Si4862DY Datasheet

Si4862DY
Vishay Siliconix
N-Channel 16-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
16
RDS(on) (Ω)
ID (A)
0.0033 at VGS = 4.5 V
25
0.0055 at VGS = 2.5 V
20
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETs: 2.5 V Rated
• Low 3.3 mΩ RDS(on)
• Low Gate Resistance
• 100 % Rg Tested
APPLICATIONS
• Synchronous Rectification
• Low Output Voltage Synchronous Rectification
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
5
D
G
4
G
Top View
S
Ordering Information: Si4862DY-T1-E3 (Lead (Pb)-free)
Si4862DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
16
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
25
17
13
60
2.9
1.3
3.5
1.6
2.2
1
TJ, Tstg
Operating Junction and Storage Temperature Range
V
20
IDM
Pulsed Drain Current (10 µs Pulse Width)
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
29
35
67
80
13
16
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71439
S09-0221-Rev. C, 09-Feb-09
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1
Si4862DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
0.6
Typ.
Max.
Unit
± 100
nA
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
VDS = 12.8 V, VGS = 0 V
1
VDS = 12.8 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 4.5 V
RDS(on)
Forward Transconductancea
a
V
µA
30
A
VGS = 4.5 V, ID = 25 A
0.0027
0.0033
VGS = 2.5 V, ID = 20 A
0.0045
0.0055
gfs
VDS = 6 V, ID = 25 A
140
VSD
IS = 2.9 A, VGS = 0 V
0.75
1.1
48
70
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = 6 V, VGS = 4.5 V, ID = 25 A
8.9
0.5
1.3
td(on)
Turn-On Delay Time
VDD = 6 V, RL = 6 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
11.8
IF = 2.9 A, dI/dt = 100 A/µs
Ω
2.2
42
60
38
60
120
180
50
75
80
120
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
60
VGS = 5 V thru 2.5 V
50
I D - Drain Current (A)
I D - Drain Current (A)
50
40
30
2V
20
40
30
TC = 125 °C
20
25 °C
10
10
- 55 °C
0
0
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2
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
Document Number: 71439
S09-0221-Rev. C, 09-Feb-09
Si4862DY
Vishay Siliconix
0.010
10 000
0.008
8000
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS = 2.5 V
0.006
0.004
VGS = 4.5 V
Ciss
6000
4000
Coss
2000
0.002
Crss
0
0.000
0
10
20
30
40
50
0
60
9
12
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
15
1.6
VDS = 6 V
ID = 25 A
VGS = 4.5 V
ID = 25 A
1.4
4
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
6
On-Resistance vs. Drain Current
5
3
2
1.2
1.0
0.8
1
0.6
- 50
0
0
12
24
36
48
60
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.015
60
R DS(on) - On-Resistance (Ω)
TJ = 150 °C
I S - Source Current (A)
3
10
TJ = 25 °C
0.012
0.009
0.006
ID = 25 A
0.003
0.000
1
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71439
S09-0221-Rev. C, 09-Feb-09
1.2
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si4862DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
60
50
0.2
0.0
40
Power (W)
VGS(th) Variance (V)
ID = 250 µA
- 0.2
30
- 0.4
20
- 0.6
10
- 0.8
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0
10 - 2
10 - 1
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = RthJA = 67 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 - 4
t1
t2
10 - 3
10 - 2
4. Surface Mounted
10 - 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71439.
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Document Number: 71439
S09-0221-Rev. C, 09-Feb-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000