SPP15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge 650 V R DS(on),max 0.330 " ID 13.4 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability • Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: • Softswitching PWM Stages • LCD & CRT TV Type Package Marking SPP15N60CFD PG-TO220 15N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 13.4 T C=100 °C 8.4 Pulsed drain current2) I D,pulse T C=25 °C 33 Avalanche energy, single pulse E AS I D=6.7 A, V DD=50 V 460 Avalanche energy, repetitive2),3) E AR I D=13.4 A, V DD=50 V 0.8 Avalanche current, repetitive2),3) I AR Drain source voltage slope dv /dt Reverse diode dv /dt dv /dt Maximum diode commutation speed Gate source voltage mJ A 80 V/ns 40 V/ns di /dt 600 A/µs V GS static ±20 V AC (f >1 Hz) ±30 T C=25 °C 156 W -55 ... 150 °C P tot Operating and storage temperature T j, T stg Rev. 1.3 I D=13.4 A, V DS=480 V, T j=125 °C A I S=13.4 A, V DS=480 V, T j=125 °C Power dissipation Mounting torque 13.4 Unit M3 & 3.5 screws page 1 60 Ncm 2009-11-30 SPP15N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 0.8 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wave soldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=13.4 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=750 µA 3 4 5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 1.4 - V DS=600 V, V GS=0 V, T j=150 °C - 1200 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.4 A, T j=25 °C - 0.28 0.33 " V GS=10 V, I D=9.4 A, T j=150 °C - 0.78 - Gate resistance RG f =1 MHz, open drain - 1.3 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=9.4 A - 8 - Rev. 1.3 page 2 S 2009-11-30 SPP15N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - 1820 - - 520 - - 21 - - 61 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy related4) C o(er) Effective output capacitance, time related5) C o(tr) - 110 - Turn-on delay time t d(on) - 43 - Rise time tr - 24 - Turn-off delay time t d(off) - 47 - Fall time tf - 5 - Gate to source charge Q gs - 11 - Gate to drain charge Q gd - 38 - Gate charge total Qg - 63 84 Gate plateau voltage V plateau - 7.3 - V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=13.4 A, R G=3.6 " ns Gate Charge Characteristics V DD=480 V, I D=13.4 A, V GS=0 to 10 V 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 1.3 page 3 nC V 2009-11-30 SPP15N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 13.4 - - 33 - 1.0 1.2 V - 147 - ns - 1 - µC - 12 - A - 1200 - A/µs Reverse Diode Diode continuous forward current IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm Peak rate of fall of reverse recovery current di rr / dt Rev. 1.3 A T C=25 °C V GS=0 V, I F=I S, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs T j=25 °C page 4 2009-11-30 SPP15N60CFD 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 160 limited by on-state resistance 140 1 µs 120 10 µs 101 100 µs I D [A] P tot [W] 100 80 1 ms DC 10 ms 60 100 40 20 10-1 0 0 40 80 120 100 160 101 102 103 V DS [V] T C [°C] 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 100 35 20 V 10 V 30 0.5 25 8V 20 10 I D [A] Z thJC [K/W] 0.2 0.1 -1 0.05 15 0.02 7V 0.01 10 6.5 V single pulse 5 6V 5.5 V 10 -2 10-5 0 10-4 10-3 10-2 10-1 t p [s] Rev. 1.3 5V 0 5 10 15 20 V DS [V] page 5 2009-11-30 SPP15N60CFD 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 20 2 20 V 8V 1.8 10 V 1.6 15 1.4 R DS(on) [ ] I D [A] 7V 10 6.5 V 1.2 1 5V 6V 5.5 V 6.5 V 7V 10 V 0.8 20 V 6V 0.6 5.5 V 0.4 5V 0.2 5 0 0 0 5 10 15 20 0 2 4 V DS [V] 6 8 10 12 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=9.4 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max 1 50 0.8 40 0.6 30 25 °C I D [A] R DS(on) [ ] parameter: T j 98 % 0.4 150 °C 20 typ 0.2 10 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.3 0 2 4 6 8 10 12 V GS [V] page 6 2009-11-30 SPP15N60CFD 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=13.4 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 120 V 480 V 8 10 150 °C, 98% 25 °C 1 6 I F [A] V GS [V] 150 °C 25 °C, 98% 4 100 2 10 0 0 20 40 60 -1 0 80 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=6.7 A; V DD=50 V parameter: T j(start) 14 480 420 12 360 10 6 125 °C E AS [mJ] I AV [A] 300 8 25 °C 240 180 4 120 2 60 0 10-3 0 10-2 10-1 100 101 102 103 104 t AR [µs] Rev. 1.3 25 75 125 175 T j [°C] page 7 2009-11-30 SPP15N60CFD 13 Drain-source breakdown voltage 14 Typ. capacitances V BR(DSS)=f(T j) C =f(V DS); V GS=0 V; f =1 MHz 104 700 Ciss 103 C [pF] V BR(DSS) [V] 660 620 102 Coss Crss 580 540 -60 -20 20 60 100 140 10 1 10 0 0 180 100 T j [°C] 200 300 400 500 V DS [V] 15 Typ. C oss stored energy 16 Typ. reverse recovery charge E oss= f(V DS) Q rr=f(T j);parameter: I D =13.4 A 12 2 10 1.8 8 Q rr [µC] E oss [µJ] 1.6 6 1.4 4 1.2 2 0 1 0 100 200 300 400 500 600 Rev. 1.3 25 50 75 100 125 T j [°C] V DS [V] page 8 2009-11-30 SPP15N60CFD 17 Typ. reverse recovery charge 18 Typ. reverse recovery charge Q rr=f(I S); parameter: di/ dt =100 A/µs Q rr=f(di /dt ); parameter: I D=13.4 A 2 3 1.8 125 °C 2.5 1.6 125 °C 1.4 2 Q rr [µC] Q rr [µC] 1.2 1 25 °C 1.5 25 °C 0.8 1 0.6 0.4 0.5 0.2 0 0 3 5 7 9 11 13 Rev. 1.3 100 200 300 400 500 d i/d t [A/µs] I S [A] page 9 2009-11-30 SPP15N60CFD Definition of diode switching characteristics Rev. 1.3 page 10 2009-11-30 SPP15N60CFD PG-TO-220-3--1; -3-21 Dimensions in mm/ inches Rev. 1.3 page 11 2009-11-30 SPP15N60CFD Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 12 2009-11-30