INFINEON SPP15N60CFD

SPP15N60CFD
CoolMOSTM Power Transistor
Product Summary
Features
V DS @ Tjmax
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
650
V
R DS(on),max
0.330 Ω
ID
13.4
• Extreme dv /dt rated
A
PG-TO220
• High peak current capability
• Qualified according to JEDEC1) for target applications
CoolMOS CFD designed for:
• Softswitching PWM Stages
• LCD & CRT TV
Type
Package
Marking
SPP15N60CFD
PG-TO220
15N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
13.4
T C=100 °C
8.4
Pulsed drain current2)
I D,pulse
T C=25 °C
33
Avalanche energy, single pulse
E AS
I D=6.7 A, V DD=50 V
460
Avalanche energy, repetitive2),3)
E AR
I D=13.4 A, V DD=50 V
0.8
Avalanche current, repetitive2),3)
I AR
Drain source voltage slope
dv /dt
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed
Gate source voltage
mJ
A
80
V/ns
40
V/ns
di /dt
600
A/µs
V GS
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
156
W
-55 ... 150
°C
P tot
Operating and storage temperature
T j, T stg
Rev. 1.2
I D=13.4 A,
V DS=480 V, T j=125 °C
A
I S=13.4 A, V DS=480 V,
T j=125 °C
Power dissipation
Mounting torque
13.4
Unit
M3 & 3.5 screws
page 1
60
Ncm
2007-08-28
SPP15N60CFD
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.8
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
62
Soldering temperature, wave
soldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
600
-
-
V
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Avalanche breakdown voltage
V (BR)DS
V GS=0 V, I D=13.4 A
-
700
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=750 µA
3
4
5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
1.4
-
V DS=600 V, V GS=0 V,
T j=150 °C
-
1200
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=9.4 A,
T j=25 °C
-
0.28
0.33
Ω
V GS=10 V, I D=9.4 A,
T j=150 °C
-
0.78
-
Gate resistance
RG
f =1 MHz, open drain
-
1.3
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=9.4 A
-
8
-
Rev. 1.2
page 2
S
2007-08-28
SPP15N60CFD
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1820
-
-
520
-
-
21
-
-
61
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
Effective output capacitance, energy
related4)
C o(er)
Effective output capacitance, time
related5)
C o(tr)
-
110
-
Turn-on delay time
t d(on)
-
43
-
Rise time
tr
-
24
-
Turn-off delay time
t d(off)
-
47
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
11
-
Gate to drain charge
Q gd
-
38
-
Gate charge total
Qg
-
63
84
Gate plateau voltage
V plateau
-
7.3
-
V GS=0 V, V DS=25 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=13.4 A,
R G=3.6 Ω
ns
Gate Charge Characteristics
V DD=480 V,
I D=13.4 A,
V GS=0 to 10 V
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
5)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 1.2
page 3
nC
V
2007-08-28
SPP15N60CFD
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
13.4
-
-
33
-
1.0
1.2
V
-
147
-
ns
-
1
-
µC
-
12
-
A
-
1200
-
A/µs
Reverse Diode
Diode continuous forward current
IS
Diode pulse current 2)
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
Peak rate of fall of reverse recovery
current
di rr / dt
Rev. 1.2
T C=25 °C
V GS=0 V, I F=I S,
T j=25 °C
V R=480 V, I F=I S,
di F/dt =100 A/µs
T j=25 °C
page 4
A
2007-08-28
SPP15N60CFD
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
160
102
limited by on-state
resistance
140
1 µs
120
10 µs
10
100 µs
I D [A]
P tot [W]
100
1
80
1 ms
DC
10 ms
60
100
40
20
10-1
0
0
40
80
120
100
160
101
102
103
V DS [V]
T C [°C]
3 Max. transient thermal impedance
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
35
100
20 V
10 V
30
0.5
25
8V
20
10
I D [A]
Z thJC [K/W]
0.2
0.1
-1
0.05
15
0.02
7V
0.01
10
6.5 V
single pulse
5
6V
5.5 V
10
-2
10-5
0
10-4
10-3
10-2
10-1
t p [s]
Rev. 1.2
5V
0
5
10
15
20
V DS [V]
page 5
2007-08-28
SPP15N60CFD
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
20
2
20 V
10 V
8V
1.8
1.6
15
1.4
R DS(on) [Ω]
I D [A]
7V
10
6.5 V
1.2
1
5V
6V
5.5 V
6.5 V
7V
10 V
0.8
20 V
6V
0.6
5.5 V
0.4
5V
0.2
5
0
0
0
5
10
15
20
0
2
4
V DS [V]
6
8
10
12
I D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=9.4 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
1
50
0.8
40
0.6
30
25 °C
I D [A]
R DS(on) [Ω]
parameter: T j
98 %
0.4
150 °C
20
typ
0.2
10
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.2
0
2
4
6
8
10
12
V GS [V]
page 6
2007-08-28
SPP15N60CFD
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=13.4 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
120 V
480 V
8
150 °C, 98%
25 °C
101
6
I F [A]
V GS [V]
150 °C
25 °C, 98%
4
100
2
10-1
0
0
20
40
60
0
80
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche SOA
12 Avalanche energy
I AR=f(t AR)
E AS=f(T j); I D=6.7 A; V DD=50 V
parameter: T j(start)
14
480
420
12
360
10
6
125 °C
E AS [mJ]
I AV [A]
300
8
25 °C
240
180
4
120
2
60
0
10-3
0
10-2
10-1
100
101
102
103
104
t AR [µs]
Rev. 1.2
25
75
125
175
T j [°C]
page 7
2007-08-28
SPP15N60CFD
13 Drain-source breakdown voltage
14 Typ. capacitances
V BR(DSS)=f(T j)
C =f(V DS); V GS=0 V; f =1 MHz
104
700
Ciss
103
C [pF]
V BR(DSS) [V]
660
620
102
Coss
Crss
580
101
540
100
-60
-20
20
60
100
140
0
180
100
T j [°C]
200
300
400
500
V DS [V]
15 Typ. C oss stored energy
16 Typ. reverse recovery charge
E oss= f(V DS)
Q rr=f(T j);parameter: I D =13.4 A
12
2
10
1.8
1.6
Q rr [µC]
E oss [µJ]
8
6
1.4
4
1.2
2
0
1
0
100
200
300
400
500
600
Rev. 1.2
25
50
75
100
125
T j [°C]
V DS [V]
page 8
2007-08-28
SPP15N60CFD
17 Typ. reverse recovery charge
18 Typ. reverse recovery charge
Q rr=f(I S); parameter: di/ dt =100 A/µs
Q rr=f(di /dt ); parameter: I D=13.4 A
2
3
1.8
125 °C
2.5
1.6
125 °C
1.4
2
Q rr [µC]
Q rr [µC]
1.2
1
25 °C
1.5
25 °C
0.8
1
0.6
0.4
0.5
0.2
0
0
3
5
7
9
11
13
Rev. 1.2
100
200
300
400
500
d i/d t [A/µs]
I S [A]
page 9
2007-08-28
SPP15N60CFD
Definition of diode switching characteristics
Rev. 1.2
page 10
2007-08-28
SPP15N60CFD
PG-TO-220-3--1; -3-21
Dimensions in mm/ inches
Rev. 1.2
page 11
2007-08-28
SPP15N60CFD
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologies
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 1.2
page 12
2007-08-28