45
0.80
159
2500
0.91
147
1.26
47
0.05
45
0.80
160
2600
0.91
148
1.24
46
0.06
45
0.80
160
2700
0.89
147
1.23
45
0.06
44
0.79
161
10. Reliability information
Table 9.
Reliability
Life test
Conditions
Intrinsic failure rate
HTOL
according to JESD85; confidence level 60 %; Tj = 55 C; 4
activation energy = 0.7 eV; acceleration factor determined
according to the Arrhenius equation
11. Moisture sensitivity
Table 10.
BGA7027
Product data sheet
Moisture sensitivity level
Test methodology
Class
JESD-22-A113
1
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Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
5 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
12. Application information
12.1 920 MHz to 960 MHz
C8
R1
VCC
C7
C9
L2
L1
C10
50 Ω
MSL1
C1
MSL2
MSL3
C2
MSL4
C3
MSL5
VCC(RF)
RF_IN
MSL6
MSL7
C4
BGA7027
MSL8
C6
MSL9
50 Ω
C5
001aam066
See Table 11 for a list of components.
PCB board specification:
Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m.
Fig 2.
920 MHz to 960 MHz application schematic
001aam130
32
PL(1dB)
(dBm)
(3)
30
(1)
Gp
(dB)
24
(2)
28
22
26
20
24
18
22
0.92
0.93
0.94
0.95
001aam131
26
(1)
(2)
(3)
16
0.92
0.96
0.93
f (GHz)
(1) Tcase = 25 C.
(1) Tcase = 25 C.
(2) Tcase = 85 C.
(3) Tcase = 40 C.
(3) Tcase = 40 C.
Output power at 1 dB gain compression as a
function of frequency
BGA7027
Product data sheet
0.95
0.96
f (GHz)
(2) Tcase = 85 C.
Fig 3.
0.94
Fig 4.
Power gain as a function of frequency
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Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
6 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
001aam132
0
001aam133
46
IP3O
(dBm)
RLin, RLout, ISL
(dB)
44
(1)
(2)
(3)
(2)
−10
42
(1)
40
−20
(3)
38
−30
0.92
0.93
0.94
0.95
36
0.92
0.96
0.93
0.94
0.95
f (GHz)
Tcase = 25 C.
PL = 17 dBm; tone spacing = 1 MHz
(1) RLin.
(1) Tcase = 25 C.
(2) RLout.
(2) Tcase = 85 C.
(3) ISL.
(3) Tcase = 40 C.
Fig 5.
Input return loss, output return loss and
isolation as a function of frequency
Fig 6.
001aan073
0
ACPR
(dBc)
Output third-order intercept point as a function
of frequency
001aan074
0
ACPR
(dBc)
−20
−20
−40
−40
(1)
(2)
(3)
(4)
−60
−80
0.96
f (GHz)
0
5
(1)
(2)
(3)
(4)
−60
10
15
20
25
PL(AV) (dBm)
−80
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 7.5 dB;
5 MHz carrier spacing.
(1) f = 920 MHz; ACPR measured at f  5 MHz
0
5
10
15
20
25
PL(AV) (dBm)
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 9 dB;
10 MHz carrier spacing.
(1) f = 920 MHz; ACPR measured at f  5 MHz
(2) f = 960 MHz; ACPR measured at f  5 MHz
(2) f = 960 MHz; ACPR measured at f  5 MHz
(3) f = 920 MHz; ACPR measured at f  10 MHz
(3) f = 920 MHz; ACPR measured at f  10 MHz
(4) f = 960 MHz; ACPR measured at f  10 MHz
(4) f = 960 MHz; ACPR measured at f  10 MHz
Fig 7.
Adjacent channel power ratio as a function of
average output power
BGA7027
Product data sheet
Fig 8.
Adjacent channel power ratio as a function of
average output power
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Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
7 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
001aan075
55
IP3O
(dBm)
50
(1)
(2)
45
40
35
30
10
12
14
16
18
PL (dBm) per tone
f = 940 MHz; tone spacing = 1 MHz.
(1) Upper sideband
(2) Lower sideband
Fig 9.
Output third-order intercept point as a function of output power per tone
GND
GND
VCC
GND
GND
GND
J3
C9
R1
C8
J1
MSL1
C10
MSL3
MSL2
MSL4
C2
C3
C1
J2
C7
L2
MSL5
L1
MSL6 MSL7 MSL8
C5
C4
RF in
C6
MSL9
RF out
001aam068
See Table 11 for a list of components.
Fig 10.
920 MHz to 960 MHz application reference board
BGA7027
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
8 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Table 11. List of components of 920 MHz to 960 MHz
See Figure 2 and Figure 10 for component layout.
Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 m.
Component Description
Value
Function
Remarks
C1, C6
capacitor
68 pF
DC blocking
Murata, GRM1885C1H680JA01D
C2
capacitor
5.6 pF
input match
Murata, GRM1885C1H5R6CZ01D
C3
capacitor
2.7 pF
input match
Murata, GRM1885C1H2R7CZ01D
C4
capacitor
1.0 pF
output match
Murata, GRM1885C1H1R0CZ01D
C5
capacitor
3.9 pF
output match
Murata, GRM1885C1H3R9CZ01D
C7
capacitor
68 pF
RF decoupling
Murata, GRM1885C1H680JA01D
C8
capacitor
100 nF
LF decoupling
AVX, 0603YC104KAT2A
C9
capacitor
10 F
LF decoupling
AVX, 1206ZG106ZAT2A
C10
capacitor
68 nF
IMD3 suppression
Murata, GRM1888R71H683KA93D
J1, J2
RF connector
SMA
J3
DC connector
6 pins
L1
inductor
22 nH
DC Feed
Tyco Electronics, 36501J022JTDG
L2[1]
inductor
33 nH
IMD3 suppression
Tyco Electronics, 36501J033JTDG
MSL1[2]
micro stripline
1.14 mm  0.8 mm  10.95 mm
input match
MSL2[2]
micro stripline
1.14 mm  0.8 mm  4.3 mm
input match
MSL3[2]
micro stripline
1.14 mm  0.8 mm  1.7 mm
input match
MSL4[2]
micro stripline
1.14 mm  0.8 mm  4.8 mm
input match
MSL5[2]
micro stripline
1.14 mm  0.8 mm  2.7 mm
output match
MSL6[2]
micro stripline
1.14 mm  0.8 mm  3.2 mm
output match
MSL7[2]
micro stripline
1.14 mm  0.8 mm  4.0 mm
output match
MSL8[2]
micro stripline
1.14 mm  0.8 mm  1.6 mm
output match
MSL9[2]
micro stripline
1.14 mm  0.8 mm  10.95 mm
output match
R1
resistor
0
Emerson Network Power,
142-0701-841
MOLEX
Multicomp, MC 0.063W 0603 0R
[1]
Low Q inductor.
[2]
MSL1 to MSL9 dimensions are specified as Width (W), Spacing (S) and Length (L).
BGA7027
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
9 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
12.2 1930 MHz to 1990 MHz
C6
R1
VCC
C5
C7
L1
50 Ω
MSL1
C1
MSL2
MSL3
C8
C2
MSL4
VCC(RF)
RF_IN
MSL5
MSL6
C4
MSL7
50 Ω
C3
BGA7027
L2
001aam069
See Table 12 for a list of components.
PCB board specification:
Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m.
Fig 11. 1930 MHz to 1990 MHz application schematic
001aam134
32
PL(1dB)
(dBm)
001aam135
18
Gp
(dB)
30
16
(3)
28
14
(1)
(2)
26
24
22
1.93
(1)
(2)
(3)
12
10
1.95
1.97
1.99
8
1.93
1.95
f (GHz)
(1) Tcase = 25 C.
(1) Tcase = 25 C.
(2) Tcase = 85 C.
(3) Tcase = 40 C.
(3) Tcase = 40 C.
Fig 12. Output power at 1 dB gain compression as a
function of frequency
Product data sheet
1.99
f (GHz)
(2) Tcase = 85 C.
BGA7027
1.97
Fig 13. Power gain as a function of frequency
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Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
10 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
001aam136
0
001aam137
46
IP3O
(dBm)
RLin, RLout, ISL
(dB)
(1)
44
(2)
42
(3)
40
(1)
(2)
(3)
−10
−20
38
−30
1.93
1.95
1.97
36
1.93
1.99
1.95
1.97
f (GHz)
1.99
f (GHz)
Tcase = 25 C.
PL = 17 dBm; tone spacing = 1 MHz
(1) RLin.
(1) Tcase = 25 C.
(2) RLout.
(2) Tcase = 85 C.
(3) ISL.
(3) Tcase = 40 C.
Fig 14. Input return loss, output return loss and
isolation as a function of frequency
Fig 15. Output third-order intercept point as a function
of frequency
GND
GND
VCC
GND
GND
GND
J3
C7
R1
C6
J1
L2
C8
MSL1
C1
J2
C5
MSL2
MSL3
C2
MSL4
L1
MSL5
MSL6
C3
RF in
C4
MSL7
RF out
001aam072
See Table 12 for a list of components.
Fig 16. 1930 MHz to 1990 MHz application reference board
BGA7027
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
11 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Table 12. List of components of 1930 MHz to 1990 MHz
See Figure 11 and Figure 16 for component layout.
Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 m.
Component Description
Value
Function
Remarks
C1, C4
capacitor
15 pF
DC blocking
Murata, GRM1885C1H150JA01D
C2
capacitor
2.4 pF
input match
Murata, GRM1885C1H2R4CZ01D
C3
capacitor
2.0 pF
output match
Murata, GRM1885C1H2R0CZ01D
C5
capacitor
15 pF
RF decoupling
Murata, GRM1885C1H150JA01D
C6
capacitor
100 nF
LF decoupling
AVX, 0603YC104KAT2A
C7
capacitor
10 F
LF decoupling
AVX, 1206ZG106ZAT2A
C8
capacitor
68 nF
IMD3 suppression
Murata, GRM1888R71H683KA93D
J1, J2
RF connector
SMA
Emerson Network Power,
142-0701-841
J3
DC connector
6 pins
MOLEX
L1
inductor
22 nH
DC Feed
Tyco Electronics, 36501J022JTDG
L2[1]
inductor
33 nH
IMD3 suppression
Tyco Electronics, 36501J033JTDG
MSL1[2]
micro stripline
1.14 mm  0.8 mm  10.95 mm
input match
MSL2[2]
micro stripline
1.14 mm  0.8 mm  10.6 mm
input match
MSL3[2]
micro stripline
1.14 mm  0.8 mm  1.0 mm
input match
MSL4[2]
micro stripline
1.14 mm  0.8 mm  2.7 mm
output match
MSL5[2]
micro stripline
1.14 mm  0.8 mm  2.0 mm
output match
MSL6[2]
micro stripline
1.14 mm  0.8 mm  6.8 mm
output match
MSL7[2]
micro stripline
1.14 mm  0.8 mm  10.95 mm
output match
R1
resistor
0
Multicomp. MC 0.063W 0603 0R
[1]
Low Q inductor.
[2]
MSL1 to MSL7 dimensions are specified as Width (W), Spacing (S) and Length (L).
12.3 2110 MHz to 2170 MHz
C6
R1
VCC
C5
C7
L1
50 Ω
MSL1
C1
MSL2
C8
VCC(RF)
RF_IN
C2
MSL3
BGA7027
MSL4
C4
MSL5
50 Ω
C3
L2
001aam070
See Table 13 for a list of components.
PCB board specification:
Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m.
Fig 17. 2110 MHz to 2170 MHz application schematic
BGA7027
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
12 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
001aam138
32
PL(1dB)
(dBm)
001aam139
18
Gp
(dB)
30
16
(3)
28
(1)
14
(2)
26
12
24
10
22
2.11
2.13
2.15
2.17
(1)
(2)
(3)
8
2.11
2.13
2.15
f (GHz)
(1) Tcase = 25 C.
(1) Tcase = 25 C.
(2) Tcase = 85 C.
(2) Tcase = 85 C.
(3) Tcase = 40 C.
(3) Tcase = 40 C.
Fig 18. Output power at 1 dB gain compression as a
function of frequency
001aam140
0
Fig 19. Power gain as a function of frequency
001aam141
46
IP3O
(dBm)
RLin, RLout, ISL
(dB)
2.17
f (GHz)
(1)
(2)
(3)
44
(1)
−10
42
(2)
(3)
40
−20
38
−30
2.11
2.13
2.15
2.17
36
2.11
2.13
f (GHz)
Tcase = 25 C.
PL = 17 dBm; tone spacing = 1 MHz
(1) Tcase = 25 C.
(2) RLout.
(2) Tcase = 85 C.
(3) ISL.
(3) Tcase = 40 C.
Fig 20. Input return loss, output return loss and
isolation as a function of frequency
Product data sheet
2.17
f (GHz)
(1) RLin.
BGA7027
2.15
Fig 21. Output third-order intercept point as a function
of frequency
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
13 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
001aan076
0
ACPR
(dBc)
ACPR
(dBc)
−20
−20
(1)
(2)
(3)
(4)
−40
−40
−60
−80
001aan077
0
(1)
(2)
(3)
(4)
−60
0
5
10
15
−80
20
25
PL(AV) (dBm)
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 7.5 dB;
5 MHz carrier spacing.
0
5
10
15
20
25
PL(AV) (dBm)
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 9 dB;
10 MHz carrier spacing.
(1) f = 2110 MHz; ACPR measured at f  5 MHz
(1) f = 2110 MHz; ACPR measured at f  5 MHz
(2) f = 2170 MHz; ACPR measured at f  5 MHz
(2) f = 2170 MHz; ACPR measured at f  5 MHz
(3) f = 2110 MHz; ACPR measured at f  10 MHz
(3) f = 2110 MHz; ACPR measured at f  10 MHz
(4) f = 2170 MHz; ACPR measured at f  10 MHz
(4) f = 2170 MHz; ACPR measured at f  10 MHz
Fig 22. Adjacent channel power ratio as a function of
average output power
Fig 23. Adjacent channel power ratio as a function of
average output power
001aan078
55
IP3O
(dBm)
50
(1)
(2)
45
40
35
30
10
12
14
16
18
PL (dBm) per tone
f = 2140 MHz; tone spacing = 1 MHz.
(1) Upper sideband
(2) Lower sideband
Fig 24. Output third-order intercept point as a function of output power per tone
BGA7027
Product data sheet
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Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
14 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
GND
GND
VCC
GND
GND
GND
J3
C7
R1
C6
J1
J2
L2
C5
C8
L1
MSL1
C1
MSL4
MSL2
C4
MSL5
C3
C2
MSL3
RF in
RF out
001aam071
See Table 13 for a list of components.
Fig 25. 2110 MHz to 2170 MHz application reference board
BGA7027
Product data sheet
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Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
15 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Table 13. List of components of 2110 MHz to 2170 MHz
See Figure 17 and Figure 25 for component layout.
Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 m.
Component Description
Value
Function
Remarks
C1, C4
capacitor
15 pF
DC blocking
Murata, GRM1885C1H150JA01D
C2
capacitor
2.2 pF
input match
Murata, GRM1885C1H2R2CZ01D
C3
capacitor
2.0 pF
output match
Murata, GRM1885C1H1R0CZ01D
C5
capacitor
15 pF
RF decoupling
Murata, GRM1885C1H150JA01D
C6
capacitor
100 nF
LF decoupling
AVX, 0603YC104KAT2A
C7
capacitor
10 F
LF decoupling
AVX, 1206ZG106ZAT2A
C8
capacitor
68 nF
IMD3 suppression
Murata, GRM1888R71H683KA92D
J1, J2
RF connector
SMA
Emerson Network Power,
142-0701-841
J3
DC connector
6 pins
MOLEX
L1
inductor
22 nH
DC Feed
Tyco Electronics, 36501J022JTDG
L2[1]
inductor
33 nH
IMD3 suppression
Tyco Electronics, 36501J033JTDG
MSL1[2]
micro stripline
1.14 mm  0.8 mm  10.95 mm
input match
MSL2[2]
micro stripline
1.14 mm  0.8 mm  11.3 mm
input match
MSL3[2]
micro stripline
1.14 mm  0.8 mm  3.2 mm
output match
MSL4[2]
micro stripline
1.14 mm  0.8 mm  8.0 mm
output match
MSL5[2]
micro stripline
1.14 mm  0.8 mm  10.95 mm
output match
R1
resistor
0
Multicomp, MC 0.063W 0603 0R
[1]
Low Q inductor.
[2]
MSL1 to MSL5 dimensions are specified as Width (W), Spacing (S) and Length (L).
12.4 PCB stack
through via
35 μm (1 oz.) copper + 0.3 μm
gold plating
RF & analog routing
RO4003C, 0.51 mm (20 mil)
35 μm (1 oz.) copper
RF & analog ground
(1) 0.2 mm (8 mil)
35 μm (1 oz.) copper
analog routing
FR4, 0.15 mm (6 mil)
35 μm (1 oz.) copper
RF & analog ground
014aab045
RO4003C dielectric constant r = 3.38.
Fig 26. PCB stack
BGA7027
Product data sheet
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Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
16 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
13. Package outline
Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M B
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
OUTLINE
VERSION
e
3.0
e1
HE
Lp
w
1.5
4.25
3.75
1.2
0.8
0.13
REFERENCES
IEC
SOT89
JEDEC
JEITA
TO-243
SC-62
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
06-08-29
Fig 27. Package outline SOT89
BGA7027
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
17 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
14. Abbreviations
Table 14.
Abbreviations
Acronym
Description
3GPP
3rd Generation Partnership Project
CPE
Customer-Premises Equipment
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
HTOL
High Temperature Operating Life
IMD3
3rd-order InterModulation Distortion
ISM
Industrial, Scientific and Medical
MMIC
Monolithic Microwave Integrated Circuit
MoCA
Multimedia over Coax Alliance
RFID
Radio Frequency IDentification
W-CDMA
Wideband Code Division Multiple Access
W-LAN
Wireless Local Area Network
15. Revision history
Table 15.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGA7027 v.2
20101126
Product data sheet
-
BGA7027 v.1
Modifications:
BGA7027 v.1
BGA7027
Product data sheet
•
•
•
•
•
•
•
•
•
•
•
•
•
The status of this data sheet has been changed to Product data sheet
Table 1 on page 1: some values have been changed
Table 1 on page 1: some values have been added
Table 4 on page 3: data for Pi(RF) have been added
Table 5 on page 3: conditions have been changed
Table 7 on page 3: some values have been changed
Table 7 on page 3: some values have been added
Figure 7 on page 7: figure has been added
Figure 8 on page 7: figure has been added
Figure 9 on page 8: figure has been added
Figure 22 on page 14: figure has been added
Figure 23 on page 14: figure has been added
Figure 24 on page 14: figure has been added
20100811
Preliminary data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 November 2010
-
© NXP B.V. 2010. All rights reserved.
18 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BGA7027
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
19 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGA7027
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 November 2010
© NXP B.V. 2010. All rights reserved.
20 of 21
BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
18. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
15
16
16.1
16.2
16.3
16.4
17
18
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 3
Dynamic characteristics . . . . . . . . . . . . . . . . . . 3
Scattering parameters . . . . . . . . . . . . . . . . . . . . 4
Reliability information . . . . . . . . . . . . . . . . . . . . 5
Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 6
920 MHz to 960 MHz . . . . . . . . . . . . . . . . . . . . 6
1930 MHz to 1990 MHz . . . . . . . . . . . . . . . . . 10
2110 MHz to 2170 MHz . . . . . . . . . . . . . . . . . 12
PCB stack . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18
Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Contact information. . . . . . . . . . . . . . . . . . . . . 20
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 26 November 2010
Document identifier: BGA7027
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