MBR60H100CT D

MBR60H100CTG,
MBRB60H100CTT4G,
NRVBB60H100CTT4G
Switch-mode
Power Rectifier
100 V, 60 A
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SCHOTTKY BARRIER
RECTIFIER
60 AMPERES, 100 VOLTS
Features and Benefits
•
•
•
•
•
•
•
Low Forward Voltage: 0.72 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
60 A Total (30 A Per Diode Leg)
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
2, 4
3
MARKING
DIAGRAM
4
TO−220
CASE 221A
STYLE 6
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
1
2
AYWW
B60H100G
AKA
3
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight (Approximately): 1.9 Grams (TO−220)
•
•
•
D2PAK−3
CASE 418B
STYLE 3
1.7 Grams (D2PAK−3)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating:
Human Body Model = 3B
Machine Model = C
A
Y
WW
B60H100
G
AKA
AYWW
B60H100G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
Package
Shipping†
MBR60H100CTG
TO−220
(Pb−Free)
50 Units/Rail
MBRB60H100CTT4G
D2PAK−3
(Pb−Free)
800/
Tape & Reel
NRVBB60H100CTT4G
D2PAK−3
(Pb−Free)
800/
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 6
1
Publication Order Number:
MBR60H100CT/D
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
Per Diode
(TC = 155°C)
Per Device
IF(AV)
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 151°C)
IFRM
60
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
350
A
Operating Junction Temperature (Note 1)
TJ
+175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
400
mJ
> 400
> 8000
V
A
30
60
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
WAVAL
ESD Ratings: Machine Model = C
Human Body Model = 3B
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
RqJC
RqJA
1.0
70
Unit
°C/W
Maximum Thermal Resistance
Junction−to−Case (Min. Pad)
Junction−to−Ambient (Min. Pad)
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 30 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 60 A, TJ = 25°C)
(iF = 60 A, TJ = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
iR
Min
Typ
Max
−
−
−
−
0.80
0.68
0.93
0.81
0.84
0.72
0.98
0.84
−
−
2.0
0.0013
10
0.01
Unit
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
TYPICAL CHARACTERISTICS
100
175°C
10
TJ = 150°C
125°C
1.0
25°C
0.1
0.0 0.1
0.2 0.3
0.4 0.5
0.6 0.7
0.8
0.9
1.0 1.1
1.2
100
175°C
10
TJ = 150°C
1.0
25°C
0.1
0.0 0.1
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IR, MAXIMUM REVERSE CURRENT (AMPS)
1E−03
TJ = 125°C
1E−04
1E−05
TJ = 25°C
1E−07
60
40
80
100
1.0 1.1
TJ = 125°C
1E−03
1E−04
1E−05
TJ = 25°C
1E−06
1E−07
1E−08
0
20
40
60
80
Figure 4. Maximum Reverse Current
, AVERAGE FORWARD CURRENT (AMPS)
SQUARE WAVE
28
24
20
16
12
8.0
140
145
150
155
160
165
170
1.2
TJ = 150°C
Figure 3. Typical Reverse Current
dc
135
0.9
VR, REVERSE VOLTAGE (VOLTS)
32
4.0
0
130
0.8
VR, REVERSE VOLTAGE (VOLTS)
48
44
40
36
0.6 0.7
1E−02
F (AV)
, AVERAGE FORWARD CURRENT (AMPS)
F (AV)
I
20
1E−01
175
I
IR, REVERSE CURRENT (AMPS)
TJ = 150°C
1E−08
0
0.4 0.5
Figure 2. Maximum Forward Voltage
1E−01
1E−06
0.2 0.3
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1E−02
125°C
180
26
24
22
20
18
16
14
12
10
8.0
6.0
4.0
2.0
0
RATED VOLTAGE APPLIED
RqJA = 16° C/W
RqJA = 70° C/W
(NO HEATSINK)
dc
SQUARE WAVE
dc
0
TC, CASE TEMPERATURE (C°)
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Case Per Leg
Figure 6. Current Derating, Ambient Per Leg
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3
100
175
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
60
56
52
48
44
40
36
32
28
24
20
16
12
8
4
0
10000
TJ = 25°C
TJ = 175°C
SQUARE WAVE
C, CAPACITANCE (pF)
P
, AVERAGE FORWARD POWER DISSIPATION (WATTS)
F (AV)
TYPICAL CHARACTERISTICS
dc
1000
100
10
0
4
8
12 16 20 24 28 32 36 40 44 48 52 56 60
0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
20
40
60
80
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Forward Power Dissipation
Figure 8. Capacitance
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4
100
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
ID
ID
IL
DUT
S1
VDD
t0
Figure 9. Test Circuit
t1
t2
t
Figure 10. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 9 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
V
BV
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
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5
Ǔ
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
PACKAGE DIMENSIONS
D2PAK−3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
3
S
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
H
T B
M
M
N
R
M
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
P
U
L
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
6
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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MBR60H100CT/D