SPB02N60S5 Data Sheet (344 KB, EN)

SPB02N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS
600
V
RDS(on)
3
Ω
ID
1.8
A
PG-TO263
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPB02N60S5
Package
PG-TO263
Ordering Code
Q67040-S4212
Marking
02N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC = 25 °C
1.8
TC = 100 °C
1.1
Pulsed drain current, tp limited by Tjmax
I D puls
3.2
Avalanche energy, single pulse
EAS
50
mJ
I D = 1.35 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
0.07
I D = 1.8 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR
Gate source voltage
VGS
1.8
A
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, T C = 25°C
Ptot
25
W
Operating and storage temperature
T j , T stg
-55... +150
°C
Rev. 2.4
Page 1
2007-02-14
SPB02N60S5
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
20
V/ns
Values
Unit
V DS = 480 V, ID = 1.8 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
5
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm2 cooling area 2)
-
35
-
-
-
260
Soldering temperature, reflow soldering, MSL1
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=1.8A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
3.5
4.5
5.5
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=80µΑ, VGS=VDS
Zero gate voltage drain current
IDSS
VDS=600V, VGS=0V,
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Rev. 2.4
µA
Tj=25°C,
-
0.5
1
Tj=150°C
-
-
50
VGS=20V, VDS=0V
-
-
100
Ω
VGS=10V, ID=1.1A,
Tj=25°C
-
2.7
3
Tj=150°C
-
7.3
-
Page 2
nA
2007-02-14
SPB02N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
1.4
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=1.1A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
240
-
Output capacitance
Coss
f=1MHz
-
77
-
Reverse transfer capacitance
Crss
-
4.4
-
Turn-on delay time
t d(on)
V DD=350V, V GS=0/10V,
-
35
-
Rise time
tr
ID=1.8A, RG=50Ω
-
35
-
Turn-off delay time
t d(off)
-
35
42
Fall time
tf
-
20
30
-
2.3
-
-
4.5
-
-
7.3
9.5
-
8
-
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=350V, ID=1.8A
VDD=350V, ID=1.8A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=1.8A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.4
Page 3
2007-02-14
SPB02N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Inverse diode continuous
IS
Conditions
TC=25°C
Values
Unit
min.
typ.
max.
-
-
1.8
-
-
3.2
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=350V, IF =IS ,
-
860
1460
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
1.6
-
µC
Typical Transient Thermal Characteristics
Value
Symbol
Unit
Symbol
Value
typ.
Unit
typ.
Thermal resistance
Thermal capacitance
R th1
0.1
R th2
K/W
Cth1
0.00002806
0.184
Cth2
0.0001113
R th3
0.306
Cth3
0.0001679
R th4
1.207
Cth4
0.000547
R th5
0.974
Cth5
0.001388
R th6
0.251
Cth6
0.019
Tj
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.4
Page 4
2007-02-14
SPB02N60S5
1 Power dissipation
2 Safe operating area
Ptot = f (TC)
ID = f ( V DS )
parameter : D = 0 , T C=25°C
28
10 1
SPP02N60S5
W
A
24
22
10 0
18
ID
Ptot
20
16
14
12
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 -1
8
6
4
2
0
0
20
40
60
80
100
°C
120
10 -2 0
10
160
10
1
2
10
10
V
VDS
TC
3 Typ. output characteristic
4 Drain-source on-state resistance
ID = f (VDS); Tj=25°C
RDS(on) = f (Tj)
parameter: tp = 10 µs, VGS
parameter : ID = 1.1 A, VGS = 10 V
6
17
SPP02N60S5
Ω
20V
A
14
4
RDS(on)
ID
12V
10V
3
2
8
8.5V
6
5
10
15
V
typ
2
25
VDS
Rev. 2.4
98%
4
7.5V
7V
6V
0
0
10
9V
8V
1
12
0
-60
-20
20
60
100
°C
180
Tj
Page 5
2007-02-14
3
SPB02N60S5
5 Typ. transfer characteristics
6 Typ. gate charge
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
VGS = f (Q Gate)
parameter: ID = 1.8 A pulsed
parameter: tp = 10 µs
6
16
SPP02N60S5
V
A
0.2 VDS max
12 0.8 VDS max
VGS
ID
4
10
3
8
6
2
4
1
2
0
0
4
8
12
VGS
0
0
20
1
2
3
4
6
7
8
nC
10
Q Gate
V
7 Forward characteristics of body diode
8 Avalanche SOA
IF = f (VSD)
IAR = f (tAR)
parameter: Tj , tp = 10 µs
par.: Tj ≤ 150 °C
10
5
1 SPP02N60S5
2
A
A
1.6
T j(START)=25°C
1.4
IF
IAR
10 0
1.2
1
0.8
10 -1
0.6
Tj = 25 °C typ
Tj = 150 °C typ
0.4
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
0
0.4
0.8
1.2
1.6
2
0.2
2.4 V
0 -3
10
3
VSD
Rev. 2.4
Tj(START)=125°C
Page 6
10
-2
10
-1
10
0
10
1
10
2
µs 10
t AR
4
2007-02-14
SPB02N60S5
9 Avalanche energy
10 Drain-source breakdown voltage
EAS = f (Tj)
V(BR)DSS = f (Tj)
par.: ID = 1.35 A, VDD = 50 V
50
720
SPP02N60S5
V
V(BR)DSS
EAS
mJ
30
680
660
640
620
20
600
580
10
560
0
20
40
60
80
100
120
°C
160
Tj
540
-60
-20
20
60
100
°C
180
Tj
11 Typ. capacitances
C = f (VDS)
parameter: V GS=0V, f=1 MHz
10 4
pF
10 3
C
Ciss
10 2
Coss
10 1
Crss
10 0
0
Rev. 2.4
10
20
30
40
50
60
70
80
V 100
VDS
Page 7
2007-02-14
SPB02N60S5
Definition of diodes switching characteristics
Rev. 2.4
Page 8
2007-02-14
SPB02N60S5
PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22
Rev. 2.4
Page 9
2007-02-14
SPB02N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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Rev. 2.4
Page 10
2007-02-14