TIG058E8 Flash IGBT Application Note

Xenon Flash Light
IGBT Application Note
Hyper Device Division
March. 2014
Agenda
1. Operating Precautions
2. Recommended Circuit Example
Agenda
1. Operating Precautions
2. Recommended Circuit Example
Operating Precautions
Please note the followings when you use the devices
because flash IGBTs handle high current.
Please evaluate the following points when designing.
a.
b.
c.
d.
ICP precautions
dv/dt precautions
dv/dt adjustments
Wiring precautions
a. ICP precautions
The ICP, collector current
peak is restricted by VGE,
gate-emitter voltage.
Please use the device within
the ICP-VGE safe operation
area described in each
product’s specification.
Please note that the ICP is
also restricted by the main
condenser capacity.
Operating waveform
Collector Current Peak
ICP
Gate Signal
Collector-Emitter Voltage
VCE
Collector Current
IC
Example: TIG058E8’s ASO
※Left chart shows the ASO
for single-shot pulse.
Considering heat generation,
please use the device with
channel temperature
Tch≦150℃ in continuous
operating
b. dv/dt precautions
Please use the device with 400V/μs or less of dv/dt , inclination of collectoremitter voltage in turn-off section. Using with dv/dt>400V/μs is not guaranteed.
Operating waveform
Expanded waveform in
Turn-off section
Gate Signal
⊿VCE
Collector-Emitter Voltage
VCE
⊿t=100ns
Collector Current
IC
Turn-off section
[Definition of dv/dt]
Max.⊿VCE/⊿t shall be
dv/dt in turn-off section.
c. dv/dt adjustments
Please adjust the gate series resistance RG to keep dv/dt to 400V/μs or less.
There is no restriction for Rg.
Though the dv/dt-Rg dependency differs according to the mount conditions,
for your reference, we provide the dv/dt-Rg dependency graphs in each
product’s specification.
Example:TIG058E8’s dv/dt-Rg dependency graph
d. Wiring precautions
If the wiring resistance between IGBT’s emitter terminal and GND is high,
there will be rise in emitter terminal potential and lack in actual gate voltage
during high current operation.
This may cause the breakdown of IGBT.
Flash Unit Application Circuit
VCC
Gate Voltage during high
current operation will be:
VGE - IC×RE
Xe
TC
IC
CM
+
IGBT
GND
VDD
Wiring resistance
RE
gate series resistance
Rg
VGE
GND
Agenda
1. Operating Precautions
2. Recommended Circuit Example
Recommended Circuit Example
VCC
①High current
path should be
thick and short
Xe
TC
IC
CM
VDD
+
IG
②Keep low impedance
between IGBT-GND
(3mΩ or less is
recommended)
gate series resistance
Rg
IGBT
GND
VGE
GND
③Place IGBT &
driver near by
VCC
Xe
TC
Recommended Circuit
CM
VDD
+
gate series resistance
Rg
IGBT
GND
GND