Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF6P27160H
Rev. 2, 12/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2600 to
2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
• Typical Single- Carrier N - CDMA Performance: VDD = 28 Volts, IDQ =
1800 mA, Pout = 35 Watts Avg., f = 2660 MHz, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.6 dB
Drain Efficiency — 22.6%
ACPR @ 885 kHz Offset — - 47.8 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P27160HR6
2600- 2700 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +68
Vdc
Gate- Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 160 W CW
Case Temperature 71°C, 35 W CW
RθJC
0.29
0.31
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 250 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage (3)
(VDD = 28 Vdc, ID = 1800 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain- Source On - Voltage (1)
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
—
0.21
0.3
Vdc
Crss
—
2.8
—
pF
Characteristic
Off Characteristics
(1)
On Characteristics
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1800 mA, Pout = 35 W Avg. N - CDMA, f = 2660 MHz,
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
14.6
16
dB
Drain Efficiency
ηD
20
22.6
—
%
ACPR
—
- 47.8
- 45
dBc
IRL
—
- 13
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
MRF6P27160HR6
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
Z35
R1
+
+
C7
C6
C5
C4
Z37
C3
C15
C16
C17
+
+
C18
C19
VSUPPLY
Z17 Z19 Z21 Z23 Z25 Z27 Z29
Z5
Z3
RF
INPUT Z1
Z7
Z9
Z11
Z13
Z31
C13
Z15
RF
OUTPUT
Z32 Z33
C1
DUT
Z4
Z2
Z6
Z8
Z10
Z12
Z14
C2
Z16 Z18 Z20 Z22 Z24 Z26 Z28
Z30
C14
B2
VBIAS
Z34
R2
+
+
C12 C11
Z1
Z2, Z30
Z3, Z31
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z36
C10 C9
C20
C8
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z32
Z33
Z34, Z35
Z36, Z37
PCB
1.011″ x 0.139″ Microstrip
0.150″ x 0.070″ Microstrip
1.500″ x 0.086″ Microstrip
0.050″ x 0.230″ Microstrip
0.170″ x 0.080″ Microstrip
0.144″ x 0.340″ Microstrip
0.400″ x 0.210″ Microstrip
0.280″ x 0.710″ Microstrip
0.461″ x 0.490″ Microstrip
0.357″ x 0.766″ Microstrip
0.284″ x 0.415″ Microstrip
C21
C22
+
+
C23
C24
VSUPPLY
0.160″ x 0.760″ Microstrip
0.240″ x 0.150″ Microstrip
0.170″ x 0.420″ Microstrip
0.260″ x 0.080″ Microstrip
0.040″ x 0.258″ Microstrip
0.622″ x 0.139″ Microstrip
0.346″ x 0.081″ Microstrip
0.801″ x 0.050″ Microstrip
0.460″ x 0.095″ Microstrip
Arlon GX - 0300- 5022, 0.030″, εr = 2.5
Figure 1. MRF6P27160HR6 Test Circuit Schematic
Table 5. MRF6P27160HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Beads, Surface Mount
2743019447
Fair- Rite
C1, C2
5.6 pF Chip Capacitors
ATC100B5R6CT500XT
ATC
C3, C8, C15, C20
3.3 pF Chip Capacitors
ATC100B3R3CT500XT
ATC
C4, C9
0.01 μF Chip Capacitors
C1825C103J1RAC
Kemet
C5, C10
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C6, C11
22 μF, 25 V Tantalum Chip Capacitors
T491D226K025AT
Kemet
C7, C12
47 μF, 16 V Tantalum Chip Capacitors
T491D476K016AT
Kemet
C13, C14
4.3 pF Chip Capacitors
ATC100B4R3CT500XT
ATC
C16, C17, C21, C22
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C18, C23
47 μF, 50 V Electrolytic Capacitors
EMVY500ADA470MF80G
Chemi- Con
C19, C24
330 μF, 63 V Electrolytic Capacitors
EMVY630GTR331MMH0S
Chemi- Con
R1, R2
3.3 W, 1/3 W Chip Resistors
CRCW121003R3FKEA
Vishay
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
3
C17
C7 C6
R1
B1
+
C18
C15
C3
-
C16
C5* C4*
C19
C1
C13
CUT OUT AREA
C10*
C9*
C14
MRF6P27160H
Rev 5
C20
C24
C21
-
C2
C8
R2
C12 C11
*Stacked
C23
+
B2
C22
Figure 2. MRF6P27160HR6 Test Circuit Component Layout
MRF6P27160HR6
4
RF Device Data
Freescale Semiconductor
23
ηD
Gps, POWER GAIN (dB)
15.6
22
21
15.4
20
15.2 VDD = 28 Vdc, Pout = 35 W (Avg.),
15 IDQ = 1800 mA, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
14.8
14.6
Gps
IRL
−40
−45
−50
ACPR
14.4
ALT1
14.2
−55
−60
−65
14
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
−10
−11
−12
−13
−14
−15
IRL, INPUT RETURN LOSS (dB)
24
ACPR (dBc), ALT1 (dBc)
16
15.8
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 35 Watts Avg.
35
14.9
14.8
14.7
ηD
32
ACPR
31
30
−30
−35
14.6
IRL
14.5
14.4
−40
−45
ALT1
14.3
14.2
−50
−55
14.1
−60
14
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
−10
−11
−12
−13
−14
−15
−16
IRL, INPUT RETURN LOSS (dB)
34
33
15.1
15
ηD, DRAIN
EFFICIENCY (%)
VDD = 28 Vdc, Pout = 70 W (Avg.),
IDQ = 1800 mA, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
Gps
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
15.2
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 70 Watts Avg.
17
Gps, POWER GAIN (dB)
16
2250 mA
1800 mA
15
1350 mA
14
13
12
0.1
900 mA
VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
400
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−20
IDQ = 2700 mA
VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−30
2700 mA
IDQ = 900 mA
−40
−50
2250 mA
1800 mA
−60
1350 mA
0.1
1
100
10
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
5
−10
58
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1800 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2645 MHz
Ideal
3rd Order
−30
5th Order
−40
P3dB = 54.32 dBm (270.33 W)
57
Pout, OUTPUT POWER (dBm)
−20
−50
7th Order
56
55
P1dB = 53.64 dBm (231.15 W)
54
Actual
53
52
VDD = 28 Vdc, IDQ = 1800 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2645 MHz
51
−60
0.1
50
10
1
34
100
35
36
38
37
39
40
41
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
35
42
−35
VDD = 28 Vdc, IDQ = 1800 mA, f = 2645 MHz
Single−Carrier N−CDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB @ 0.01%
Probability (CCDF)
30
25
−40
−45
−50
20
Gps
−55
15
−60
10
ACPR (dBc), ALT1 (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
ALT1
5
ACPR
ηD
−65
0
1
−70
100
10
Pout, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 9. Single - Carrier N - CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
50
40
10
30
20
5
VDD = 28 Vdc
IDQ = 1800 mA
f = 2645 MHz
0
ηD
−5
0.1
1
10
100
10
0
400
15
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
Gps
15
16
ηD, DRAIN EFFICIENCY (%)
20
14
13
32 V
28 V
12
VDD = 24 V
11
IDQ = 1800 mA
f = 2645 MHz
10
0
60
120
180
240
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
300
MRF6P27160HR6
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 35 W Avg., and ηD = 22.6%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
N - CDMA TEST SIGNAL
−10
100
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. ALT1 Measured in 12.5 kHz
Bandwidth @ ±1.25 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
0.0001
0
2
4
6
−60
−70
−80
−90
8
PEAK−TO−AVERAGE (dB)
Figure 13. Single - Carrier CCDF N - CDMA
10
1.2288 MHz
Channel BW
................................................
.. .. . ..
.............
..
...
..
.. +ALT1 in 12.5 kHz
−ALT1 in 12.5 kHz ...
.
. Integrated BW
Integrated BW ..
..
.
..
...
.
..
.
......
.......................
...
..........
....
...
.
.
..
.
.
.
.
................
........ ...
.
.
...............
............
........
..
..............
.........
..
.
.........
.... .
.
.
.
.
. ..........
.
................
..............
.
.
..
.
..
.
.
.
.
.
..
....
.
.............
.
−ACPR
in
30
kHz
+ACPR
in
30
kHz
.
.
.
...
..
.
.
.
.
.
.
.
.
.
.
....................
.....
......
Integrated BW
Integrated BW
................
..
......
...............
.....
........
.......
...
−100
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 14. Single - Carrier N - CDMA Spectrum
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
7
Zo = 10 Ω
f = 2600 MHz
f = 2700 MHz
Zload
Zsource
f = 2700 MHz
f = 2600 MHz
VDD = 28 Vdc, IDQ = 1800 mA, Pout = 35 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2600
6.90 + j0.61
5.24 + j2.46
2610
6.85 + j0.63
5.69 + j2.04
2620
6.76 + j0.59
5.71 + j1.59
2630
6.50 + j0.59
5.62 + j1.48
2640
6.13 + j0.56
5.45 + j1.42
2645
5.95 + j0.69
5.38 + j1.49
2650
5.81 + j0.83
5.31 + j1.58
2660
5.61 + j1.15
5.24 + j1.81
2670
5.69 + j1.48
5.45 + j2.09
2680
5.91 + j1.67
5.84 + j2.22
2690
6.12 + j1.68
6.22 + j2.12
2700
6.17 + j1.60
6.49 + j1.92
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6P27160HR6
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
A
bbb
G 4
1
2
3
4
T A
B
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
B
(FLANGE)
4X
K
M
B
L
4X
Q
A
D
aaa
M
T A
M
B
M
ccc
ccc
M
T A
M
B
M
T A
M
B
M
R
M
(LID)
N
(LID)
F
H
C
E
PIN 5
M
(INSULATOR)
bbb
M
T A
M
B
S
T
SEATING
PLANE
(INSULATOR)
bbb
M
T A
M
M
B
M
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.082
0.090
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.08
2.29
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375D - 05
ISSUE E
NI - 1230
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Dec. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table; related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Changed “Z2, Z31” to “Z2, Z30” and “Z3, Z30” to “Z3, Z31” in Z list for Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s
capabilities, p. 5
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 10
MRF6P27160HR6
10
RF Device Data
Freescale Semiconductor
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