NTZS3151P D

NTZS3151P
Small Signal MOSFET
−20 V, −950 mA, P−Channel SOT−563
Features
•
•
•
•
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) Typ
ID Max
120 mW @ −4.5 V
144 mW @ −2.5 V
−20 V
−950 mA
195 mW @ −1.8 V
Applications
• Load/Power Switches
• Battery Management
• Cell Phones, Digital Cameras, PDAs, Pagers, etc.
P−Channel MOSFET
D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Symbol
Parameter
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0
V
−860
mA
Continuous Drain Current
(Note 1)
Steady
State
Power Dissipation
(Note 1)
TA = 25°C
TA = 70°C
Steady State
Continuous Drain Current
(Note 1)
tv5s
Power Dissipation
(Note 1)
TA = 25°C
TA = 70°C
ID
PD
ID
−690
170
mW
−950
mA
−760
tv5s
PD
210
mW
tp = 10 ms
IDM
−4.0
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−360
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Pulsed Drain Current
Operating Junction and Storage Temperature
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
720
°C/W
Junction−to−Ambient – t v 5 s (Note 1)
RqJA
600
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in. sq. pad size
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 3
1
S
MARKING
DIAGRAM
6
1
SOT−563−6
CASE 463A
TX M G
G
TX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PINOUT: SOT−563
D 1
6 D
D 2
5 D
G
4 S
3
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
NTZS3151P/D
NTZS3151P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
−13
mV/°C
VGS = 0 V
TJ = 25°C
−1.0
VDS = −20 V
TJ = 125°C
−5.0
IGSS
VDS = 0 V, VGS = "8.0 V
VGS(TH)
VGS = VDS, ID = −250 mA
"100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
gFS
−1.0
2.4
VGS = −4.5 V, ID = −950 mA
RDS(on)
−0.45
V
mV/°C
120
150
mW
VGS = −4.5 V, ID = −770 mA
112
142
VGS = −2.5 V, ID = −670 mA
144
200
VGS = −1.8 V, ID = −200 mA
195
240
VDS = −10 V, ID = −810 mA
3.1
S
458
pF
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = −16 V
61
38
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.2
td(ON)
5.0
nC
5.6
VGS = −4.5 V, VDS = −10 V;
ID = −770 mA
0.6
0.9
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
tr
td(OFF)
Fall Time
VGS = −4.5 V, VDD = −10 V,
ID = −950 mA, RG = 6.0 W
tf
ns
12
23.7
18
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
VGS = 0 V,
IS = −360 mA
TJ = 25°C
−0.64
TJ = 125°C
−0.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −360 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
10.5
−0.9
V
ns
NTZS3151P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4
3.5
−1.8 V
VGS = −3 V
VGS = −2 V
3
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
4
TJ = 25°C
−1.6 V
2.5
2
−1.4 V
1.5
1
−1.2 V
0.5
−1 V
0
0.5
1
1.5
2.5
2
3
4
3.5
4.5
3
2.5
2
1.5
1
5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.2
TJ = 125°C
0.1
TJ = 25°C
TJ = −55°C
0
3
1
2
−ID, DRAIN CURRENT (AMPS)
0
4
0
0.3
3
TJ = 25°C
VGS = −1.8 V
0.2
VGS = −2.5 V
VGS = −4.5 V
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Drain Current and
Temperature
10000
ID = −0.95 A
VGS = −4.5 V
VGS = 0 V
TJ = 150°C
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
125°C
0.5
1
1.5
2
2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS = −4.5 V
1.6
25°C
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.3
1.8
TJ = −55°C
0.5
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
VDS ≥ −10 V
3.5
1.4
1.2
1
TJ = 125°C
1000
0.8
0.6
−50
−25
0
25
50
75
100
125
150
100
0
5
10
15
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTZS3151P
VDS = 0 V
C, CAPACITANCE (pF)
900
VGS = 0 V
TJ = 25°C
CRSS
800
700
600
CISS
500
400
300
200
COSS
100
0
10
5
0
−VGS −VDS
5
10
15
20
25
30
5
QT
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
25
4
−VGS
20
3
15
QGS
2
QGD
1
0
10
0
1
5
ID = −0.77 A
TJ = 25°C
−VDS
2
3
4
5
QG, TOTAL GATE CHARGE (nC)
6
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1.2
VDD = −25 V
ID = −0.95 A
VGS = −4.5 V
−IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
1000
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
td(off)
tf
tr
10
td(on)
1.0
0.8
0.6
0.4
0.2
1
1
10
VGS = 0 V
TJ = 25°C
0
0.1
100
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
Package
Shipping
NTZS3151PT1G
SOT−563
(Pb−Free)
4000 / Tape & Reel
NTZS3151PT1H
SOT−563
(Pb−Free)
4000 / Tape & Reel
NTZS3151PT5G
SOT−563
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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4
NTZS3151P
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
D
−X−
6
5
1
e
2
A
4
E
−Y−
3
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
HE
DIM
A
b
C
D
E
e
L
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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For additional information, please contact your local
Sales Representative
NTSZ3151P/D