SPP02N60S5 SPB02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS(on) 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances 1 • Improved transconductance 23 P-TO220-3-1 Type Package Ordering Code SPP02N60S5 P-TO220-3-1 Q67040-S4181 Marking 02N60S5 SPB02N60S5 P-TO263-3-2 Q67040-S4212 02N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 1.8 TC = 100 °C 1.1 Pulsed drain current, tp limited by Tjmax I D puls 3.2 Avalanche energy, single pulse EAS 50 mJ I D = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.07 I D = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 1.8 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 25 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.1 Page 1 2004-03-30 SPP02N60S5 SPB02N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 1.8 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - - - 260 Soldering temperature, Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=1.8A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=80µΑ, VGS=VDS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Rev. 2.1 µA Tj=25°C, - 0.5 1 Tj=150°C - - 50 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=1.1A, Tj=25°C - 2.7 3 Tj=150°C - 7.3 - Page 2 nA 2004-03-30 SPP02N60S5 SPB02N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 1.4 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=1.1A Input capacitance Ciss V GS=0V, V DS=25V, - 240 - Output capacitance Coss f=1MHz - 77 - Reverse transfer capacitance Crss - 4.4 - Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 35 - Rise time tr ID=1.8A, RG=50Ω - 35 - Turn-off delay time t d(off) - 35 42 Fall time tf - 20 30 - 2.3 - - 4.5 - - 7.3 9.5 - 8 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=350V, ID=1.8A VDD=350V, ID=1.8A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=1.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow Rev. 2.1 Page 3 2004-03-30 SPP02N60S5 SPB02N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 1.8 - - 3.2 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF =IS , - 860 1460 ns Reverse recovery charge Qrr diF/dt=100A/µs - 1.6 - µC Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.1 R th2 K/W Cth1 0.00002806 0.184 Cth2 0.0001113 R th3 0.306 Cth3 0.0001679 R th4 1.207 Cth4 0.000547 R th5 0.974 Cth5 0.001388 R th6 0.251 Cth6 0.019 Tj R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.1 Page 4 2004-03-30 SPP02N60S5 SPB02N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 28 10 1 SPP02N60S5 W A 24 22 10 0 18 ID Ptot 20 16 14 12 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 8 6 4 2 0 0 20 40 60 80 100 °C 120 10 -2 0 10 160 10 1 2 10 10 V VDS TC 3 Typ. output characteristic 4 Drain-source on-state resistance ID = f (VDS); Tj=25°C RDS(on) = f (Tj) parameter: tp = 10 µs, VGS parameter : ID = 1.1 A, VGS = 10 V 6 17 SPP02N60S5 Ω 20V A 14 4 RDS(on) ID 12V 10V 3 2 8 8.5V 6 5 10 15 V typ 2 25 VDS Rev. 2.1 98% 4 7.5V 7V 6V 0 0 10 9V 8V 1 12 0 -60 -20 20 60 100 °C 180 Tj Page 5 2004-03-30 3 SPP02N60S5 SPB02N60S5 5 Typ. transfer characteristics 6 Typ. gate charge ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 1.8 A pulsed parameter: tp = 10 µs 6 16 SPP02N60S5 V A 0.2 VDS max 12 0.8 VDS max VGS ID 4 10 3 8 6 2 4 1 2 0 0 4 8 12 VGS 0 0 20 1 2 3 4 6 7 8 nC 10 Q Gate V 7 Forward characteristics of body diode 8 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C 10 5 1 SPP02N60S5 2 A A 1.6 T j(START)=25°C 1.4 IF IAR 10 0 1.2 1 0.8 10 -1 0.6 Tj = 25 °C typ Tj = 150 °C typ 0.4 Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 0.4 0.8 1.2 1.6 2 0.2 2.4 V 0 -3 10 3 VSD Rev. 2.1 Tj(START)=125°C Page 6 10 -2 10 -1 10 0 10 1 10 2 µs 10 t AR 4 2004-03-30 SPP02N60S5 SPB02N60S5 9 Avalanche energy 10 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: ID = 1.35 A, VDD = 50 V 50 720 SPP02N60S5 V V(BR)DSS EAS mJ 30 680 660 640 620 20 600 580 10 560 0 20 40 60 80 100 120 °C 160 Tj 540 -60 -20 20 60 100 °C 180 Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 pF 10 3 C Ciss 10 2 Coss 10 1 Crss 10 0 0 Rev. 2.1 10 20 30 40 50 60 70 80 V 100 VDS Page 7 2004-03-30 SPP02N60S5 SPB02N60S5 Definition of diodes switching characteristics Rev. 2.1 Page 8 2004-03-30 SPP02N60S5 SPB02N60S5 P-TO-220-3-1 B 4.44 0.05 9.98 ±0.48 2.8 ±0.2 1.27±0.13 13.5 ±0.5 C A 5.23 ±0.9 15.38 ±0.6 10 ±0.4 3.7 ±0.2 0.5 ±0.1 3x 0.75 ±0.1 2.51±0.2 1.17 ±0.22 2x 2.54 0.25 M A B C All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-2 (D 2-PAK) Rev. 2.1 Page 9 2004-03-30 SPP02N60S5 SPB02N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 10 2004-03-30