IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 100 Qgs (nC) 17 Qgd (nC) 44 Configuration Single D Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fully Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION TO-247 Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that these Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. G S D G S N-Channel MOSFET ORDERING INFORMATION Package TO-247 IRFP254NPbF SiHFP254N-E3 IRFP254N SiHFP254N Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT VDS VGS 250 ± 20 23 16 92 1.5 300 14 22 220 7.4 - 55 to + 175 300d 10 1.1 Drain-Source Voltage Gate-Source Voltage VGS at 10 V Continuous Drain Current TC = 25 °C TC = 100 °C ID Currenta Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque IDM TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 3.1 mH, RG = 25 Ω, IAS = 14 A, VGS = 10 V. c. ISD ≤ 14 A, dI/dt ≤ 460 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91213 S-Pending-Rev. A, 24-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRFP254N, SiHFP254N Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.68 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 µA 250 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.33 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V - - 25 VDS = 200 V, VGS = 0 V, TJ = 150 °C - - 250 - - 0.125 Ω VDS = 25 V, ID = 14 A 15 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 2040 - - 260 - - 62 - - - 100 - - 17 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 14 Ab VGS = 10 V µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) ID = 14 A, VDS = 200 V, see fig. 6 and 13b VGS = 10 V VDD = 125 V, ID = 14 A, RG = 3.6 Ω, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC - - 44 - 14 - - 34 - - 37 - - 29 - - 5.0 - - 13 - - - 23 - - 92 - - 1.3 - 210 310 ns - 1.7 2.6 nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 14 A, VGS = 0 Vb TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91213 S-Pending-Rev. A, 24-Jun-08 IRFP254N, SiHFP254N Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ID, Drain-to-Source Current (A) Top 10 Bottom 100 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V ID, Drain-to-Source Current (A) 100 4.5 V 1 20 µs PULSE WIDTH TJ = 25 °C 100 10 1 VDS, Drain-to-Source Voltage (V) 0.1 0.1 TJ = 175 °C 10 TJ = 25 °C 1 4.0 100 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V ID, Drain-to-Source Current (A) Top 10 4.5 V 20 µs PULSE WIDTH TJ = 175 °C 1 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91213 S-Pending-Rev. A, 24-Jun-08 5.0 6.0 8.0 7.0 VGS, Gate-to-Source Voltage (V) 9.0 Fig. 3 - Typical Transfer Characteristics 100 rDS(on), Drain-to-Source On Resistance (Normalized) Fig. 1 - Typical Output Characteristics VDS = 50 V 20 µs PULSE WIDTH 4.0 ID = 23 A 3.0 2.0 1.0 VGS = 10 V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFP254N, SiHFP254N Vishay Siliconix 4000 C, Capacitance (pF) 3000 Ciss 2000 Coss 1000 100 f = 1 MHz SHORTED ISD, Reverse Drain Current (A) VGS = 0 V, Ciss = Cgs + Cgd, Cds Crss = Cgd Coss = Cds + Cgd Crss 0 1 10 10 1 TJ = 25 °C VGS = 0 V 0.1 1000 100 TJ = 175 °C 0.2 1.2 VDS, Drain-to-Source Voltage (V) 0.8 0.4 1.0 0.6 VSD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 1000 VDS = 200 V VDS = 125 V VDS = 50 V 16 OPERATING IN THIS AREA LIMITED BY RDS(on) 100 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) ID = 14 A 12 8 10 100 µs 1 ms 1 4 For Test Circuit See Fig. 13 0 0 20 40 60 80 0.1 100 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 10 ms TC = 25 °C TJ = 175 °C Single Pulse 1 10 100 1000 10000 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91213 S-Pending-Rev. A, 24-Jun-08 IRFP254N, SiHFP254N Vishay Siliconix RD 25 VDS VGS ID, Drain Current (A) 20 D.U.T. RG + - VDD VGS 15 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 10 Fig. 10a - Switching Time Test Circuit VDS 5 90 % 0 25 75 50 100 125 150 175 10 % VGS TC, Case Temperature (°C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 0.02 0.01 0.01 0.00001 t1 (THERMAL RESPONSE) 0.0001 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91213 S-Pending-Rev. A, 24-Jun-08 www.vishay.com 5 IRFP254N, SiHFP254N Vishay Siliconix VDS 15 V tp Driver L VDS D.U.T. RG + A - VDD IAS VGS tp A IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 600 ID 5.6 A 9.8 A 14 A EAS, Single Pulse Avalanche Energy (mJ) TOP 500 BOTTOM 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Document Number: 91213 S-Pending-Rev. A, 24-Jun-08 IRFP254N, SiHFP254N Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Body diode VDD forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices and 3 V drive devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91213. Document Number: 91213 S-Pending-Rev. A, 24-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1