IPW60R070P6 Data Sheet (1.9 MB, EN)

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor
IPW60R070P6
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
600VCoolMOS™P6PowerTransistor
IPW60R070P6
1Description
TO-247
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
Features
•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
70
mΩ
Qg.typ
100
nC
ID,pulse
156
A
Eoss@400V
12.3
µJ
Body diode di/dt
300
A/µs
Type/OrderingCode
Package
Marking
IPW60R070P6
PG-TO 247
6R070P6
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current 1)
Values
Unit
Note/TestCondition
53.5
33.8
A
TC=25°C
TC=100°C
-
156
A
TC=25°C
-
-
1136
mJ
ID=9.3A; VDD=50V; see table 10
EAR
-
-
1.72
mJ
ID=9.3A; VDD=50V; see table 10
Avalanche current, repetitive
IAR
-
-
9.3
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
100
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-247
Ptot
-
-
391
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque (Non FullPAK)
TO-247
-
-
-
60
Ncm M3 and M3.5 screws
Continuous diode forward current
IS
-
-
46.3
A
TC=25°C
Diode pulse current
IS,pulse
-
-
156
A
TC=25°C
Reverse diode dv/dt 3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Maximum diode commutation speed
dif/dt
-
-
300
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Min.
Typ.
Max.
ID
-
-
Pulsed drain current 2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
1)
Limited by Tj max. Maximum duty cycle D=0.75
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
4
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
3Thermalcharacteristics
Table3Thermalcharacteristics(NonFullPAK)TO-247
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
0.32
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Final Data Sheet
Tsold
5
1.6mm (0.063 in.) from case for 10s
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
4.0
4.5
V
VDS=VGS,ID=1.72mA
-
10
5
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.063
0.164
0.070
-
Ω
VGS=10V,ID=20.6A,Tj=25°C
VGS=10V,ID=20.6A,Tj=150°C
Gate resistance
RG
-
1
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
3.5
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
4750
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
190
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related 1)
Co(er)
-
150
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance,
time related 2)
Co(tr)
-
703
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
23
-
ns
VDD=400V,VGS=13V,ID=25.8A,
RG=1.7Ω;seetable9
Rise time
tr
-
15
-
ns
VDD=400V,VGS=13V,ID=25.8A,
RG=1.7Ω;seetable9
Turn-off delay time
td(off)
-
64
-
ns
VDD=400V,VGS=13V,ID=25.8A,
RG=1.7Ω;seetable9
Fall time
tf
-
4
-
ns
VDD=400V,VGS=13V,ID=25.8A,
RG=1.7Ω;seetable9
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
30
-
nC
VDD=400V,ID=25.8A,VGS=0to10V
Gate to drain charge
Qgd
-
35
-
nC
VDD=400V,ID=25.8A,VGS=0to10V
Gate charge total
Qg
-
100
-
nC
VDD=400V,ID=25.8A,VGS=0to10V
Gate plateau voltage
Vplateau
-
6.1
-
V
VDD=400V,ID=25.8A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
6
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=25.8A,Tj=25°C
520
-
ns
VR=400V,IF=25.8A,diF/dt=100A/µs;
see table 8
-
12
-
µC
VR=400V,IF=25.8A,diF/dt=100A/µs;
see table 8
-
44
-
A
VR=400V,IF=25.8A,diF/dt=100A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
7
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
103
400
1 µs
350
102
10 µs
100 µs
300
101
1 ms
10 ms
ID[A]
Ptot[W]
250
200
150
100
DC
10-1
100
10-2
50
0
0
25
50
75
100
125
10-3
150
100
101
102
TC[°C]
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
100
10
1 µs
102
10 µs
0.5
100 µs
101
10-1
ID[A]
10 ms
0
10
DC
10-1
0.2
0.1
ZthJC[K/W]
1 ms
0.05
0.02
10-2
0.01
single pulse
10-2
10-3
100
101
102
103
10-3
10-5
10-4
10-3
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-2
10-1
100
tp[s]
ZthJC=f(tP);parameter:D=tp/T
8
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
160
20 V
150
10 V
140
130
120
8V
110
90
80
ID[A]
ID[A]
100
7V
70
60
50
40
30
6V
20
5.5 V
10
0
4.5 V
0
5
5V
10
15
20
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
20 V
10 V
8V
7V
6V
5.5 V
5V
4.5 V
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
0.50
0.20
0.45
0.40
0.15
0.30
5.5 V
6V
RDS(on)[Ω]
RDS(on)[Ω]
0.35
7V
6.5 V
0.25
10 V
0.20
typ
98%
0.05
20 V
0.15
0.10
0.10
0
10
20
30
40
50
60
70
80
0.00
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=20.6A;VGS=10V
9
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
160
10
25 °C
9
140
8
120 V
120
480 V
7
6
80
VGS[V]
ID[A]
100
150 °C
5
4
60
3
40
2
20
0
1
0
2
4
6
8
10
12
0
14
0
10
20
30
40
VGS[V]
50
60
70
80
90
100 110
125
150
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=25.8Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
1200
1100
1000
900
101
IF[A]
125 °C
EAS[mJ]
800
25 °C
100
700
600
500
400
300
200
100
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=9.3A;VDD=50V
10
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
700
Ciss
680
660
103
620
C[pF]
VBR(DSS)[V]
640
600
Coss
102
580
101
560
Crss
540
520
-75
-50
-25
0
25
50
75
100
125
150
175
100
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
17
16
15
14
13
12
Eoss[µJ]
11
10
9
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
td(off)
tr
ton
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
Final Data Sheet
12
ID
VDS
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
7PackageOutlines
Figure1OutlinePG-TO247,dimensionsinmm/inches
Final Data Sheet
13
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
8AppendixA
Table11RelatedLinks
• IFXCoolMOSTMP6Webpage:www.infineon.com
• IFXCoolMOSTMP6applicationnote:www.infineon.com
• IFXCoolMOSTMP6simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
14
Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R070P6
RevisionHistory
IPW60R070P6
Revision:2014-03-07,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-03-07
Release of final version
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InfineonTechnologiesAG
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©2014InfineonTechnologiesAG
AllRightsReserved.
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
15
Rev.2.0,2014-03-07