SPB07N60S5 Data Sheet (647 KB, EN)

SPB07N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
VDS
600
V
RDS(on)
0.6
Ω
ID
7.3
A
PG-TO263
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
Package
Ordering Code
Marking
SPB07N60S5
PG-TO263
Q67040-S4185
07N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC = 25 °C
7.3
TC = 100 °C
4.6
Pulsed drain current, tp limited by Tjmax
I D puls
14.6
Avalanche energy, single pulse
EAS
230
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
0.5
mJ
I D = - A, V DD = 50 V
I D = 7.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR
Gate source voltage
VGS
7.3
A
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, T C = 25°C
Ptot
83
W
Operating and storage temperature
T j , T stg
-55... +150
°C
Rev. 2.3
Page 1
2005-07-21
SPB07N60S5
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
20
V/ns
Values
Unit
V DS = 480 V, ID = 7.3 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1.5
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm2 cooling area 2)
-
35
-
-
-
260
Soldering temperature, reflow soldering, MSL1
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS V GS=0V, ID=7.3A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
3.5
4.5
5.5
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=350µΑ, VGS=V DS
Zero gate voltage drain current
I DSS
V DS=600V, VGS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 2.3
RG
µA
Tj=25°C,
-
0.5
1
Tj=150°C
-
-
100
V GS=20V, VDS=0V
-
-
100
Ω
V GS=10V, ID=4.6A,
Tj=25°C
-
0.54
0.6
Tj=150°C
-
1.46
-
f=1MHz, open Drain
-
19
-
Page 2
nA
2005-07-21
SPB07N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
4
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=4.6A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
970
-
Output capacitance
Coss
f=1MHz
-
370
-
Reverse transfer capacitance
Crss
-
10
-
-
30
-
-
55
-
Effective output capacitance,3) Co(er)
energy related
V GS=0V,
V DS=0V to 480V
Effective output capacitance,4) Co(tr)
time related
Turn-on delay time
t d(on)
V DD=350V, V GS=0/10V,
-
120
-
Rise time
tr
ID=7.3A, RG=12Ω
-
40
-
Turn-off delay time
t d(off)
-
170
255
Fall time
tf
-
20
30
-
7.5
-
-
16.5
-
-
27
35
-
8
-
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
pF
VDD=350V, ID=7.3A
VDD=350V, ID=7.3A,
ns
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=7.3A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3C
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V
o(er)
DSS.
4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.3
Page 3
2005-07-21
SPB07N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Inverse diode continuous
IS
Conditions
TC=25°C
Values
Unit
min.
typ.
max.
-
-
7.3
-
-
14.6
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=350V, IF =IS ,
-
750
1275
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
4.9
-
µC
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
typ.
Unit
typ.
Thermal resistance
Thermal capacitance
R th1
0.024
R th2
Cth1
0.00012
0.046
Cth2
0.0004578
R th3
0.085
Cth3
0.000645
R th4
0.308
Cth4
0.001867
R th5
0.317
Cth5
0.004795
R th6
0.112
Cth6
0.045
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.3
Page 4
2005-07-21
SPB07N60S5
1 Power dissipation
2 Safe operating area
Ptot = f (TC)
ID = f ( V DS )
parameter : D = 0 , T C=25°C
100
10 2
SPP07N60S5
W
A
80
10 1
ID
Ptot
70
60
10 0
50
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
40
30
10 -1
20
10
0
0
20
40
60
80
100
°C
120
10 -2 0
10
160
10
1
10
2
10
V
VDS
TC
3 Typ. output characteristic
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
parameter: tp = 10 µs, VGS
25
12
20V
20V
12V
10V
A
A
9V
15
ID
ID
12V
10V
8.5V
8
8V
6
9V
10
7.5V
4
7V
8V
5
6.5V
2
6V
7V
0
0
5
10
15
V
25
VDS
Rev. 2.3
0
0
5
10
15
V
25
VDS
Page 5
2005-07-21
3
SPB07N60S5
5 Typ. drain-source on resistance
6 Drain-source on-state resistance
RDS(on)=f(ID)
RDS(on) = f (Tj)
parameter: Tj=150°C, VGS
parameter : ID = 4.6 A, VGS = 10 V
3
3.4
SPP07N60S5
Ω
2.8
RDS(on)
RDS(on)
mΩ
2
2
1.6
20V
12V
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
1.5
1
0
2.4
2
4
6
8
A
10
1.2
98%
0.8
typ
0.4
0
-60
14
-20
20
60
°C
100
ID
180
Tj
7 Typ. transfer characteristics
8 Typ. gate charge
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
VGS = f (Q Gate)
parameter: ID = 7.3 A pulsed
parameter: tp = 10 µs
24
16
SPP07N60S5
A
20
0.2 VDS max
18
12 0.8 VDS max
16
14
VGS
ID
V
25 °C
150 °C
12
10
8
10
6
8
6
4
4
2
2
0
0
4
8
12
V
20
4
8
12
16
20
24
28
32 nC 38
Q Gate
VGS
Rev. 2.3
0
0
Page 6
2005-07-21
SPB07N60S5
9 Forward characteristics of body diode
10 Avalanche SOA
IF = f (VSD)
IAR = f (tAR)
parameter: Tj , tp = 10 µs
par.: Tj ≤ 150 °C
2 SPP07N60S5
10
8
A
A
6
IAR
IF
10
1
5
T j(START) =25°C
4
3
10 0
T j(START) =125°C
Tj = 25 °C typ
2
Tj = 150 °C typ
Tj = 25 °C (98%)
1
Tj = 150 °C (98%)
10 -1
0
0.4
0.8
1.2
1.6
2
2.4 V
0 -3
10
3
10
-2
10
-1
10
0
10
1
10
2
4
µs 10
tAR
VSD
11 Avalanche energy
12 Drain-source breakdown voltage
EAS = f (Tj)
V(BR)DSS = f (Tj)
par.: ID = - A, VDD = 50 V
260
720
mJ
SPP07N60S5
V
220
V(BR)DSS
EAS
200
180
160
680
660
640
140
120
620
100
600
80
60
580
40
560
20
0
20
40
60
80
100
120
°C
160
Tj
Rev. 2.3
540
-60
-20
20
60
100
°C
180
Tj
Page 7
2005-07-21
SPB07N60S5
13 Avalanche power losses
14 Typ. capacitances
PAR = f (f )
C = f (VDS)
parameter: E AR=0.5mJ
parameter: V GS=0V, f=1 MHz
10 4
300
pF
W
Ciss
200
C
PAR
10 3
10 2
150
Coss
100
10 1
Crss
50
0 4
10
10
5
MHz
10
10 0
0
6
100
200
300
400
V
600
VDS
f
15 Typ. Coss stored energy
16 Typ. gate threshold voltage
Eoss=f(VDS)
VGS(th) = f (Tj)
parameter: V GS = VDS
5.5
µJ
4.5
Eoss
4
3.5
3
2.5
2
1.5
1
0.5
0
0
100
200
300
400
V
600
VDS
Rev. 2.3
Page 8
2005-07-21
SPB07N60S5
Definition of diodes switching characteristics
Rev. 2.3
Page 9
2005-07-21
SPB07N60S5
PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22
Rev. 2.3
Page 10
2005-07-21
SPB07N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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For information on the types in question please contact your nearest Infineon Technologies Office.
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Rev. 2.3
Page 11
2005-07-21