Datasheet Download

RE1J002YN
Nch 50V 200mA Small Signal MOSFET
Datasheet
lOutline
VDSS
50V
RDS(on) (Max.)
2.2W
ID
200mA
PD
150mW
lFeatures
(3)
EMT3F
SOT-416FL
(1)
(2)
lInner circuit
1) Low voltage drive(0.9V) makes this
(1) Gate
(2) Source
(3) Drain
device ideal for partable equipment.
2) Drive circuits can be simple.
3) Built-in G-S Protection Diode.
*1 BODY DIODE
*2 ESD PROTECTION DIODE
lPackaging specifications
Packaging
Taping
Reel size (mm)
lApplication
180
Tape width (mm)
Switching
8
Type
Basic ordering unit (pcs)
3,000
Taping code
TL
Marking
QJ
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
50
V
Continuous drain current
ID *1
200
mA
ID,pulse *2
800
mA
Gate - Source voltage
VGSS
8
V
Power dissipation
PD *3
150
mW
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Junction temperature
Range of storage temperature
lThermal resistance
Values
Parameter
Symbol
RthJA *3
Thermal resistance, junction - ambient
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© 2012 ROHM Co., Ltd. All rights reserved.
1/10
Unit
Min.
Typ.
Max.
-
-
833
°C/W
2012.08 - Rev.A
Data Sheet
RE1J002YN
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Drain - Source breakdown
voltage
Symbol
Conditions
Unit
Min.
Typ.
Max.
V(BR)DSS
VGS = 0V, ID = 1mA
50
-
-
V
Zero gate voltage drain current
IDSS
VDS = 50V, VGS = 0V
-
-
1
mA
Gate - Source leakage current
IGSS
VGS = 8V, VDS = 0V
-
-
10
mA
VGS (th)
VDS = 10V, ID = 1mA
0.3
-
0.8
V
VGS=4.5V, ID=200mA
-
1.6
2.2
VGS=2.5V, ID=200mA
-
1.7
2.4
VGS=1.5V, ID=200mA
-
2.0
2.8
VGS=1.2V, ID=100mA
-
2.2
3.3
VGS=0.9V, ID=10mA
-
3.0
9.0
VGS=4.5V, ID=200mA, Tj=125°C
-
2.7
3.8
200
-
-
Gate threshold voltage
Static drain - source
on - state resistance
Transconductance
RDS(on) *4
gfs *4
VDS=10V, ID=200mA
W
mS
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Each therminal mounted on a recommended land
*4 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/10
2012.08 - Rev.A
Data Sheet
RE1J002YN
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
26
-
Output capacitance
Coss
VDS = 10V
-
6
-
Reverse transfer capacitance
Crss
f = 1MHz
-
3
-
VDD ⋍ 25V, VGS = 4.5V
-
5
-
tr *4
ID = 100mA
-
8
-
td(off) *4
RL = 249W
-
17
-
tf *4
RG = 10W
-
43
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *4
pF
ns
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Continuous source current
Symbol
IS *1
Pulsed source current
ISM *2
Forward voltage
VSD
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© 2012 ROHM Co., Ltd. All rights reserved.
*4
Conditions
Unit
Min.
Typ.
Max.
-
-
125
mA
-
-
800
mA
-
-
1.2
V
Tc = 25C
VGS = 0V, Is = 200mA
3/10
2012.08 - Rev.A
Data Sheet
RE1J002YN
lElectrical characteristic curves
Fig.2 Drain Current Derating Curve
120
1.2
100
1
Drain Current Dissipation
: ID/ID max. (%)
Power Dissipation : PD/PD max. [%]
Fig.1 Power Dissipation Derating Curve
80
60
40
20
0.8
0.6
0.4
0.2
0
0
0
50
100
150
-25
200
Junction Temperature : Tj [°C]
0
25
50
75
125
150
Junction Temperature : Tj [°C]
Fig.3 Typical Output Characteristics(I)
Fig.4 Typical Output Characteristics(II)
0.2
0.2
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 4.5V
VGS= 0.9V
0.1
VGS= 0.8V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
Drain Current : ID [A]
Drain Current : ID [A]
100
Ta=25ºC
Pulsed
VGS= 0.9V
0.1
VGS= 0.8V
Ta=25ºC
Pulsed
VGS= 0.7V
VGS= 0.7V
0
0
0
0.2
0.4
0.6
0.8
0
1
Drain - Source Voltage : VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
2
4
6
8
10
Drain - Source Voltage : VDS [V]
4/10
2012.08 - Rev.A
Data Sheet
RE1J002YN
lElectrical characteristic curves
Fig.6 Typical Transfer Characteristics
1
80
VDS= 10V
Pulsed
VGS = 0V
ID = 1mA
Pulsed
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
Fig.5 Breakdown Voltage
vs. Junction Temperature
60
40
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.01
0.001
20
-50
0
50
100
0
150
0.2
0.6
0.8
1
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [°C]
Fig.8 Transconductance vs. Drain Current
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
3
10
VDS= 10V
Pulsed
VDS = 10V
ID = 1mA
Pulsed
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
0.4
2
1
0
50
100
150
Junction Temperature : Tj [°C]
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Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
0.01
0
-50
1
0.1
1
Drain Current : ID [A]
5/10
2012.08 - Rev.A
Data Sheet
RE1J002YN
lElectrical characteristic curves
Fig.9 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
10000
Ta=25ºC
Pulsed
ID= 0.01A
4000
ID= 0.20A
3000
2000
1000
0
0
2
4
6
8
Static Drain - Source On-State Resistance
: RDS(on) [W]
5000
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.10 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Ta=25ºC
Pulsed
1000
.
100
0.001
Gate - Source Voltage : VGS [V]
0.1
1
Drain Current : ID [A]
Fig.11 Static Drain - Source On - State
Resistance vs. Junction Temperature
3
Fig.12 Static Drain - Source On - State
Resistance vs. Drain Current(II)
10000
2
1
VGS = 4.5V
ID = 200mA
Pulsed
0
-50 -25
0
25
50
75
100 125 150
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
0.01
VGS= 0.9V
VGS= 1.2V
VGS= 1.5V
VGS= 2.5V
VGS= 4.5V
1000
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
0.001
0.01
0.1
1
Drain Current : ID [A]
Junction Temperature : Tj [ºC]
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VGS = 4.5V
Pulsed
6/10
2012.08 - Rev.A
Data Sheet
RE1J002YN
lElectrical characteristic curves
Fig.13 Static Drain-Source On-State
Resistance vs. Drain Current(III)
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
10000
VGS = 2.5V
Pulsed
1000
100
0.001
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
0.1
1
10
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
10000
VGS = 1.5V
Pulsed
1000
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
0.001
Drain Current : ID [A]
1
10
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(VI)
VGS = 1.2V
Pulsed
1000
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
0.1
1
10
Static Drain - Source On-State Resistance
: RDS(on) [W]
10000
10000
Static Drain - Source On-State Resistance
: RDS(on) [W]
0.1
Drain Current : ID [A]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(V)
100
0.001
0.01
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1000
100
0.001
0.01
0.1
1
10
Drain Current : ID [A]
Drain Current : ID [A]
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VGS = 0.9V
Pulsed
7/10
2012.08 - Rev.A
Data Sheet
RE1J002YN
lElectrical characteristic curves
Fig.18 Switching Characteristics
Fig.17 Typical Capacitance
vs. Drain - Source Voltage
1000
1000
td(off)
Switching Time : t [ns]
Capacitance : C [pF]
Ta=25ºC
f=1MHz
VGS=0V
100
Ciss
10
Crss
1
0.1
10
td(on)
Coss
0.01
tf
100
1
10
1
0.01
100
Ta=25ºC
VDD= 25V
VGS= 4.5V
RG=10W
Pulsed
tr
0.1
1
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.19 Source Current
vs. Source Drain Voltage
1
Source Current : IS [A]
VGS=0V
Pulsed
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
0
0.5
1
1.5
Source-Drain Voltage : VSD [V]
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8/10
2012.08 - Rev.A
Data Sheet
RE1J002YN
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
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Fig.1-2 Switching Waveforms
9/10
2012.08 - Rev.A
Data Sheet
RE1J002YN
lDimensions (Unit : mm)
D
A
x
S A
HE
E
L
Lp
EMT3F
b
c
e
e1
A1
l1
A
A2
e
S
b2
Patterm of terminal position areas
DIM
A
A1
A2
b
c
D
E
e
HE
L
Lp
x
MILIMETERS
MIN
MAX
0.65
0.85
0.00
0.10
0.60
0.80
0.21
0.36
0.08
0.18
1.50
1.70
0.76
0.96
0.50
1.50
1.70
0.37
0.35
0.55
0.10
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.05
0.46
0.65
INCHES
MIN
MAX
0
0.024
0.008
0.003
0.059
0.03
0.004
0.031
0.014
0.007
0.067
0.038
0.02
0.059
0.067
0.015
0.014
-
0.022
0.004
INCHES
MIN
-
MAX
0.041
0.018
0.026
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
10/10
2012.08 - Rev.A
Notice
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
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Please be sure to implement in your equipment using the Products safety measures to guard
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A
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