Si3483DV Datasheet

Si3483DV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (Ω)
ID (A)
0.035 at VGS = - 10 V
- 6.2
0.053 at VGS = - 4.5 V
- 5.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
TSOP-6
Top View
3 mm
1
6
2
5
3
4
(4) S
(3) G
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3483DV-T1-E3 (Lead (Pb)-free)
Si3483DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
- 4.7
- 4.9
- 3.7
- 25
- 1.7
- 0.95
2.0
1.14
1.3
0.73
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 6.2
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
45
62.5
90
110
25
30
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72078
S09-2276-Rev. C, 02-Nov-09
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1
Si3483DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 1.0
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
a
V
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 85 °C
-5
VDS ≤ - 5 V, VGS = - 10 V
RDS(on)
Forward Transconductancea
-3
± 100
µA
- 25
A
VGS = - 10 V, ID = - 6.2 A
0.028
0.035
VGS = - 4.5 V, ID = - 5.0 A
0.042
0.053
gfs
VDS = - 15 V, ID = - 6.2A
14
VSD
IS = - 1.7 A, VGS = 0 V
- 0.8
- 1.2
23
35
VDS = - 15 V, VGS = - 10 V, ID = - 6.2 A
3.6
Ω
S
V
b
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
6
IF = - 1.7 A, dI/dt = 100 A/µs
10
15
10
15
71
110
45
70
45
70
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
25
4V
VGS = 10 V thru 5 V
20
I D - Drain Current (A)
I D - Drain Current (A)
20
15
10
3V
5
15
10
5
TC = 125 °C
25 °C
- 55 °C
0
0
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2
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.5
4.0
Document Number: 72078
S09-2276-Rev. C, 02-Nov-09
Si3483DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.10
1600
1200
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1400
0.08
0.06
VGS = 4.5 V
0.04
VGS = 10 V
Ciss
1000
800
600
Coss
400
0.02
Crss
200
0.00
0
0
5
10
15
20
25
0
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.6
VGS = 10 V
ID = 6.2 A
VDS = 15 V
ID = 6.2 A
1.4
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
On-Resistance vs. Drain Current
10
6
4
1.2
1.0
0.8
2
0.6
- 50
0
0
5
10
15
20
25
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
30
150
0.10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
6
TJ = 150 °C
10
TJ = 25 °C
0.08
ID = 2 A
ID = 6.2 A
0.06
0.04
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72078
S09-2276-Rev. C, 02-Nov-09
10
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Si3483DV
Vishay Siliconix
0.6
50
0.4
40
ID = 250 µA
0.2
Power (W)
VGS(th) Variance (V)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.0
- 0.2
30
20
10
- 0.4
- 50
- 25
0
25
50
75
100
125
0
10 - 3
150
10 - 2
10 - 1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
100
Limited by RDS(on)*
IDM Limited
P(t) = 0.0001
I D - Drain Current (A)
10
P(t) = 0.001
1
ID(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
TA = 25 °C
Single Pulse
P(t) = 1
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72078
S09-2276-Rev. C, 02-Nov-09
Si3483DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72078.
Document Number: 72078
S09-2276-Rev. C, 02-Nov-09
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Revision: 02-Oct-12
1
Document Number: 91000