Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MW6S010N
Rev. 5, 6/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA,
Pout = 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MW6S010NR1
MW6S010GNR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 09, STYLE 1
TO - 270 - 2
PLASTIC
MW6S010NR1
CASE 1265A - 03, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MW6S010GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
RθJC
2.85
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2006, 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A
Machine Model (per EIA/JESD22 - A115)
A
Charge Device Model (per JESD22 - C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 125 mAdc, Measured in Functional Test)
VGS(Q)
2
3.1
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 0.3 Adc)
VDS(on)
—
0.27
0.35
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.32
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
10
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
23
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP, f = 960 MHz, Two - Tone Test,
100 kHz Tone Spacing
Power Gain
Gps
17.5
18
20.5
dB
Drain Efficiency
ηD
31
32
—
%
Intermodulation Distortion
IMD
—
- 37
- 33
dBc
Input Return Loss
IRL
—
- 18
- 10
dB
Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP, 420 - 470 MHz,
Two - Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
33
—
%
Intermodulation Distortion
IMD
—
- 40
—
dBc
Input Return Loss
IRL
—
- 10
—
dB
MW6S010NR1 MW6S010GNR1
2
RF Device Data
Freescale Semiconductor
C11
B1
VBIAS
+
+
C2
C3
C4
C6
C12
C7
C10
C15
+
+
+
C16
C18
C19
C13
L1
RF
INPUT
DUT
R1
Z1
Z2
C1
Z1
Z2
Z3
Z4
Z3
VSUPPLY
Z5
Z6
Z7
RF
OUTPUT
Z4
C14
C5
C8
C17
C20
C9
0.073″ x 0.223″ Microstrip
0.112″ x 0.070″ Microstrip
0.213″ x 0.500″ Microstrip
0.313″ x 1.503″ Microstrip
Z5
Z6
Z7
PCB
0.313″ x 0.902″ Microstrip
0.073″ x 1.080″ Microstrip
0.073″ x 0.314″ Microstrip
Rogers ULTRALAM 2000, 0.031″, εr = 2.55
Figure 1. MW6S010NR1(GNR1) Test Circuit Schematic — 900 MHz
Table 6. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 900 MHz
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair - Rite
C1, C6, C11, C20
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2, C18, C19
22 μF, 35 V Tantalum Capacitors
T491D226K035AT
Kemet
C3, C16
220 μF, 63 V Electrolytic Capacitors, Radial
2222 - 136 - 68221
Vishay
C4, C15
0.1 μF Chip Capacitors
CDR33BX104AKWS
Kemet
C5, C8, C17
0.8 - 8.0 pF Variable Capacitors, Gigatrim
272915L
Johanson
C7, C12
24 pF Chip Capacitors
ATC100B240JT500XT
ATC
C9, C10, C13
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C14
7.5 pF Chip Capacitor
ATC100B7R5JT500XT
ATC
L1
12.5 nH Inductor
A04T - 5
Coilcraft
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
3
C18
C3
C7
C4
C16
C15
C10
C2
B1
C6
C11
C19
C13
C12
L1
R1
C20
C9
C1
C17
C5
C8
C14
MW6S010N
Figure 2. MW6S010NR1(GNR1) Test Circuit Component Layout — 900 MHz
MW6S010NR1 MW6S010GNR1
4
RF Device Data
Freescale Semiconductor
−8
48
ηD
−10
44
−12
40
IRL
−14
36
32
−16
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 125 mA, 100 kHz Tone Spacing
−18
28
−20
24
IMD
−22
20
Gps
−24
16
910
920
930
940
950
−26
970
960
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS — 900 MHz
f, FREQUENCY (MHz)
20
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Two - Tone Wideband Performance
@ Pout = 10 Watts
IDQ = 190 mA
Gps, POWER GAIN (dB)
19
125 mA
18
90 mA
17
VDD = 28 Vdc, f = 945 MHz
Two−Tone Measurements
100 kHz Tone Spacing
16
15
1
10
−40
7th Order
−50
−60
−70
0.1
1
10
100
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Intermodulation Distortion Products
versus Output Power
48
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 125 mA, Two−Tone Measurements
(f1+f2)/2 = Center Frequency = 945 MHz
Ideal
−30
3rd Order
−35
−40
5th Order
−50
−55
0.1
5th Order
−30
Pout, OUTPUT POWER (WATTS) AVG.
−25
−45
3rd Order
Pout, OUTPUT POWER (WATTS) AVG.
−15
−20
VDD = 28 Vdc, IDQ = 125 mA
f = 945 MHz, Two−Tone Measurements
100 kHz Tone Spacing
−20
100
Pout, OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
0.1
−10
P3dB = 43.14 dBm (20.61 W)
46
P1dB = 42.23 dBm (16.71 W)
44
Actual
42
VDD = 28 Vdc, IDQ = 125 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 945 MHz
40
7th Order
38
1
10
100
19
21
23
25
27
29
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
5
50
−10
VDD = 28 Vdc
IDQ = 125 mA
f = 945 MHz
40
−20
30
−30
Gps
20
−40
ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS — 900 MHz
ηD
10
−50
ACPR
0
−60
0.1
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single - Carrier CDMA ACPR, Power
Gain and Power Added Efficiency
versus Output Power
20
50
−30_C
18
TC = −30_C
Gps
85_C
ηD
25_C
40
30
85_C
17
20
16
VDD = 28 Vdc 10
IDQ = 125 mA
f = 945 MHz
0
100
15
0.1
1
10
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
19
25_C
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added
Efficiency versus Output Power
24
19
5
20
0
S21
17
16
−5
12
−10
8
−15
16
28 V
VDD = 24 V
32 V
4
15
0
2
4
6
8
10
12
14
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
16
0
500
S11 (dB)
18
S21 (dB)
Gps, POWER GAIN (dB)
IDQ = 125 mA
f = 945 MHz
S11
VDD = 28 Vdc
Pout = 10 W CW
IDQ = 125 mA
−20
−25
600
700
800
900
1000
1100
1200
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
MW6S010NR1 MW6S010GNR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 10 W PEP, and ηD = 32%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
7
Zo = 25 Ω
f = 980 MHz
f = 980 MHz
Zsource
Zload
f = 800 MHz
f = 800 MHz
VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP
f
MHz
Zsource
Ω
Zload
Ω
800
3.1 + j1.9
10.1 + j2.3
820
2.8 + j1.7
8.3 + j2.5
840
2.7 + j2.2
8.2 + j3.3
860
3.1 + j3.4
9.8 + j4.8
880
3.3 + j3.8
10.6 + j5.6
900
2.9 + j3.7
9.5 + j5.5
920
2.8 + j4.4
10.1 + j5.9
940
3.0 + j4.7
11.0 + j6.4
960
3.2 + j4.9
11.8 + j6.6
980
3.6 + j5.2
12.1 + j7.1
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance — 900 MHz
MW6S010NR1 MW6S010GNR1
8
RF Device Data
Freescale Semiconductor
T1
R1
VBIAS
+
C1
R2
B1
B2
R5
C2
R3
VSUPPLY
+
+
C3
C13
C4
C14
C15
T2
R4
R6
L1
DUT
RF
INPUT
Z1
Z2
Z3
Z4
Z6
Z7
Z5
C10
C5
C7
0.540″
0.365″
0.225″
0.440″
x 0.080″
x 0.080″
x 0.080″
x 0.080″
C6
Z1
Z2
Z3
Z4, Z7
C8
C9
Microstrip
Microstrip
Microstrip
Microstrip
RF
OUTPUT
Z8
Z5
Z6
Z8
PCB
C12
C11
0.475″ x 0.330″ Microstrip
0.475″ x 0.325″ Microstrip
1.250″ x 0.080″ Microstrip
Rogers ULTRALAM 2000, 0.030″, εr = 2.55
Figure 14. MW6S010NR1(GNR1) Test Circuit Schematic — 450 MHz
Table 7. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 450 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Bead
2743019447
Fair - Rite
C1
1 μF, 35 V Tantalum Capacitor
T491C105K050AT
Kemet
C2, C15
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C3, C14
0.1 μF Chip Capacitors
C1210C104K5RAC
Kemet
C4, C9, C10, C13
330 pF Chip Capacitors
ATC700A331JT150XT
ATC
C5
4.3 pF Chip Capacitor
ATC100B4R3JT500XT
ATC
C6, C11
0.6 - 8.0 pF Variable Capacitors
27291SL
Johanson
C7, C8, C12
4.7 pF Chip Capacitors
ATC100B4R7JT500XT
ATC
L1
39 μH Chip Inductor
ISC - 1210
Vishay
R1
10 Ω Chip Resistor
CRCW080510R0FKEA
Vishay
R2
1 kΩ Chip Resistor
CRCW08051001FKEA
Vishay
R3
1.2 kΩ Chip Resistor
CRCW08051201FKEA
Vishay
R4
2.2 kΩ Chip Resistor
CRCW08052201FKEA
Vishay
R5
5 kΩ Potentiometer
1224W
Bourns
R6
1 kΩ Chip Resistor
CRCW12061001FKEA
Vishay
T1
5 Volt Regulator, Micro 8
LP2951CDMR2G
On Semiconductor
T2
NPN Transistor, SOT - 23
BC847ALT1G
On Semiconductor
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
9
R2
R1
R5
T1
B1
R3
T2
R4
C2
C4
C1
B2
C15
C14
C3
C13
C5
C12
C9
C6
C7
R6
L1
C10
C8
C11
MW6S010N 450 MHz
Figure 15. MW6S010NR1(GNR1) Test Circuit Component Layout — 450 MHz
MW6S010NR1 MW6S010GNR1
10
RF Device Data
Freescale Semiconductor
37
34
Gps
Gps, POWER GAIN (dB)
20
19.8
31
28
ηD
VDD = 28 Vdc, Pout = 3 W (Avg.), IDQ = 150 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
19.6
19.4
19.2
25
−40
−45
19
ACPR
IRL
−50
18.8
18.6
18.4
400
−55
ALT1
−60
410
−65
500
420
430
440
450
460
470
480
490
ACPR (dBc), ALT1 (dBc)
20.2
−6
−9
−12
−15
−18
−21
IRL, INPUT RETURN LOSS (dB)
20.4
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 450 MHz
f, FREQUENCY (MHz)
55
Gps
18.3
45
ηD
40
VDD = 28 Vdc, Pout = 7.5 W (Avg.), IDQ = 150 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
18
17.8
35
−30
17.5
17.3
16.5
400
−40
IRL
17
16.8
−35
ACPR
−45
ALT1
410
−50
420
430
440
450
460
470
480
490
−55
500
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
18.5
50
−4
−6
−8
−10
−12
−14
IRL, INPUT RETURN LOSS (dB)
19
18.8
ηD, DRAIN
EFFICIENCY (%)
Figure 16. 2 - Carrier W - CDMA Broadband Performance @ Pout = 3 Watts Avg.
f, FREQUENCY (MHz)
30
25
0
−5
S11
−20
ACPR
−10
20
15
ALT1
−15
ALT2
10
5
VDD = 28 Vdc
Pout = 10 W
IDQ = 150 mA
−30
−40
S11
S21
S21
−10
VDD = 28 Vdc, IDQ = 150 mA,
f = 450 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
−50
−60
−20
−70
−25
50 100 150 200 250 300 350 400 450 500 550 600 650
−80
0.1
1
10
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. Broadband Frequency Response
Figure 19. Single - Carrier N - CDMA ACPR, ALT1
and ALT2 versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1 & ALT2, CHANNEL POWER (dBc)
Figure 17. 2 - Carrier W - CDMA Broadband Performance @ Pout = 7.5 Watts Avg.
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
11
Zo = 25 Ω
f = 500 MHz
Zsource
f = 500 MHz
Zload
f = 400 MHz
f = 400 MHz
VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP
f
MHz
Zsource
Ω
Zload
Ω
400
9.0 + j3.8
15.0 + j1.4
420
8.8 + j5.4
14.3 + j3.3
440
9.6 + j6.6
15.0 + j4.7
460
10.6 + j9.5
16.3 + j7.3
480
10.7 + j12.6
16.4 + j11.1
500
11.5 + j13.9
16.9 + j12.7
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 20. Series Equivalent Source and Load Impedance — 450 MHz
MW6S010NR1 MW6S010GNR1
12
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
13
MW6S010NR1 MW6S010GNR1
14
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
15
MW6S010NR1 MW6S010GNR1
16
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
17
MW6S010NR1 MW6S010GNR1
18
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1949: Mounting Method for the MHVIC910HR2 (PFP - 16) and Similar Surface Mount Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
4
Dec. 2008
Description
• Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for
standardization across products, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in
Capable Plastic Package bullet, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in Functional
Test”, On Characteristics table, p. 2
• Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
• Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part
numbers, p. 3, 9
• Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 13 - 15. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
• Replaced Case Outline 1265A - 02 with 1265A - 03, Issue C, p. 1, 16 - 18. Corrected cross hatch pattern and
its dimensions (D2 and E2) on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3
changed from Min - Max .150 - .180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull - wing foot from 4.90 - 5.06 Min - Max to 0.46 - 0.61 Min - Max. Added JEDEC Standard Package Number.
• Added Product Documentation and Revision History, p. 19
5
June 2009
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 2
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to
Product Documentation, Application Notes, p. 19
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 19
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
19
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140
Fax: +1 - 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2005-2006, 2008-2009. All rights reserved.
MW6S010NR1 MW6S010GNR1
Document Number: MW6S010N
Rev. 5, 6/2009
20
RF Device Data
Freescale Semiconductor