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Data Sheet
0.9V Drive Nch MOSFET
RYC002N05
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
SST3
<SOT-23>
Features
1) High speed switing.
2) Small package(SST3).
3)Ultra low voltage drive(0.9V drive).
Abbreviated symbol : QJ
 Application
Switching
 Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RYC002N05
 Inner circuit
Taping
T316
3000

(3)
∗1
∗2
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
VGSS
ID
IDP *1
IS
Pulsed
ISP
PD
Power dissipation
Channel temperature
Range of storage temperature
*1
*2
Limits
Unit
50
8
200
V
V
mA
800
150
800
mA
mA
mA
200
mW
Tch
Tstg
150
55 to 150
C
C
Symbol
Limits
Unit
625
C / W
(1) Source
(2) Gate
(3) Drain
(2)
(1)
∗1 BODY DIODE
∗2 ESD PROTECTION DIODE
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
 Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
* Each terminal mounted on a recommended land.
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1/6
2011.03 - Rev.A
Data Sheet
RYC002N05
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
IGSS
Drain-source breakdown voltage V (BR)DSS
Min.
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=8V, VDS=0V
50
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=50V, VGS=0V
VGS (th)
0.3
-
0.8
V
VDS=10V, ID=1mA
-
1.6
2.2
-
1.7
2.4
-
2.0
2.8
-
2.2
3.3
ID=100mA, VGS=1.2V
-
3.0
9.0
ID=10mA, VGS=0.9V
l Yfs l*
0.2
-
-
Input capacitance
Ciss
-
26
-
pF
VDS=10V
Output capacitance
Coss
-
6
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
3
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
5
-
ns
ID=100mA, VDD 25V
tr *
-
8
-
ns
VGS=4.5V
td(off) *
tf *
-
17
43
-
ns
ns
RL=250
RG=10
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Rise time
Turn-off delay time
Fall time
RDS (on)*
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V

S
ID=200mA, VGS=1.5V
ID=200mA, VDS=10V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=200mA, VGS=0V
*Pulsed
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© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.03 - Rev.A
Data Sheet
RYC002N05
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Typical Output Characteristics(Ⅱ)
0.2
0.2
0.15
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
0.1
VGS= 0.9V
VGS= 0.8V
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
0.15
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
Ta=25°C
Pulsed
VGS= 0.9V
0.1
Ta=25°C
Pulsed
0.05
0.05
VGS= 0.7V
VGS= 0.7V
0
0
0.2
0.4
0.6
0.8
0
1
0
2
DRAIN-SOURCE VOLTAGE : VDS[V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
DRAIN CURRENT : ID[A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.01
0
0.2
0.4
0.6
0.8
1000
.
100
0.001
1
10
0.01
VGS= 0.9V
VGS= 1.2V
VGS= 1.5V
VGS= 2.5V
VGS= 4.5V
0.1
1
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
10000
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10000
VGS= 2.5V
Pulsed
VGS= 4.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
8
Ta=25°C
Pulsed
GATE-SOURCE VOLTAGE : VGS[V]
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
6
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
10000
VDS= 10V
Pulsed
0.1
4
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.3 Typical Transfer Characteristics
1
0.001
VGS= 0.8V
0.01
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
1
DRAIN-CURRENT : ID[A]
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1000
0.01
0.1
1
DRAIN-CURRENT : ID[A]
3/6
2011.03 - Rev.A
Data Sheet
RYC002N05
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
10000
VGS= 1.5V
Pulsed
VGS= 1.2V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
10000
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
1
0.01
DRAIN-CURRENT : ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅵ)
1
Fig.10 Forward Transfer Admittance
vs. Drain Current
10
10000
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
VGS= 0.9V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
0.1
DRAIN-CURRENT : ID[A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
100
0.001
0.01
0.1
1
VDS= 10V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
0.01
0.1
1
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
5000
1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
SOURCE CURRENT : Is [A]
VGS=0V
Pulsed
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.01
0
0.5
1
4000
ID= 0.01A
3000
ID= 0.20A
2000
1000
0
1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
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Ta=25°C
Pulsed
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : VGS[V]
4/6
2011.03 - Rev.A
Data Sheet
RYC002N05
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.13 Switching Characteristics
1000
Ta=25°C
VDD=25V
VGS=4.5V
RG=10Ω
Pulsed
100
4
GATE-SOURCE VOLTAGE : VGS [V]
SWITCHING TIME : t [ns]
tf
td(off)
10
td(on)
1
0.01
3
2
1
tr
0.1
0
1
0
0.5
1
1.5
TOTAL GATE CHARGE : Qg [nC]
DRAIN-CURRENT : ID[A]
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
1000
CAPACITANCE : C [pF]
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
10
Crss
Coss
1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.03 - Rev.A
Data Sheet
RYC002N05
 Measurement circuits
Pulse width
VGS
ID
VDS
RL
50%
10%
D.U.T.
RG
90%
50%
10%
VGS
VDS
VDD
90%
td(on)
tr
ton
Fig.1-1 Switching Time Measurement Circuit
10%
90%
td(off)
tf
toff
Fig.1-2 Switching Waveforms
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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6/6
2011.03 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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