Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8S21100H
Rev. 1, 3/2011
RF Power Field Effect Transistors
MRF8S21100HR3
MRF8S21100HSR3
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
700 mA, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
17.9
33.0
6.4
--38.7
2140 MHz
18.1
33.0
6.4
--38.2
2170 MHz
18.3
33.4
6.3
--37.2
2110--2170 MHz, 24 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 138 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
CASE 465--06, STYLE 1
NI--780
MRF8S21100HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S21100HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW
108
0.57
W
W/°C
Symbol
Value (3,4)
Unit
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77°C, 24 W CW, 28 Vdc, IDQ = 700 mA, 2140 MHz
Case Temperature 80°C, 100 W CW(1), 28 Vdc, IDQ = 700 mA, 2140 MHz
RθJC
0.48
0.45
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S21100HR3 MRF8S21100HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 μAdc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 700 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 700 mAdc, Measured in Functional Test)
VGG(Q)
4.0
5.4
7.0
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 24 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Gps
17.2
18.3
20.2
dB
ηD
31.0
33.4
—
%
PAR
5.9
6.3
—
dB
ACPR
—
--37.2
--36.0
dBc
IRL
—
--12
--7
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 24 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
17.9
33.0
6.4
--38.7
--18
2140 MHz
18.1
33.0
6.4
--38.2
--16
2170 MHz
18.3
33.4
6.3
--37.2
--12
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF8S21100HR3 MRF8S21100HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, 2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
100
—
—
40
—
W
IMD Symmetry @ 36 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
50
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 24 W Avg.
GF
—
0.4
—
dB
Gain Variation over Temperature
(--30°C to +80°C)
∆G
—
0.011
—
dB/°C
∆P1dB
—
0.005
—
dB/°C
Output Power Variation over Temperature
(--30°C to +80°C) (1)
MHz
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S21100HR3 MRF8S21100HSR3
RF Device Data
Freescale Semiconductor
3
R2
R1
VGG
VDD
+
C3
C5
C8
C6
C9
-C12
C1
C4
C2
CUT OUT AREA
R3
C13
C7
C10 C11
MRF8S21100H
Rev 0
Figure 1. MRF8S21100HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S21100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3, C6, C7
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C2
1.6 pF Chip Capacitor
ATC100B1R6BT500XT
ATC
C4
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C5, C8, C9, C10, C11
10 μF, 50 V Tantalum Capacitors
293D106X9050E2TE3
Vishay
C12
220 μF, 50 V Electrolytic Capacitor, Radial
227CKS050M
Illinois Capacitor
C13
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
R1, R2
2 KΩ, 1/4 W Chip Resistors
CRCW12062K00FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
PCB
0.030″, εr = 2.55
AD255A
Arlon
MRF8S21100HR3 MRF8S21100HSR3
4
RF Device Data
Freescale Semiconductor
33.5
33
ηD
18
Gps
32.5
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
17.5
17
PARC
--34
--7.5
--35
--10
16.5
--36
16
--37
IRL
ACPR
15.5
15
2060
2080
--38
2100
2120
2140
2160
2180
2200
ACPR (dBc)
Gps, POWER GAIN (dB)
18.5
34
--39
2220
--12.5
--15
--17.5
--20
--1
--1.2
--1.4
--1.6
--1.8
PARC (dB)
34.5
VDD = 28 Vdc, Pout = 24 W (Avg.), IDQ = 700 mA
19.5 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
19
IRL, INPUT RETURN LOSS (dB)
20
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 24 Watts Avg.
--10
VDD = 28 Vdc, Pout = 36 W (PEP), IDQ = 700 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
--20
IM3--L
--30
IM3--U
IM5--U
--40
IM5--L
IM7--L
--50
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
18.5
0
18
17.5
17
16.5
16
VDD = 28 Vdc, IDQ = 700 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
ACPR
--1
--1 dB = 22 W
--5
PARC
--3 dB = 40 W
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
10
20
30
--25
30
--2 dB = 30 W
--4
60
40
Gps
--3
--20
50
ηD
--2
70
40
50
--30
--35
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
20
--45
10
--50
60
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S21100HR3 MRF8S21100HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
16
2110 MHz
2140 MHz
ηD
ACPR
50
--10
30
14
20
2170 MHz
2140 MHz
10
2110 MHz
10
1
0
40
2170 MHz
12
60
10
100
0
200
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 700 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
20 Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Gps
18
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
22
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
24
Gain
20
5
GAIN (dB)
--5
12
IRL
--10
8
4
0
1800
IRL (dB)
0
16
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 700 mA
1900
2000
--15
2100
2200
2300
2400
2500
--20
2600
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
MRF8S21100HR3 MRF8S21100HSR3
6
RF Device Data
Freescale Semiconductor
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S21100HR3 MRF8S21100HSR3
RF Device Data
Freescale Semiconductor
7
VDD = 28 Vdc, IDQ = 700 mA, Pout = 24 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2060
4.41 -- j6.05
3.03 -- j3.64
2080
4.38 -- j5.67
2.96 -- j3.45
2100
4.33 -- j5.29
2.89 -- j3.26
2120
4.33 -- j4.91
2.83 -- j3.10
2140
4.33 -- j4.54
2.75 -- j2.94
2160
4.33 -- j4.17
2.69 -- j2.75
2180
4.31 -- j3.80
2.62 -- j2.50
2200
4.32 -- j3.39
2.65 -- j2.24
2220
4.35 -- j2.99
2.67 -- j2.04
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S21100HR3 MRF8S21100HSR3
8
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 700 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
56
Ideal
Pout, OUTPUT POWER (dBm)
55
2110 MHz
54
2140 MHz
53
2170 MHz
52
Actual
51
50
2110 MHz
49
2140 MHz
48
2170 MHz
47
46
45
27
28
29
30
31
33
32
34
35
36
37
38
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
2110
141
51.5
166
52.2
2140
141
51.5
162
52.1
2170
138
51.4
158
52.0
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
2110
P1dB
3.50 -- j7.47
1.65 -- j3.64
2140
P1dB
4.21 -- j7.53
1.57 -- j3.70
2170
P1dB
6.39 -- j8.09
1.66 -- j3.68
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S21100HR3 MRF8S21100HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MRF8S21100HR3 MRF8S21100HSR3
10
RF Device Data
Freescale Semiconductor
MRF8S21100HR3 MRF8S21100HSR3
RF Device Data
Freescale Semiconductor
11
MRF8S21100HR3 MRF8S21100HSR3
12
RF Device Data
Freescale Semiconductor
MRF8S21100HR3 MRF8S21100HSR3
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8S21100H and MRF8S21100HS parts will be available for 2 years after release of
MRF8S21100H and MRF8S21100HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF8S21100H and MRF8S21100HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2010
• Initial Release of Data Sheet
1
Mar. 2011
• Corrected VGG(Q) VDD value from 30 Vdc to 28 Vdc in On Characteristics table to reflect actual test
measurement condition, p. 2
MRF8S21100HR3 MRF8S21100HSR3
14
RF Device Data
Freescale Semiconductor
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MRF8S21100HR3 MRF8S21100HSR3
Document
Number:
RF
Device
Data MRF8S21100H
Rev. 1, 3/2011Semiconductor
Freescale
15