Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMRF5014H
Rev. 1, 9/2015
RF Power GaN on SiC Transistor
MMRF5014H
Depletion Mode HEMT
This 125 W CW RF power transistor is optimized for wideband operation up to
2700 MHz and includes input matching for extended bandwidth performance.
With its high gain and high ruggedness, this device is ideally suited for CW,
pulse and wideband RF applications.
This part is characterized and performance is guaranteed for applications
operating in the 1–2700 MHz band. There is no guarantee of performance when
this part is used in applications designed outside of these frequencies.
1–2700 MHz, 125 W CW, 50 V
WIDEBAND
RF POWER GaN ON SiC
TRANSISTOR
Typical Narrowband Performance: VDD = 50 Vdc, IDQ = 350 mA, TA = 25°C
Frequency
(MHz)
Signal Type
Pout
(W)
Gps
(dB)
ηD
(%)
2500 (1)
CW
125 CW
16.0
64.2
Pulse
(100 μsec,
20% Duty Cycle)
125 Peak
18.0
66.8
Gps (2)
(dB)
ηD (2)
(%)
2500
(1)
Typical Wideband Performance: VDD = 50 Vdc, TA = 25°C
NI--360H--2SB
Signal Type
Pout
(W)
(3)
CW
100 CW
12.0
40.0
1300–1900 (4)
CW
125 CW
14.5
45.0
Frequency
(MHz)
200–2500
Gate 2
Load Mismatch/Ruggedness
Frequency
(MHz)
2500
(1)
Signal Type
VSWR
Pin
(W)
Test
Voltage
Pulse
(100 μsec,
20% Duty Cycle)
> 20:1 at
All Phase
Angles
5.0 Peak
(3 dB
Overdrive)
50
1 Drain
Result
No Device
Degradation
1. Measured in 2500 MHz narrowband test circuit.
2. The values shown are the minimum measured performance numbers across the
indicated frequency range.
3. Measured in 200–2500 MHz broadband reference circuit.
4. Measured in 1300–1900 MHz broadband reference circuit.
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Features
•
•
•
•
•
Decade bandwidth performance
Low thermal resistance
Advanced GaN on SiC, offering high power density
Input matched for extended wideband performance
High ruggedness: > 20:1 VSWR
Applications
• Ideal for military end--use applications,
including the following:
– Narrowband and multi--octave
wideband amplifiers
– Radar
– Jammers
– EMC testing
© Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
• Also suitable for commercial applications,
including the following:
– Public mobile radios, including
emergency service radios
– Industrial, scientific and medical
– Wideband laboratory amplifiers
– Wireless cellular infrastructure
MMRF5014H
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
125
Vdc
Gate--Source Voltage
VGS
–8, 0
Vdc
Operating Voltage
VDD
0 to +50
Vdc
IGMAX
18
mA
Storage Temperature Range
Tstg
– 65 to +150
°C
Case Operating Temperature Range
TC
–55 to +150
°C
Operating Junction Temperature Range (1)
TJ
–55 to +225
°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
232
1.16
W
W/°C
Symbol
Value (2)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 82°C, 125 W CW, 50 Vdc, IDQ = 350 mA, 2500 MHz
RθJC
0.86
°C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 58°C, 125 W Peak, 100 μsec Pulse Width,
20% Duty Cycle, 50 Vdc, IDQ = 350 mA, 2500 MHz
ZθJC
0.21
°C/W
Maximum Forward Gate Current @ TC = 25°C
Table 2. Thermal Characteristics
Characteristic
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B, passes 500 V
Machine Model (per EIA/JESD22--A115)
A, passes 100 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IDSS
—
—
5
mAdc
V(BR)DSS
150
—
—
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 25 mAdc)
VGS(th)
–3.8
–2.9
–2.3
Vdc
Gate Quiescent Voltage
(VDS = 50 Vdc, ID = 350 mAdc, Measured in Functional Test)
VGS(Q)
–3.2
–2.7
–2.2
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc)
Crss
—
1.0
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc)
Coss
—
7.7
—
pF
Input Capacitance (3)
(VDS = 50 Vdc, VGS = –4 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
51.0
—
pF
Characteristic
Off Characteristics
Drain Leakage Current
(VGS = –8 Vdc, VDS = 10 Vdc)
Drain--Source Breakdown Voltage
(VGS = –8 Vdc, ID = 25 mAdc)
On Characteristics
Dynamic Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
3. Part internally input matched.
(continued)
MMRF5014H
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 350 mA, Pout = 125 W Peak (25 W Avg.), f = 2500 MHz,
100 μsec Pulse Width, 20% Duty Cycle. [See note on correct biasing sequence.]
Power Gain
Gps
17.0
18.0
20.0
dB
Drain Efficiency
ηD
64.3
66.8
—
%
Input Return Loss
IRL
—
–12
–9
dB
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 350 mA
Frequency
(MHz)
2500
Signal Type
VSWR
Pulse
(100 μsec,
20% Duty Cycle)
> 20:1 at All Phase Angles
Pin
(W)
Test Voltage, VDD
Result
50
No Device Degradation
5.0 Peak
(3 dB Overdrive)
Table 5. Ordering Information
Device
MMRF5014HR5
Tape and Reel Information
R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel
Package
NI--360H--2SB
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set VGS to the pinch--off (VP) voltage, typically –5 V
2. Turn on VDS to nominal supply voltage (50 V)
3. Increase VGS until IDS current is attained
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce VGS down to VP, typically –5 V
3. Reduce VDS down to 0 V (Adequate time must be allowed
for VDS to reduce to 0 V to prevent severe damage to device.)
4. Turn off VGS
MMRF5014H
RF Device Data
Freescale Semiconductor, Inc.
3
200–2500 MHz WIDEBAND REFERENCE CIRCUIT
Section AA
MMRF5014H
Rev. 6
D68303
T2
R1**
C2*
C1**
C17*
C16*
C15*
Q1
C3*
L2
R3 R4
R2**
C6*
C13*
L1
C11
B1
B1
B2
T1
See
Detail BB
T1
C12*
C5
C4
T2
T2
VDD
C7 C8
C9 C10
C14
VGG
**C1, C2, C3, C6, C12, C13, C15, C16, C17, R1, and R2 are mounted vertically.
**Stacked
T2
C17*
C16*
Section AA
B1
B2
C15*
T1
Detail BB 2X
Figure 2. MMRF5014H Wideband Reference Circuit Component Layout — 200–2500 MHz
MMRF5014H
4
RF Device Data
Freescale Semiconductor, Inc.
Table 6. MMRF5014H Wideband Reference Circuit Component Designations and Values — 200–2500 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads
T22-6
Micro Metals
C1
56 pF Chip Capacitor
ATC800B560JT500XT
ATC
C2
75 pF Chip Capacitor
ATC800B750JT500XT
ATC
C3
1.6 pF Chip Capacitor
ATC800B1R6BT500XT
ATC
C4
6.8 μF Chip Capacitor
C4532X7R1H685K
TDK
C5, C8, C9, C11
0.015 μF Chip Capacitors
GRM319R72A153KA01D
Murata
C6, C12
5.6 pF Chip Capacitors
ATC800B5R6BT500XT
ATC
C7, C10
1 μF Chip Capacitors
GRM31CR72A105KAO1L
Murata
C13
1.4 pF Chip Capacitor
ATC800B1R4BT500XT
ATC
C14
220 μF, 100 V Electrolytic Capacitor
EEV-FK2A221M
Panasonic-ECG
C15, C17
0.9 pF Chip Capacitors
ATC800B0R9BT500XT
ATC
C16
47 pF Chip Capacitor
ATC800B470JT500XT
ATC
L1
12.5 nH, 4 Turn Inductor
A04TJLC
Coilcraft
L2
22 nH Inductor
1812SMS-22NJLC
Coilcraft
Q1
RF Power GaN Transistor
MMRF5014HR5
Freescale
R1, R2
10 Ω, 3/4 W Chip Resistors
CRCW201010R0FKEF
Vishay
R3, R4
39 Ω, 1/4 W Chip Resistors
CRCW120639R0FKEA
Vishay
T1
25 Ω Semi Rigid Coax, 0.770″ Shield Length
UT-070-25
Micro--Coax
T2
25 Ω Semi Rigid Coax, 0.850″ Shield Length
UT-070-25
Micro--Coax
PCB
Rogers RO4350B, 0.030″, εr = 3.66
D68303
MTL
Note: Refer to MMRF5014H’s printed circuit boards and schematics to download the 200–2500 MHz heatsink drawing.
MMRF5014H
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 200–2500 MHz
WIDEBAND REFERENCE CIRCUIT
VDD = 50 Vdc, IDQ = 350 mA, CW
Gps, POWER GAIN (dB)
21
20
55
100 W
19
ηD
50
45
18
17
16
15
14
13
12
11
200
70
65
60
40
35
30
Gps
10 W
25
20
100 W
600
1000
1400
1800
2200
ηD, DRAIN EFFICIENCY (%)
23
22
15
10
2600
f, FREQUENCY (MHz)
Figure 3. 200–2500 MHz Wideband Circuit Performance
MMRF5014H
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — OPTIMIZED NARROWBAND PERFORMANCE
Narrowband Performance and Impedance Information (TC = 25°C)
The measured input and output impedances are presented to the input of the device at the package reference plane.
Measurements are performed in Freescale narrowband fixture tuned at 500, 1000, 1500, 2000 and 2500 MHz.
VDD = 50 Vdc, IDQ = 300 mA, CW
30
Gps, POWER GAIN (dB)
28
1000 MHz
500 MHz
80
2500 MHz
500 MHz
26
24
2000 MHz
ηD
1500 MHz
22
20
1500 MHz
18
Gps
20
40
60
80
100
24
16
8
12
0
56
48
32
2000 MHz
14
64
40
1000 MHz
2500 MHz
16
72
ηD, DRAIN EFFICIENCY (%)
32
120
140
160
180
0
200
Pout, OUTPUT POWER (WATTS)
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
f
MHz
Zsource
Ω
Zload
Ω
500
1.3 + j3.9
5.9 + j3.5
1000
1.0 + j0.3
5.5 + j2.9
1500
0.8 – j0.5
3.4 + j2.0
2000
1.2 – j2.0
4.7 + j0.3
2500
2.7 – j3.8
3.7 + j1.4
Zsource = Test circuit impedance as measured
from gate to ground.
Zload
50 Ω
= Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Output
Matching
Network
Device
Under
Test
Zsource
50 Ω
Zload
Figure 5. Narrowband Fixtures: Series Equivalent Source and Load Impedances
MMRF5014H
RF Device Data
Freescale Semiconductor, Inc.
7
1300–1900 MHz WIDEBAND REFERENCE CIRCUIT — 2″ × 3″
VGG
R1
D1
C2
C3 C4
R2
C5 C6
C7
C8
R3
R4 R5
L1
VDD
L2
Q1
C1
C9*
MMRF5014H
Rev. 1
D67114
*C9 is mounted vertically.
Figure 6. MMRF5014H Wideband Reference Circuit Component Layout — 1300–1900 MHz
Table 7. MMRF5014H Wideband Reference Circuit Component Designations and Values — 1300–1900 MHz
Part
Description
Part Number
Manufacturer
C1
18 pF Chip Capacitor
ATC600S180CT250XT
ATC
C2
2.2 μF Tantalum Capacitor
T491A225K016AT
Kemet
C3, C6
1000 pF Chip Capacitors
ATC800B102JT50XT
ATC
C4, C5
33 pF Chip Capacitors
ATC800B330JT500XT
ATC
C7
2.2 μF Chip Capacitor
HMK432B7225KM-T
Taiyo Tuden
C8
47 μF, 100 V Electrolytic Capacitor
476KXM050M
Panasonic-ECG
C9
9.1 pF Chip Capacitor
ATC800B9R1BT500XT
ATC
D1
Green LED
LGN971--KN--1
OSRAM
Q1
RF Power GaN Transistor
MMRF5014HR5
Freescale
R1
75 Ω, 1/4 W Chip Resistor
CRCW120675R0FKEA
Vishay
R2
5 kΩ, 11 Turn Trim Potentiometer
3224W-1-502E
Bourns
R3
5 kΩ, 1/4 W Chip Resistor
CRCW12065K00FKEA
Vishay
R4, R5
39 Ω, 1/4 W Chip Resistors
CRCW120639R0FKEA
Vishay
L1, L2
33 nH Inductors
1812SMS-33NJLC
Coilcraft
PCB
Rogers 3010, 0.025″, εr = 10.2
D67114
MTL
MMRF5014H
8
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1300–1900 MHz
WIDEBAND REFERENCE CIRCUIT
70
VDD = 50 Vdc, IDQ = 200 mA, Pout = 125 W, CW
28
66
Gps, POWER GAIN (dB)
26
62
24
58
ηD
22
54
50
20
18
46
Gps
16
42
14
38
ηD, DRAIN EFFICIENCY (%)
30
34
12
10
1300
1400
1500
1600
1700
1800
30
1900
f, FREQUENCY (MHz)
Figure 7. Power Gain and Drain Efficiency
versus Frequency
75
VDD = 50 Vdc, IDQ = 200 mA, CW
18
Gps, POWER GAIN (dB)
70
1900 MHz
16
14
Gps
1600 MHz
60
1900 MHz
55
1600 MHz
50
1300 MHz
45
1300 MHz
12
10
8
ηD
6
65
40
4
35
2
30
0
0
20
40
60
80
100
120
140
160
ηD, DRAIN EFFICIENCY (%)
20
25
180
Pout, OUTPUT POWER (WATTS)
Figure 8. Power Gain and Drain Efficiency
versus CW Output Power
MMRF5014H
RF Device Data
Freescale Semiconductor, Inc.
9
2500 MHz NARROWBAND PRODUCTION TEST FIXTURE
VGG
VDD
D65152
C8 C12
R2
C14 C7
C10
C2 C3
C4 C5
C13
C9
R1
CUT OUT AREA
C1
C6
C11
MMRF5014H
Rev. 4
Figure 9. MMRF5014H Narrowband Test Circuit Component Layout — 2500 MHz
Table 8. MMRF5014H Narrowband Test Circuit Component Designations and Values — 2500 MHz
Part
Description
Part Number
Manufacturer
C1
3.9 pF Chip Capacitor
ATC600F3R9BT250XT
ATC
C2, C3, C4, C5, C6
12 pF Chip Capacitors
ATC600F120JT250XT
ATC
C7, C14
4.7 μF Chip Capacitors
C4532X7R1H475K200KB
TDK
C8
0.1 μF Chip Capacitor
GRM319R72A104KA01D
Murata
C9
1.0 μF Chip Capacitor
GRM32CR72A105KA35L
Murata
C10
220 μF, 100 V Electrolytic Capacitor
EEV-FK2A221M
Panasonic-ECG
C11
1 pF Chip Capacitor
ATC600F1R0BT250XT
ATC
C12, C13
1000 pF Chip Capacitors
ATC800B102JT50XT
ATC
R1
56 Ω, 1/4 W Chip Resistor
CRCW120656R0FKEA
Vishay
R2
0 Ω, 5 A Chip Resistor
CRCW12100000Z0EA
Vishay
PCB
Rogers RO4350B, 0.030″, εr = 3.66
D65152
MTL
MMRF5014H
10
RF Device Data
Freescale Semiconductor, Inc.
Z9
VBIAS
Z16
Z8
Z17
R2
+
C14
C7
C8
C12
C2
C3
C4
Z7
C13
C9
Z6
Z1
Z2
Z3
Z4
C10
Z15
R1
RF
INPUT
C5
VSUPPLY
Z5
Z10
Z11
Z12
Z13
C1
C11
Z14
RF
OUTPUT
C6
DUT
Figure 10. MMRF5014H Narrowband Test Circuit Schematic — 2500 MHz
Table 9. MMRF5014H Narrowband Test Circuit Microstrips — 2500 MHz
Microstrip
Description
Microstrip
Description
Z1
1.870″ × 0.064″ Microstrip
Z10
Z2, Z3
0.030″ × 0.070″ Microstrip
Z11
0.145″ × 0.515″ Microstrip
0.353″ × 0.515″ Microstrip
Z4
0.105″ × 0.525″ Microstrip
Z12
0.040″ × 0.064″ Microstrip
Z5*
0.240″ × 0.525″ Microstrip
Z13
0.687″ × 0.064″ Microstrip
Z6
0.037″ × 0.050″ Microstrip
Z14
1.020″ × 0.064″ Microstrip
Z7
0.465″ × 0.050″ Microstrip
Z15
0.468″ × 0.050″ Microstrip
Z8
0.090″ × 0.050″ Microstrip
Z16
0.158″ × 0.050″ Microstrip
Z9
0.190″ × 0.050″ Microstrip
Z17
0.078″ × 0.050″ Microstrip
* Line length include microstrip bends
MMRF5014H
RF Device Data
Freescale Semiconductor, Inc.
11
22
21
20
19
18
17
16
15
14
13
12
11
10
9
70
IDQ = 350 mA, f = 2500 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
40 V
35 V
60
ηD, DRAIN EFFICIENCY (%)
50 V
45 V
30 V
VDD = 25 V
10
30
50
50
30 V
35 V
40
30
IDQ = 350 mA, f = 2500 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
20
10
70
90
110
130
150
170
190
20
0
40
60
80
100
120
140
160
180
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain versus Output Power (1)
Figure 12. Drain Efficiency versus Output Power (1)
180
22
160
140
–55°C
85°C
120
100
80
60
40
VDD = 50 Vdc, IDQ = 350 mA, f = 2500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
20
1
2
3
4
5
6
85_C
20
40
85_C
18
30
Gps
17
15
70
50
25_C
25_C
19
ηD
60
–55_C
IDQ = 350 mA, f = 2500 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
16
0
0
TC = –55_C
21
TC = 25°C
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) PEAK
VDD = 25 V
50 V
45 V
40 V
0
20
40
60
80
100
20
10
120
140
160
180
Pin, INPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 13. Output Power versus Input Power (1)
Figure 14. Power Gain and Drain Efficiency
versus Output Power (1)
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS — 2500 MHz
0
200
1. Circuit tuned for maximum power.
MMRF5014H
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
Pin 1.
Drain
2.
Gate
3.
Source
MMRF5014H
RF Device Data
Freescale Semiconductor, Inc.
13
MMRF5014H
14
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Development Tools
• Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1.
2.
3.
4.
Go to http://www.freescale.com/rf
Search by part number
Click part number link
Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2015
• Initial Release of Data Sheet
1
Sept. 2015
• Table 1, Maximum Ratings: added Maximum Forward Gate Current, p. 2
• Table 4, Electrical Characteristics: changed Load Mismatch/Ruggedness signal type to pulse to reflect
correct modulation signal, p. 3
MMRF5014H
RF Device Data
Freescale Semiconductor, Inc.
15
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E 2015 Freescale Semiconductor, Inc.
MMRF5014H
Document Number: MMRF5014H
Rev. 1, 9/2015
16
RF Device Data
Freescale Semiconductor, Inc.
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