Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF6P24190H
Rev. 3, 2/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for large - signal output applications at 2450 MHz. Device
is suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1900 mA,
Pout = 190 Watts
Power Gain — 13.2 dB
Drain Efficiency — 46.2%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P24190HR6
2450 MHz, 190 W, 28 V
CW
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW
250
1.3
W
W/°C
Symbol
Value (2,3)
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
RθJC
Unit
°C/W
0.22
0.24
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P24190HR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage (3)
(VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage (1)
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
1.5
—
pF
Off Characteristics
(1)
On Characteristics
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg., f = 2390 MHz, 2 - Carrier
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
14
16
dB
Drain Efficiency
ηD
22
23.5
—
%
Intermodulation Distortion
IM3
—
- 37.5
- 35
dBc
ACPR
—
- 41
- 38
dBc
IRL
—
- 13
—
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
MRF6P24190HR6
2
RF Device Data
Freescale Semiconductor
VSUPPLY
+
R1
C7
B1
C10
VBIAS
+
+
C12
C11
C5
C9
B2
Z6
Z4
RF
INPUT Z1
Z2
C17
C18
C19
C20 C21
C27
Z28
Z16
Z18
Z20
Z22
Z14
Z8
Z10
C3
Z12
C1
Z3
Z24
Z25
Z26
RF
OUTPUT
Z27
DUT
Z5
Z7
Z9
Z11
Z13
C2
Z17
Z19
Z21
Z23
Z15
C4
R2
C14
VBIAS
+
+
C16
C15
B3
C13
Z29
C6
B4
+
C8
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14
Z15
0.340″
0.080″
0.895″
1.736″
0.151″
0.505″
0.570″
0.072″
0.078″
0.664″
0.680″
x 0.081″
x 0.526″
x 0.135″
x 0.074″
x 0.074″
x 0.081″
x 0.282″
x 0.500″
x 0.500″
x 0.050″
x 0.050″
Z16, Z17
Z18, Z19
Z20, Z21
Z22
Z23
Z24
Z25
Z26
Z27
Z28, Z29
PCB
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
C22
C23
C24
C25 C26
VSUPPLY
C28
0.189″ x 0.782″ Microstrip
0.321″ x 0.782″ Microstrip
0.630″ x 0.081″ Microstrip
0.150″ x 0.081″ Microstrip
1.728″ x 0.085″ Microstrip
0.122″ x 0.135″ Microstrip
0.250″ x 0.300″ Microstrip
0.563″ x 0.135″ Microstrip
0.380″ x 0.081″ Microstrip
0.305″ x 0.057″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6P24190HR6 Test Circuit Schematic — 2450 MHz
Table 5. MRF6P24190HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2, B3, B4
Ferrite Beads
2508051107Y0
Fair - Rite
C1, C2, C3, C4
5.1 pF, Chip Capacitors
ATC100B5R1CT500XT
ATC
C5, C6, C7, C8
5.6 pF, Chip Capacitors
ATC100B5R6CT500XT
ATC
C9, C13
0.01 μF, 100 V Chip Capacitors
C1825C103J1RAC
Kemet
C10, C14, C17, C22
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C11, C15
22 μF, 25 V Tantalum Capacitors
T491D226K025AT
Kemet
C12, C16
47 μF, 16 V Tantalum Capacitors
T491D476K016AT
Kemet
C18, C19, C20, C21, C23,
C24, C25, C26
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C27, C28
330 μF, 63 V Electrolytic Capacitors
NACZF331M63V
Nippon
R1, R2
240 Ω, 1/4 W Chip Resistors
CRCW12062400FKEA
Vishay
MRF6P24190HR6
RF Device Data
Freescale Semiconductor
3
C12 C11
+
C10*
C9*
+
+
R1
C20 C21
B1
B2
C27
C5
C17 C18 C19
C7
C3
C1
C2
C6
MRF6P24190H
Rev. 1.0
B3
CUT OUT AREA
C4
C8
B4
+
C22 C23 C24
+
+
R2
C16 C15
C14* C13*
C28
C25 C26
*Stacked
Figure 2. MRF6P24190HR6 Test Circuit Component Layout — 2450 MHz
MRF6P24190HR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2450 MHz
45
14
40
13.5
IDQ = 1900 mA
f = 2450 MHz
13
35
30
12.5
25
12
32 V
VDD = 12 V
11.5
ηD
11
20
30 V
28 V
32 V
30 V
10
1600 mA
1500 mA
13
2200 mA
12.5
12
11.5
VDD = 28 V
f = 2450 MHz
11
10
500
100
1900 mA
13.5
15
10.5
2100 mA
Gps
10.5
10
100
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
14.5
50
Gps
Gps, POWER GAIN (dB)
300
14
45
13.5
40
13
35
12.5
30
12
25
VDD = 28 V
IDQ = 1900 mA
f = 2450 MHz
11.5
ηD
11
20
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
14.5
Gps, POWER GAIN (dB)
Gps
14
50
ηD, DRAIN EFFICIENCY (%)
14.5
15
10.5
10
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency
versus CW Output Power
108
MTTF (HOURS)
107
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 190 W CW, and ηD = 46.2%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 6. MTTF versus Junction Temperature
MRF6P24190HR6
RF Device Data
Freescale Semiconductor
5
Zo = 25 Ω
Zload
Zsource
f = 2450 MHz
f = 2450 MHz
VDD = 28 Vdc, IDQ = 1900 mA, Pout = 190 W CW
f
MHz
Zsource
W
Zload
W
2450
12.72 - j8.48
2.75 - j4.85
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 7. Series Equivalent Source and Load Impedance
MRF6P24190HR6
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
A
bbb
G 4
1
2
3
4
T A
B
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
B
(FLANGE)
4X
K
M
B
L
4X
Q
A
D
aaa
M
T A
M
B
M
ccc
ccc
T A
M
M
B
M
T A
M
B
M
R
M
(LID)
N
(LID)
F
H
C
E
PIN 5
M
(INSULATOR)
bbb
M
T A
M
B
S
T
SEATING
PLANE
(INSULATOR)
bbb
M
T A
M
M
B
M
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.082
0.090
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.08
2.29
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375D - 05
ISSUE E
NI - 1230
MRF6P24190HR6
RF Device Data
Freescale Semiconductor
7
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Dec. 2006
• Initial Release of Data Sheet
1
Mar. 2007
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Added maximum CW operation limitation and derating values to the Maximum Rating table to prevent a
200°C+ hot wire operating condition, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
• Added frequency to title of schematic, component part layout and typical characteristic curves, p. 3 - 5
• Added Fig. 6, MTTF versus Junction Temperature graph, p. 5
2
Apr. 2008
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
3
Feb. 2009
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 2
MRF6P24190HR6
8
RF Device Data
Freescale Semiconductor
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Document Number: MRF6P24190H
Rev. 3, 2/2009
RF Device Data
Freescale Semiconductor
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MRF6P24190HR6
9