Data Sheet

BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Rev. 3 — 9 September 2010
Product data sheet
1. Product profile
1.1 General description
The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless
surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and
superior performance up to 2700 MHz. Its power saving features include easy quiescent
current adjustment enabling class-AB operation and logic-level shutdown control to
reduce the supply current to 4 μA.
1.2 Features and benefits
„
„
„
„
„
„
„
400 MHz to 2700 MHz frequency operating range
16 dB small signal gain at 2 GHz
25 dBm output power at 1 dB gain compression
Integrated active biasing
External matching allows broad application optimization of the electrical performance
3.3 V or 5 V single supply operation
All pins ESD protected
1.3 Applications
„ Wireless infrastructure (base station,
repeater, backhaul systems)
„ Broadband CPE/MoCA
„ Industrial applications
„ E-metering
„ Satellite Master Antenna TV (SMATV)
„ WLAN/ISM/RFID
1.4 Quick reference data
Table 1.
Quick reference data
Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values
at VCC = 5 V; ICC = 130 mA; Tcase = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
ICC
supply current
f
frequency
Gp
power gain
f = 2140 MHz
PL(1dB)
output power at 1 dB gain compression
f = 2140 MHz
IP3O
output third-order intercept point
VCC = 5.0 V
f = 2140 MHz
Min
Typ
Max
Unit
[1]
50
-
170
mA
[2]
400
-
2700 MHz
14.5 16
[3]
17.5
dB
23.5 24.5 -
dBm
34.5 37.5 -
dBm
[1]
The supply current is adjustable; see Section 8.1 “Supply current adjustment”.
[2]
Operation outside this range is possible but not guaranteed.
[3]
PL = 11 dBm per tone; spacing = 1 MHz.
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
2. Pinning information
2.1 Pinning
terminal 1
index area
n.c.
1
VCC(RF)
2
8
ICQ_ADJ
7
RF_IN
6
SHDN
5
VCC(BIAS)
BGA7124
VCC(RF)
3
n.c.
4
GND PAD
014aab046
Transparent top view
Fig 1.
HVSON8 package pin configuration
2.2 Pin description
Table 2.
Pin description
Symbol
Pin
Description
n.c.
1, 4
not connected
VCC(RF)
2, 3
RF output for the power amplifier and DC supply input for the
RF transistor collector [1]
VCC(BIAS)
5
bias supply voltage [2]
SHDN
6
shutdown control function enabled/disabled
RF_IN
7
RF input for the power amplifier [1]
ICQ_ADJ
8
quiescent collector current adjustment controlled by an external resistor
GND
GND pad
RF and DC ground[3]
[1]
This pin is DC-coupled and requires an external DC-blocking capacitor.
[2]
RF decoupled.
[3]
The center metal base of the SOT908-1 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3.
Ordering information
Type number Package
BGA7124
BGA7124
Product data sheet
Name
Description
Version
HVSON8
plastic thermal enhanced very thin small outline
package; no leads; 8 terminals; body 3 × 3 × 0.85 mm
SOT908-1
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© NXP B.V. 2010. All rights reserved.
2 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
4. Functional diagram
VCC
SHDN 6
INPUT MATCH
VCC(BIAS)
ICQ_ADJ
5
8
BIAS
ENABLE
BANDGAP
R2
V/I
CONVERTER
R1
RF_OUT
2, 3 VCC(RF)
RF_IN 7
OUTPUT MATCH
GND
014aab047
Fig 2.
Functional diagram
5. Shutdown control
Table 4.
Mode
Shutdown control settings
Mode description
Function description
Pin
SHDN
Vctrl(sd) (V)
Ictrl(sd) (μA)
Min
Max
Min
Max
Idle
medium power MMIC fully off;
minimal supply current
shutdown control enabled
0
0
0.7
-
2
TX
medium power MMIC transmit mode shutdown control disabled
1
2.5
VCC(BIAS) -
9
BGA7124
Product data sheet
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© NXP B.V. 2010. All rights reserved.
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BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
6. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Min
Max
Unit
RF supply voltage
[1]
-
6.0
V
VCC(BIAS)
bias supply voltage
[1]
-
6.0
V
ICC
supply current
50
200
mA
0.0
VCC(BIAS)
V
-
20
dBm
VCC(RF)
Parameter
Conditions
[1][2]
[3]
Vctrl(sd)
shutdown control voltage
Pi(RF)
RF input power
Tcase
case temperature
−40
+85
°C
Tj
junction temperature
-
150
°C
VESD
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
-
2000
V
Charged Device Model (CDM);
According JEDEC standard 22-C101B
-
500
V
[1]
See Figure 3 for safe operating area.
[2]
The supply current is adjustable; see Section 8.1 “Supply current adjustment”.
[3]
If Vctrl(sd) exceeds VCC(BIAS), the internal ESD circuit can be damaged. To prevent this, it is recommended that the Ictrl(sd) is limited to
20 mA. If the SHDN function is not used, the SHDN pin should be connected to the VCC(BIAS) pin.
014aab048
250
ICC
(mA)
200
150
100
50
2
3
4
5
6
7
VCC(RF) (V)
Exceeding the safe operating area limits may cause serious damage to the product.
The impact on ICC due to the spread of the external ICQ resistor (R2) should be taken into account.
The product-spread on ICC should be taken into account (see Section 8 “Static characteristics”).
Fig 3.
BGA7124
Product data sheet
BGA7124 DC safe operating area
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Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
4 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
7. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
[1]
Thermal characteristics
Parameter
Conditions
Typ Max Unit
thermal resistance from junction to
mounting base
Tcase = 85 °C; VCC = 5 V;
ICC = 130 mA
[1]
32
-
K/W
defined as thermal resistance from junction to GND paddle.
8. Static characteristics
Table 7.
Characteristics
Input and output impedances matched to 50 Ω, pin SHDN = HIGH (shutdown disabled). Typical
values at VCC = 3.3 V or VCC = 5 V; Tcase = 25 °C; unless otherwise specified.
Symbol Parameter
ICC
Conditions
supply current
Min
Typ
Max
Unit
[1]
50
-
200
mA
R1 = 0 Ω; R2 = 1330 Ω
[2]
115
130
145
mA
R1 = 2.2 Ω; R2 = 1070 Ω
[2]
135
160
185
mA
[1]
50
-
170
mA
R1 = 0 Ω; R2 = 1960 Ω
[2]
110
130
150
mA
R1 = 2.2 Ω; R2 = 1650 Ω
[2]
125
150
175
mA
-
4
6
μA
VCC = 3.3 V
VCC = 5.0 V
during shutdown; pin
SHDN = LOW (shutdown enabled)
[1]
The supply current is adjustable; see Section 8.1 “Supply current adjustment”.
[2]
See Section 12 “Application information”.
8.1 Supply current adjustment
The supply current can be adjusted by changing the value of external ICQ resistor (R2);
(see Figure 4).
BGA7124
Product data sheet
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Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
5 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
014aab049
170
014aab050
200
ICC
(mA)
ICC
(mA)
170
130
140
VCC = 5 V; R1 = 0
VCC = 3.3 V; R1 = 0
110
90
80
50
1.6
2.0
2.4
2.8
3.2
3.6
50
0.9
4.0
4.4
R2 (kΩ)
a. 5 V supply voltage.
Fig 4.
1.4
1.9
2.4
2.9
3.4
R2 (kΩ)
b. 3.3 V supply voltage
Supply current as a function of the value of R2
9. Dynamic characteristics
Table 8.
Characteristics at VCC = 5 V
Input and output impedances matched to 50 Ω, pin SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V;
ICC = 130 mA; Tcase = 25 °C; see Section 12 “Application information”; unless otherwise specified.
Symbol
Parameter
f
frequency
Gp
power gain
Conditions
Min
Typ
Max
Unit
400
-
2700
MHz
f = 940 MHz
-
22.7
-
dB
f = 1960 MHz
-
16.4
-
dB
14.5
16.0
17.5
dB
-
14.2
-
dB
[1]
for small signals
f = 2140 MHz
f = 2445 MHz
PL(1dB)
output power at 1 dB gain compression
[2]
f = 940 MHz
-
25.0
-
dBm
f = 1960 MHz
-
24.5
-
dBm
f = 2140 MHz
IP3O
NF
output third-order intercept point
noise figure
BGA7124
Product data sheet
23.5
24.5
-
dBm
f = 2445 MHz
[2]
-
23.5
-
dBm
f = 940 MHz
[3]
-
38.5
-
dBm
f = 1960 MHz
[3]
-
38.0
-
dBm
f = 2140 MHz
[3]
34.5
37.5
-
dBm
f = 2445 MHz
[2][3]
-
36.0
-
dBm
f = 940 MHz
[4]
-
5.2
-
dB
f = 1960 MHz
[4]
-
4.6
-
dB
f = 2140 MHz
[4]
-
4.8
6.5
dB
f = 2445 MHz
[2][4]
-
5.4
-
dB
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BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 8.
Characteristics at VCC = 5 V …continued
Input and output impedances matched to 50 Ω, pin SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V;
ICC = 130 mA; Tcase = 25 °C; see Section 12 “Application information”; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RLin
input return loss
f = 940 MHz
-
−15
-
dB
f = 1960 MHz
-
−11
-
dB
f = 2140 MHz
-
−17
-
dB
-
−13
-
dB
f = 940 MHz
-
−8
-
dB
f = 1960 MHz
-
−12
-
dB
f = 2140 MHz
-
−15
-
dB
-
−25
-
dB
f = 2445 MHz
RLout
output return loss
f = 2445 MHz
[1]
Operation outside this range is possible but not guaranteed.
[2]
ICC = 150 mA; see Section 12 “Application information”.
[3]
PL = 11 dBm per tone; spacing = 1 MHz.
[4]
Defined at Pi = −40 dBm; small signal conditions.
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
[2]
[2]
© NXP B.V. 2010. All rights reserved.
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BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 9.
Characteristics at VCC = 3.3 V
Input and output impedances matched to 50 Ω, pin SHDN = HIGH (shutdown disabled). Typical values at VCC = 3.3 V;
ICC = 130 mA; Tcase = 25 °C, see Section 12 “Application information”; unless otherwise specified.
Symbol
Parameter
f
frequency
Gp
power gain
Conditions
[1]
f = 2445 MHz
IP3O
output third-order intercept point
noise figure
-
22.5
-
dB
-
13.8
-
dB
-
23.5
-
dBm
-
22.0
-
dBm
f = 940 MHz
-
36.4
-
dBm
[2][3]
-
35.2
-
dBm
[4]
-
5.5
-
dB
[2][4]
-
5.5
-
dB
-
−15
-
dB
f = 940 MHz
output return loss
[2]
f = 940 MHz
f = 2445 MHz
[1]
Operation outside this range is possible but not guaranteed.
[2]
ICC = 160 mA; see Section 12 “Application information”.
[3]
PL= 11 dBm per tone; spacing = 1 MHz.
[4]
Defined at Pi = −40 dBm; small signal conditions.
Product data sheet
MHz
[3]
f = 940 MHz
input return loss
BGA7124
Unit
2700
[2]
f = 2445 MHz
RLout
Max
-
f = 2445 MHz
f = 2445 MHz
RLin
[2]
output power at 1 dB gain compression f = 940 MHz
f = 2445 MHz
NF
Typ
400
for small signals
f = 940 MHz
PL(1dB)
Min
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Rev. 3 — 9 September 2010
[2]
-
−10
-
dB
-
−9
-
dB
-
−25
-
dB
© NXP B.V. 2010. All rights reserved.
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BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
9.1 Scattering parameters
Table 10. Scattering parameters at 5 V, MMIC only
VCC = 5 V; ICC = 130 mA; Tcase = 25 °C.
f (MHz)
s11
s21
s12
s22
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
400
0.85
161.56
22.94
82.35
0.01
17.02
0.46
−156.50
500
0.90
159.44
11.82
82.58
0.01
27.08
0.63
176.13
600
0.90
152.15
9.98
73.86
0.01
24.10
0.64
169.61
700
0.89
145.75
8.59
66.00
0.01
21.41
0.64
164.34
800
0.88
139.33
7.55
58.86
0.02
18.47
0.65
159.29
900
0.87
133.19
6.74
51.66
0.02
14.00
0.65
154.44
1000
0.87
127.07
6.14
45.11
0.02
11.25
0.65
149.58
1100
0.87
120.67
5.61
38.20
0.02
7.99
0.65
144.25
1200
0.87
114.18
5.19
31.60
0.02
4.20
0.64
139.60
1300
0.86
107.68
4.82
25.08
0.02
0.31
0.64
134.85
1400
0.86
100.86
4.51
18.49
0.02
−4.01
0.63
130.13
1500
0.86
94.14
4.23
11.74
0.02
−8.65
0.63
125.02
1600
0.86
87.48
3.99
5.25
0.03
−13.15
0.63
120.13
1700
0.86
80.83
3.77
−1.50
0.03
−18.16
0.62
114.98
1800
0.86
74.14
3.56
−8.13
0.03
−23.28
0.62
109.78
1900
0.86
67.39
3.37
−14.94
0.03
−28.54
0.62
104.46
2000
0.86
60.70
3.19
−21.68
0.03
−33.68
0.63
99.01
2100
0.86
53.97
3.02
−28.68
0.03
−39.37
0.63
93.58
2200
0.86
47.78
2.85
−35.14
0.03
−44.84
0.63
88.17
2300
0.86
41.57
2.69
−41.70
0.03
−50.27
0.64
83.06
2400
0.86
35.43
2.54
−48.11
0.03
−55.62
0.64
78.10
2500
0.86
29.74
2.39
−54.19
0.04
−60.71
0.65
73.31
2600
0.86
24.79
2.27
−60.06
0.04
−65.48
0.65
68.64
2700
0.85
19.58
2.15
−66.14
0.04
−70.66
0.66
64.16
BGA7124
Product data sheet
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Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
9 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 11. Scattering parameters at 3.3 V, MMIC only
VCC = 3.3 V; ICC = 130 mA; Tcase = 25 °C.
f (MHz)
s11
s21
s12
s22
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
400
0.84
161.94
21.25
73.81
0.01
17.66
0.57
−154.41
500
0.91
159.25
11.56
79.01
0.01
28.15
0.65
178.05
600
0.90
151.98
9.67
70.71
0.01
24.80
0.66
171.32
700
0.90
145.57
8.29
63.37
0.01
21.89
0.66
165.59
800
0.89
139.18
7.26
56.54
0.02
19.04
0.66
160.37
900
0.88
132.87
6.48
49.74
0.02
15.35
0.66
155.28
1000
0.88
126.78
5.90
43.30
0.02
11.89
0.66
150.23
1100
0.87
120.46
5.39
36.53
0.02
8.33
0.66
144.88
1200
0.87
113.94
4.97
30.05
0.02
4.50
0.65
140.03
1300
0.87
107.48
4.62
23.62
0.02
0.35
0.65
135.35
1400
0.87
100.69
4.32
17.15
0.02
−3.92
0.64
130.48
1500
0.86
93.93
4.05
10.48
0.02
−8.62
0.64
125.46
1600
0.86
87.28
3.81
4.05
0.03
−13.28
0.64
120.31
1700
0.86
80.71
3.61
−2.66
0.03
−18.26
0.64
115.13
1800
0.86
74.00
3.40
−9.21
0.03
−23.51
0.64
109.99
1900
0.86
67.27
3.22
−15.97
0.03
−28.87
0.63
104.66
2000
0.86
60.64
3.05
−22.71
0.03
−34.22
0.64
99.36
2100
0.86
53.84
2.89
−29.68
0.03
−39.95
0.64
93.93
2200
0.86
47.60
2.72
−36.12
0.03
−45.44
0.64
88.55
2300
0.86
41.43
2.57
−42.66
0.03
−51.06
0.65
83.38
2400
0.86
35.35
2.42
−49.01
0.04
−56.53
0.65
78.44
2500
0.85
29.64
2.28
−55.12
0.04
−61.72
0.66
73.56
2600
0.85
24.72
2.16
−60.91
0.04
−66.76
0.66
68.80
2700
0.85
19.59
2.04
−66.91
0.04
−71.84
0.67
64.30
10. Reliability information
Table 12.
Reliability
Life test Conditions
HTOL
Intrinsic failure rate
According JESD85; confidence level 60 %; Tj = 55 °C;
activation energy = 0.7 eV; acceleration factor determined
according Arrhenius
4
11. Moisture sensitivity
Table 13.
BGA7124
Product data sheet
Moisture sensitivity level
Test methodology
Class
JESD-22-A113
1
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Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
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BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
12. Application information
12.1 5 V applications
12.1.1 920 MHz to 960 MHz
C8
R1
J3
VCC
C10
C7
C9
L2
VCC(BIAS)
50 Ω
MSL1
C1
MSL2
MSL3
J1
VCC(RF)
RF_IN
MSL4
L1
MSL5
MSL6
MSL7
C6
50 Ω
MSL8
J2
RF_OUT
C2
C3
C4
BGA7124
ICQ_ADJ
C5
SHDN
R2
014aab051
enable
See Table 14 for a list of components.
PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm.
Fig 5.
5 V/130 mA application schematic; 920 MHz to 960 MHz
014aab052
30
PL(1dB)
(dBm)
014aab053
28
Gp
(dB)
28
26
(1)
(2)
26
(1)
24
(2)
(3)
24
(3)
22
22
20
20
0.92
0.93
0.94
0.95
18
0.92
0.96
0.93
f (GHz)
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
(3) Tcase = 85 °C.
Output power at 1 dB gain compression as a
function of frequency
BGA7124
Product data sheet
0.95
0.96
f (GHz)
(1) Tcase = −40 °C.
Fig 6.
0.94
Fig 7.
Power gain as a function of frequency
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Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
11 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
014aab054
0
014aab055
42
RLin, RLout, ISL
(dB)
IP3O
(dBm)
RLout
−10
40
(1)
RLin
(2)
(3)
−20
38
ISL
−30
0.92
0.93
0.94
0.95
36
0.92
0.96
0.93
0.94
0.95
0.96
f (GHz)
f (GHz)
Tcase = 25 °C.
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
Fig 8.
Input return loss, output return loss and
isolation as a function of frequency
Fig 9.
Output third-order intercept point as a function
of frequency
GND
GND
VCC
ena ble
n.c.
GND
J3
C9
R1
C8
J1
J2
C10
MSL2
C7 MSL6 MSL7
L1
MSL1
C1
L2
MSL3
C2
C6
C4
C3
J I HGF EDCBA
MSL8
C5
1 2 3 4 5 6 7 8 9 10 12
MSL4 MSL5 11 13
RF in
RF out
R2
014aab056
See Table 14 for a list of components.
Fig 10. 5 V/130 mA application reference board; 920 MHz to 960 MHz
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
12 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 14. 5 V/130 mA application list of components; 920 MHz to 960 MHz
See Figure 5 and Figure 10 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;
copper plating thickness = 35 μm.
Component
Description
Value
Function
Remarks
C1, C6
capacitor
68 pF
DC blocking
Murata GRM1885C1H680JA01D
C2, C3
capacitor
3.3 pF
input match
Murata GRM1885C1H3R3CZ01D
C4
capacitor
3.9 pF
output match
Murata GRM1885C1H3R9CZ01D
C5
capacitor
1.0 pF
output match
Murata GRM1885C1H1R0CZ01D
C7
capacitor
68 pF
RF decoupling
Murata GRM1885C1H680JA01D
C8
capacitor
100 nF
DC decoupling
AVX 0603YC104KAT2A
C9
capacitor
10 μF
DC decoupling
AVX 1206ZG106ZAT2A
C10
capacitor
12 pF
noise decoupling
Murata GRM1555C1H120JZ01D
J1, J2
RF connector
SMA
Emerson Network Power
142-0701-841
J3
DC connector
6-pins
MOLEX
L1
inductor
2.2 nH
output match
Tyco electronics 36501J2N2JTDG
L2
inductor
22 nH
DC feed
Tyco electronics 36501J022JTDG
MSL1[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
input match
MSL2[1]
micro stripline
1.14 mm × 0.8 mm × 2.95 mm
input match
MSL3[1]
micro stripline
1.14 mm × 0.8 mm × 7.75 mm
input match
MSL4[1]
micro stripline
1.14 mm × 0.8 mm × 23.4 mm
output match
MSL5[1]
micro stripline
1.14 mm × 0.8 mm × 2.2 mm
output match
MSL6[1]
micro stripline
1.14 mm × 0.8 mm × 3.15 mm
output match
MSL7[1]
micro stripline
1.14 mm × 0.8 mm × 2.3 mm
output match
MSL8[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
output match
R1
resistor
0Ω
R2
resistor
(trimmer)
2 kΩ
[1]
Multicomp MC 0.063W 0603 0R
bias adjustment
Bourns 3214W-1-202E
MSL1 to MSL8 dimensions specified as Width (W), Spacing (S) and Length (L).
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
13 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
12.1.2 1930 MHz to 1990 MHz
VCC
C6
R1
J3
C5
C7
L1
VCC(BIAS)
50 Ω
MSL1
C1
MSL2
J1
VCC(RF)
RF_IN
MSL3
MSL4
MSL5
C4
MSL6
50 Ω
J2
RF_OUT
C2
C3
BGA7124
ICQ_ADJ
SHDN
R2
enable
014aab057
See Table 15 for a list of components.
PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm.
Fig 11. 5 V/130 mA application schematic; 1930 MHz to 1990 MHz
014aab058
30
PL(1dB)
(dBm)
014aab059
20
Gp
(dB)
28
(1)
18
(2)
(1)
26
16
(2)
24
(3)
14
(3)
22
20
1.93
12
1.95
1.97
1.99
10
1.93
1.95
f (GHz)
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
(3) Tcase = 85 °C.
Fig 12. Output power at 1 dB gain compression as a
function of frequency
Product data sheet
1.99
f (GHz)
(1) Tcase = −40 °C.
BGA7124
1.97
Fig 13. Power gain as a function of frequency
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
14 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
014aab060
0
014aab061
40
RLin, RLout, ISL
(dB)
IP3O
(dBm)
(2)
(1)
−10
38
RLout
(3)
RLin
−20
36
ISL
−30
1.93
1.95
1.97
34
1.93
1.99
1.95
1.97
f (GHz)
1.99
f (GHz)
Tcase = 25 °C.
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
Fig 14. Input return loss, output return loss and
isolation as a function of frequency
Fig 15. Output third-order intercept point as a function
of frequency
GND
GND
VCC
enable
n.c.
GND
J3
C7
R1
C6
J1
J2
C5 MSL4 MSL5
L1
MSL1
C1
MSL2
MSL3
C2
C4
MSL6
C3
J I HGF EDCBA
1 2 3 4 5 6 7 8 9 10 12
11 13
RF in
RF out
R2
014aab062
See Table 15 for a list of components.
Fig 16. 5 V/130 mA application reference board; 1930 MHz to 1990 MHz
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
15 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 15. 5 V/130 mA application list of components; 1930 MHz to 1990 MHz
See Figure 11 and Figure 16 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;
copper plating thickness = 35 μm.
Component
Description
Value
Function
Remarks
C1, C4
capacitor
15 pF
DC blocking
Murata GRM1885C1H150JA01D
C2
capacitor
2.2 pF
input match
Murata GRM1885C1H2R2CZ01D
C3
capacitor
1.2 pF
output match
Murata GRM1885C1H1R2CZ01D
C5
capacitor
15 pF
RF decoupling
Murata GRM1885C1H150JA01D
C6
capacitor
100 nF
DC decoupling
AVX 0603YC104KAT2A
C7
capacitor
10 μF
DC decoupling
AVX 1206ZG106ZAT2A
J1, J2
RF connector
SMA
Emerson Network Power
142-0701-841
J3
DC connector
6-pins
MOLEX
L1
inductor
22 nH
DC feed
MSL1[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
input match
MSL2[1]
micro stripline
1.14 mm × 0.8 mm × 10.8 mm
input match
MSL3[1]
micro stripline
1.14 mm × 0.8 mm × 5.8 mm
output match
MSL4[1]
micro stripline
1.14 mm × 0.8 mm × 2.2 mm
output match
MSL5[1]
Tyco electronics 36501J022JTDG
micro stripline
1.14 mm × 0.8 mm × 3.7 mm
output match
MSL6[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
output match
R1
resistor
0Ω
R2
resistor (trimmer) 2 kΩ
[1]
Multicomp MC 0.063W 0603 0R
bias adjustment
Bourns 3214W-1-202E
MSL1 to MSL6 dimensions specified as Width (W), Spacing (S) and Length (L).
12.1.3 2110 MHz to 2170 MHz
C6
R1
J3
VCC
C5
C7
L1
VCC(BIAS)
50 Ω
MSL1
C1
MSL2
J1
VCC(RF)
RF_IN
MSL3
MSL4
MSL5
C4
MSL6
50 Ω
J2
RF_OUT
C2
BGA7124
ICQ_ADJ
C3
SHDN
R2
014aab063
enable
See Table 16 for a list of components.
PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm.
Fig 17. 5 V/130 mA application schematic; 2110 MHz to 2170 MHz
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
16 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
014aab064
30
PL(1dB)
(dBm)
014aab065
20
Gp
(dB)
28
18
(1)
(2)
26
16
(1)
(3)
(2)
24
14
(3)
22
12
20
2.11
2.13
2.15
2.17
10
2.11
2.13
2.15
f (GHz)
(1) Tcase = −40 °C.
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
(3) Tcase = 85 °C.
Fig 18. Output power at 1 dB gain compression as a
function of frequency
014aab066
0
2.17
f (GHz)
RLin, RLout, ISL
(dB)
Fig 19. Power gain as a function of frequency
014aab067
40
IP3O
(dBm)
−10
38
(3)
RLout
(2)
RLin
(1)
−20
36
ISL
−30
2.11
2.13
2.15
2.17
34
2.11
2.13
2.15
2.17
f (GHz)
f (GHz)
Tcase = 25 °C.
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
Fig 20. Input return loss, output return loss and
isolation as a function of frequency
BGA7124
Product data sheet
Fig 21. Output third-order intercept point as a function
of frequency
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
17 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
GND
GND
VCC
enable
n.c.
GND
J3
C7
R1
C6
J1
J2
C5 MSL4 MSL5
L1
MSL1
C1
MSL2
MSL3
C2
C4
MSL6
C3
J I HGF EDCBA
1 2 3 4 5 6 7 8 9 10 12
11 13
RF in
RF out
R2
014aab068
See Table 16 for a list of components.
Fig 22. 5 V/130 mA application reference board; 2110 MHz to 2170 MHz
Table 16. 5 V/130 mA application list of components; 2110 MHz to 2170 MHz
See Figure 17 and Figure 22 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;
copper plating thickness = 35 μm.
Component Description
Value
C1, C4
capacitor
15 pF
DC blocking
Murata GRM1885C1H150JA01D
C2
capacitor
2.7 pF
input match
Murata GRM1885C1H2R7CZ01D
C3
capacitor
1.5 pF
output match
Murata GRM1885C1H1R5CZ01D
C5
capacitor
15 pF
RF decoupling
Murata GRM1885C1H150JA01D
C6
capacitor
100 nF
DC decoupling
AVX 0603YC104KAT2A
C7
capacitor
10 μF
DC decoupling
AVX 1206ZG106ZAT2A
J1, J2
RF connector
SMA
Emerson Network Power 142-0701-841
J3
DC connector
6-pins
MOLEX
L1
inductor
22 nH
DC feed
MSL1[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
input match
MSL2[1]
micro stripline
1.14 mm × 0.8 mm × 10.8 mm
input match
MSL3[1]
micro stripline
1.14 mm × 0.8 mm × 5.8 mm
output match
MSL4[1]
micro stripline
1.14 mm × 0.8 mm × 2.5 mm
output match
MSL5[1]
micro stripline
1.14 mm × 0.8 mm × 3.5 mm
output match
BGA7124
Product data sheet
Function
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
Remarks
Tyco electronics 36501J022JTDG
© NXP B.V. 2010. All rights reserved.
18 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 16. 5 V/130 mA application list of components; 2110 MHz to 2170 MHz …continued
See Figure 17 and Figure 22 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;
copper plating thickness = 35 μm.
Component Description
Value
Function
MSL6[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
output match
R1
resistor
0Ω
R2
resistor
(trimmer)
2 kΩ
[1]
Remarks
Multicomp MC 0.063W 0603 0R
bias
adjustment
Bourns 3214W-1-202E
MSL1 to MSL6 dimensions specified as Width (W), Spacing (S) and Length (L).
12.1.4 2405 MHz to 2485 MHz
VCC
C7
R1
J3
C6
C8
L1
VCC(BIAS)
50 Ω
MSL1
C1
MSL2
VCC(RF)
RF_IN
J1
MSL3
MSL4
C5
50 Ω
MSL5
J2
RF_OUT
C2
BGA7124
ICQ_ADJ
C3
C4
SHDN
R2
014aab069
enable
See Table 17 for a list of components.
PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm.
Fig 23. 5 V/130 mA application schematic; 2405 MHz to 2485 MHz
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
19 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
014aab070
26
PL(1dB)
(dBm)
Gp
(dB)
(3)
24
014aab071
20
18
(2)
(1)
22
16
(1)
(2)
20
14
18
12
16
2.405
2.425
2.445
2.465
2.485
f (GHz)
10
2.405
(3)
2.425
(1) Tcase = −40 °C.
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
(3) Tcase = 85 °C.
Fig 24. Output power at 1 dB gain compression as a
function of frequency
014aab072
0
RLin, RLout, ISL
(dB)
2.445
2.465
2.485
f (GHz)
Fig 25. Power gain as a function of frequency
014aab073
38
IP3O
(dBm)
(3)
−10
36
(2)
RLin
(1)
−20
34
ISL
RLout
−30
2.405
2.425
2.445
2.465
2.485
f (GHz)
Tcase = 25 °C.
32
2.405
2.425
2.445
2.465
2.485
f (GHz)
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
Fig 26. Input return loss, output return loss and
isolation as a function of frequency
BGA7124
Product data sheet
Fig 27. Output third-order intercept point as a function
of frequency
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
20 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
GND
GND
VCC
enable
n.c.
GND
J3
C8
R1
C7
J1
J2
C6
L1
MSL1
C1
MSL2
MSL3
C2
C3
J I HGF EDCBA
MSL4
C4
C5
MSL5
1 2 3 4 5 6 7 8 9 10 12
11 13
RF in
RF out
R2
014aab074
See Table 17 for a list of components.
Fig 28. 5 V/130 mA application reference board; 2405 MHz to 2485 MHz
Table 17. 5 V/130 mA application list of components; 2405 MHz to 2485 MHz
See Figure 23 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;
copper plating thickness = 35 μm.
Component Description
Value
Function
C1, C5
capacitor
12 pF
DC blocking
Murata GRM1885C1H120JA01D
C2
capacitor
2.2 pF
input match
Murata GRM1885C1H2R2CZ01D
C3
capacitor
0.82 pF
output match
Murata GRM1885C1HR82CZ01D
C4
capacitor
0.68 pF
output match
Murata GRM1885C1HR68CZ01D
C6
capacitor
12 pF
RF decoupling
Murata GRM1885C1H120JA01D
C7
capacitor
100 nF
DC decoupling
AVX 0603YC104KAT2A
C8
capacitor
10 μF
DC decoupling
AVX 1206ZG106ZAT2A
J1, J2
RF connector
SMA
Emerson Network Power
142-0701-841
J3
DC connector
6-pins
MOLEX
L1
inductor
22 nH
DC feed
MSL1[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
input match
MSL2[1]
micro stripline
1.14 mm × 0.8 mm × 10.8 mm
input match
MSL3[1]
micro stripline
1.14 mm × 0.8 mm × 7.3 mm
output match
MSL4[1]
micro stripline
1.14 mm × 0.8 mm × 4.3 mm
output match
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
Remarks
Tyco electronics 36501J022JTDG
© NXP B.V. 2010. All rights reserved.
21 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 17. 5 V/130 mA application list of components; 2405 MHz to 2485 MHz …continued
See Figure 23 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;
copper plating thickness = 35 μm.
Component Description
Value
Function
MSL5[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
output match
R1
resistor
2.2 Ω
R2
resistor (trimmer)
2 kΩ
[1]
Remarks
Multicomp MC 0.063W 0603 2R2
bias adjustment Bourns 3214W-1-202E
MSL1 to MSL5 dimensions specified as Width (W), Spacing (S) and Length (L).
12.2 3.3 V applications
12.2.1 920 MHz to 960 MHz
C8
R1
J3
VCC
C7
C9
L2
VCC(BIAS)
50 Ω
MSL1
C1
MSL2
MSL3
J1
VCC(RF)
RF_IN
MSL4
L1
MSL5
MSL6
MSL7
C6
MSL8
50 Ω
J2
RF_OUT
C2
C3
BGA7124
ICQ_ADJ
C4
C5
SHDN
R2
enable
014aab075
See Table 18 for a list of components.
PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm.
Fig 29. 3.3 V/130 mA application schematic; 920 MHz to 960 MHz
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
22 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
014aab076
30
PL(1dB)
(dBm)
014aab077
28
Gp
(dB)
28
26
26
24
(1)
(2)
(1)
(2)
24
(3)
22
(3)
22
20
20
0.92
0.93
0.94
0.95
0.96
18
0.92
0.93
0.94
0.95
f (GHz)
(1) Tcase = −40 °C.
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
(3) Tcase = 85 °C.
Fig 30. Output power at 1 dB gain compression as a
function of frequency
014aab078
0
RLin, RLout, ISL
(dB)
Fig 31. Power gain as a function of frequency
014aab079
40
IP3O
(dBm)
RLout
−10
0.96
f (GHz)
38
RLin
−20
(2)
36
(3)
(1)
ISL
−30
0.92
0.93
0.94
0.95
0.96
34
0.92
0.93
0.94
0.95
0.96
f (GHz)
f (GHz)
Tcase = 25 °C.
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
Fig 32. Input return loss, output return loss and
isolation as a function of frequency
BGA7124
Product data sheet
Fig 33. Output third-order intercept point as a function
of frequency
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
23 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
GND
GND
VCC
enable
n.c.
GND
J3
C9
R1
C8
J1
J2
MSL2
MSL4
C7 MSL6 MSL7
L2
MSL1
C1
L1
MSL3
C2
C3
C6
C4
J I HGF EDCBA
MSL8
C5
1 2 3 4 5 6 7 8 9 10 12
11 13
MSL5
RF in
RF out
R2
014aab080
See Table 18 for a list of components.
Fig 34. 3.3 V/130 mA application reference board; 920 MHz to 960 MHz
Table 18. 3.3 V/130 mA application list of components; 920 MHz to 960 MHz
See Figure 29 and Figure 34 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;
copper plating thickness = 35 μm.
Component Description
Value
Function
Remarks
C1, C6
capacitor
68 pF
DC blocking
Murata GRM1885C1H680JA01D
C2, C3
capacitor
3.3 pF
input match
Murata GRM1885C1H3R3CZ01D
C4
capacitor
3.9 pF
output match
Murata GRM1885C1H3R9CZ01D
C5
capacitor
1.0 pF
output match
Murata GRM1885C1H1R0CZ01D
C7
capacitor
68 pF
RF decoupling
Murata GRM1885C1H680JA01D
C8
capacitor
100 nF
DC decoupling
AVX 0603YC104KAT2A
C9
capacitor
10 μF
DC decoupling
AVX 1206ZG106ZAT2A
J1, J2
RF connector
SMA
Emerson Network Power
142-0701-841
J3
DC connector
6-pins
MOLEX
L1
inductor
2.2 nH
output match
Tyco electronics 36501J2N2JTDG
L2
inductor
22 nH
DC feed
Tyco electronics 36501J022JTDG
MSL1[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
input match
MSL2[1]
micro stripline
1.14 mm × 0.8 mm × 2.95 mm
input match
MSL3[1]
micro stripline
1.14 mm × 0.8 mm × 7.75 mm
input match
MSL4[1]
micro stripline
1.14 mm × 0.8 mm × 23.4 mm
output match
MSL5[1]
micro stripline
1.14 mm × 0.8 mm × 2.2 mm
output match
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
24 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 18. 3.3 V/130 mA application list of components; 920 MHz to 960 MHz …continued
See Figure 29 and Figure 34 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;
copper plating thickness = 35 μm.
Component Description
Value
Function
MSL6[1]
micro stripline
1.14 mm × 0.8 mm × 2.4 mm
output match
MSL7[1]
micro stripline
1.14 mm × 0.8 mm × 2.3 mm
output match
MSL8[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
output match
R1
resistor
0Ω
R2
resistor (trimmer) 2 kΩ
[1]
Remarks
Multicomp MC 0.063W 0603 0R
bias adjustment
Bourns 3214W-1-202E
MSL1 to MSL8 dimensions specified as Width (W), Spacing (S) and Length (L).
12.2.2 2405 MHz to 2485 MHz
C7
R1
J3
VCC
C6
C8
L1
VCC(BIAS)
50 Ω
MSL1
C1
MSL2
J1
VCC(RF)
RF_IN
MSL3
MSL4
C5
MSL5
50 Ω
J2
RF_OUT
C2
BGA7124
ICQ_ADJ
C3
C4
SHDN
R2
enable
014aab081
See Table 19 for a list of components.
PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm
Fig 35. 3.3 V/130 mA application schematic; 2405 MHz to 2485 MHz
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
25 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
014aab082
26
PL(1dB)
(dBm)
014aab083
20
Gp
(dB)
24
18
(3)
(2)
22
16
(1)
(1)
(2)
20
14
(3)
18
12
16
2.405
2.425
2.445
2.465
2.485
f (GHz)
10
2.405
2.425
(1) Tcase = −40 °C.
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
(3) Tcase = 85 °C.
Fig 36. Output power at 1 dB gain compression as a
function of frequency
014aab084
0
RLin, RLout, ISL
(dB)
2.445
2.465
2.485
f (GHz)
Fig 37. Power gain as a function of frequency
014aab085
38
IP3O
(dBm)
RLin
−10
36
(2)
−20
(1)
34
(3)
ISL
RLout
−30
2.405
2.425
2.445
2.465
2.485
f (GHz)
Tcase = 25 °C.
32
2.405
2.425
2.445
2.465
2.485
f (GHz)
(1) Tcase = −40 °C.
(2) Tcase = 25 °C.
(3) Tcase = 85 °C.
Fig 38. Input return loss, output return loss and
isolation as a function of frequency
BGA7124
Product data sheet
Fig 39. Output third-order intercept point as a function
of frequency
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
26 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
GND
GND
VCC
enable
n.c.
GND
J3
C8
R1
C7
J1
J2
C6
L1
MSL1
C1
MSL2
MSL3
C2
C3
J I HGF EDCBA
MSL4
C4
C5
MSL5
1 2 3 4 5 6 7 8 9 10 12
11 13
RF in
RF out
R2
014aab086
See Table 19 for a list of components.
Fig 40. 3.3 V/130 mA application reference board; 2405 MHz to 2485 MHz
Table 19. 3.3 V/130 mA application list of components; 2405 MHz to 2485 MHz
See Figure 35 and Figure 40 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;
copper plating thickness = 35 μm.
Component Description
Value
Function
Remarks
C1, C5
capacitor
12 pF
DC blocking
Murata GRM1885C1H120JA01D
C2
capacitor
2.2 pF
input match
Murata GRM1885C1H2R2CZ01D
C3
capacitor
0.82 pF
output match
Murata GRM1885C1HR82CZ01D
C4
capacitor
0.68 pF
output match
Murata GRM1885C1HR68CZ01D
C6
capacitor
12 pF
RF decoupling
Murata GRM1885C1H120JA01D
C7
capacitor
100 nF
DC decoupling
AVX 0603YC104KAT2A
C8
capacitor
10 μF
DC decoupling
AVX 1206ZG106ZAT2A
J1, J2
RF connector
SMA
Emerson Network Power
142-0701-841
J3
DC connector
6-pins
MOLEX
L1
inductor
22 nH
MSL1[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm input match
MSL2[1]
micro stripline
1.14 mm × 0.8 mm × 10.8 mm
input match
MSL3[1]
micro stripline
1.14 mm × 0.8 mm × 7.3 mm
output match
MSL4[1]
micro stripline
1.14 mm × 0.8 mm × 4.3 mm
output match
BGA7124
Product data sheet
DC feed
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
Tyco electronics 36501J022JTDG
© NXP B.V. 2010. All rights reserved.
27 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 19. 3.3 V/130 mA application list of components; 2405 MHz to 2485 MHz …continued
See Figure 35 and Figure 40 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;
copper plating thickness = 35 μm.
Component Description
Value
MSL5[1]
micro stripline
1.14 mm × 0.8 mm × 10.95 mm output match
R1
resistor
2.2 Ω
R2
resistor (trimmer) 2 kΩ
[1]
Function
Remarks
Multicomp MC 0.063W 0603 2R2
bias adjustment
Bourns 3214W-1-202E
MSL1 to MSL5 dimensions specified as Width (W), Spacing (S) and Length (L).
12.3 PCB stack
through via
35 μm (1 oz.) copper + 0.3 μm
gold plating
RF and analog routing
RO4003C, 0.51 mm (20 mil)
35 μm (1 oz.) copper
RF and analog ground
(1) 0.2 mm (8 mil)
35 μm (1 oz.) copper
analog routing
FR4, 0.15 mm (6 mil)
35 μm (1 oz.) copper
RF and analog ground
014aab087
(1) Pre-pregnated
RO4003Cdielectric constant εr = 3.38
Fig 41. PCB stack
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
28 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
13. Package outline
HVSON8: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 3 x 3 x 0.85 mm
SOT908-1
0
1
2 mm
scale
X
B
D
A
E
A
A1
c
detail X
terminal 1
index area
e1
terminal 1
index area
e
v
w
b
1
4
M
M
C
C A B
C
y1 C
y
L
exposed tie bar (4×)
Eh
exposed tie bar (4×)
8
5
Dh
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
max.
A1
b
c
D(1)
Dh
E(1)
Eh
e
e1
L
v
w
y
y1
mm
1
0.05
0.00
0.3
0.2
0.2
3.1
2.9
2.25
1.95
3.1
2.9
1.65
1.35
0.5
1.5
0.5
0.3
0.1
0.05
0.05
0.1
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
OUTLINE
VERSION
SOT908-1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-09-26
05-10-05
MO-229
Fig 42. Package outline SOT908-1 (HVSON8)
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
29 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
14. Abbreviations
Table 20.
Abbreviations
Acronym
Description
CPE
Customer-Premises Equipment
DC
Direct Current
ESD
ElectroStatic Discharge
HTOL
High Temperature Operating Life
ISM
Industrial, Scientific and Medical
MMIC
Monolithic Microwave Integrated Circuit
MoCA
Multimedia over Coax Alliance
RFID
Radio Frequency IDentification
SMA
SubMiniature version A
TX
Transmit
WLAN
Wireless Local Area Network
15. Revision history
Table 21.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGA7124 v.3
20100909
Product data sheet
-
BGA7124 v.2
Modifications:
•
•
•
•
•
•
Figure 5 on page 11: MSL symbols have been corrected.
Figure 11 on page 14: MSL symbols have been corrected.
Figure 17 on page 16: MSL symbols have been corrected.
Figure 23 on page 19: MSL symbols have been corrected.
Figure 29 on page 22: MSL symbols have been corrected.
Figure 35 on page 25: MSL symbols have been corrected.
BGA7124 v.2
20100623
Product data sheet
-
BGA7124 v.1
BGA7124 v.1
20100421
Product data sheet
-
-
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
30 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
31 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGA7124
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 September 2010
© NXP B.V. 2010. All rights reserved.
32 of 33
BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
18. Contents
1
1.1
1.2
1.3
1.4
2
2.1
2.2
3
4
5
6
7
8
8.1
9
9.1
10
11
12
12.1
12.1.1
12.1.2
12.1.3
12.1.4
12.2
12.2.1
12.2.2
12.3
13
14
15
16
16.1
16.2
16.3
16.4
17
18
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Shutdown control . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Supply current adjustment . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
Scattering parameters . . . . . . . . . . . . . . . . . . . 9
Reliability information . . . . . . . . . . . . . . . . . . . 10
Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 10
Application information. . . . . . . . . . . . . . . . . . 11
5 V applications . . . . . . . . . . . . . . . . . . . . . . . 11
920 MHz to 960 MHz . . . . . . . . . . . . . . . . . . . 11
1930 MHz to 1990 MHz . . . . . . . . . . . . . . . . . 14
2110 MHz to 2170 MHz . . . . . . . . . . . . . . . . . 16
2405 MHz to 2485 MHz . . . . . . . . . . . . . . . . . 19
3.3 V applications . . . . . . . . . . . . . . . . . . . . . . 22
920 MHz to 960 MHz . . . . . . . . . . . . . . . . . . . 22
2405 MHz to 2485 MHz . . . . . . . . . . . . . . . . . 25
PCB stack . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 29
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 30
Legal information. . . . . . . . . . . . . . . . . . . . . . . 31
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 31
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Contact information. . . . . . . . . . . . . . . . . . . . . 32
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 September 2010
Document identifier: BGA7124
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